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    DIODE E 2060 Search Results

    DIODE E 2060 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE E 2060 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXXN110N65C4H1

    Abstract: E8 55A DIODE ixxn110n65c z 683
    Text: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings


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    20-60kHz IXXN110N65C4H1 IC110 OT-227B, E153432 IF110 50/60Hz 100N65C4H1 IXXN110N65C4H1 E8 55A DIODE ixxn110n65c z 683 PDF

    Untitled

    Abstract: No abstract text available
    Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


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    IXXN110N65C4H1 20-60kHz IC110 OT-227B, E153432 IF110 110N65C4 1-30-13-A PDF

    SOT-227B

    Abstract: ixxn200n60 ixxn200n60c3h1 DS100511
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C


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    20-60kHz IXXN200N60C3H1 IC110 OT-227B E153432 IF110 50/60Hz 200N60C3 1-05-12-A SOT-227B ixxn200n60 ixxn200n60c3h1 DS100511 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C


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    IXXN200N60C3H1 IC110 20-60kHz OT-227B E153432 IF110 200N60C3 1-05-12-A PDF

    TDA8808AT

    Abstract: 808T S028 TDA8808 TDA8808T LDT1 TA72 GCLF A2-255 lbgc
    Text: TDA8808T TDA8808AT PHOTO DIODE SIGNAL PROCESSOR FOR COMPACT DISC PLAYERS G E N E R A L D E S C R IP T IO N The TD A 8808 is a bipolar integrated circuit designed for use in compact disc players with a single spot read-out system. It amplifies the photo-diode signals and processes the error signals for the


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    TDA8808T TDA8808AT TDA8808 TDA8808T A8808AT 7110fl2b TDA8808AT 808T S028 LDT1 TA72 GCLF A2-255 lbgc PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    diode lt 436

    Abstract: IRKT THYRISTOR THYRISTOR MODULE THYRISTOR 30A 300V L1385 irkt 350
    Text: International I S Rectifier s e r ie s i r k .f h 2 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features • ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage


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    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    mj 1504 transistor

    Abstract: transistor mj 1504 2N5862 MJ 5030 transistor b 1560 mj 1504 2N5680 2N5867 2N4902 2N4903
    Text: ~2~B48352 DIODE TE~£WgISTOR CO INC PNPTO-3 A4 84D D E|EflM fl3SE 0 0 135 D D D D 1 3S D T - fl ¥ ~ DIODE TPi4f\ 515TDR CO. INC. 201) 666-0400 « Telex: 139485 • Outside N Y & NJ area ca ll TO LL FREE 800-526-4581 F A X No. 201*575*5863 Type* NPN Com pJe- VCtO(SUS)


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    B48352 TMI\I515T0R TC-25Â 2N4901 2N5067 1ffl40 2N4902 2N5068 2N4903 2N5069 mj 1504 transistor transistor mj 1504 2N5862 MJ 5030 transistor b 1560 mj 1504 2N5680 2N5867 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    Untitled

    Abstract: No abstract text available
    Text: I . I Bulletin 127091 rev.A 09/97 In te rn a tio n a l i r k . f i 1 2 . s e r i e s i q r Rectifier FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 112 A • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e


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    2N1100

    Abstract: transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555
    Text: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s


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    DDDD141 2N58A 2N1073 2N2158 2N5325 2N143/13 2N1073A 2N2158A 2N5435 2N174A 2N1100 transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555 PDF

    2N2067

    Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042
    Text: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581


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    2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 MT-28 MT-28 2N2067 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A PDF

    2n3215

    Abstract: TO13 MT28 diode e 2060 2n2284 2N1042 2N1043 2N1044 2N1045 2N2556
    Text: DI O D E T R A N S I S T O R CO INC ~flM DE Ja àMfl35E D Q D O i n 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581


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    2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 MT-28 MT-28 2n3215 TO13 MT28 diode e 2060 2n2284 2N1044 2N1045 2N2556 PDF

    TIC 2060 D

    Abstract: TIC 2060 T5100-M diode AR s1 61 MT20 low leakage diodes
    Text: / MicrokemiCorp. ? The diode experts - - j SANTA ANA, CA SCOTTSDALE, AZ j For more information call: 714 979-8220 MT5100-MT5103 MT5139,MT5140, MT2060, MT2060A MT2061, MT2061A - - — _ _ _ / FE A T U R E S PICO AMP LOW LEAKAGE DIODES • Exhibits leakage currents approaching the theoretical bulk


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    MT5100-MT5103 MT5139 MT5140, MT2060, MT2060A MT2061, MT2061A T5100-M T5103 MT5139, TIC 2060 D TIC 2060 diode AR s1 61 MT20 low leakage diodes PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    OC26 transistor

    Abstract: 2N301 2n1303 OC28 2N388A 2N1010 2N1304 2n1304 transistor OC36 transistor AUY29
    Text: 0DQD14E S I T 3 3 -0 e! DIODE TRANSISTOR CQ.1 \IC. GERMANIUM NPN LOW POWER TRANSISTORS DEVICES PKG (201 686-0400 • Tb Ioxl 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561 hAA FAX NO. No. 2U1-S7!>-58e3 201*575*5863 _ 2N35 2N78 2N94 2N97 2N98


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    TbIoxl139-385 2N103 2N124 2N125 2N212 2N213 2N214 2N228 2N229 2N333 OC26 transistor 2N301 2n1303 OC28 2N388A 2N1010 2N1304 2n1304 transistor OC36 transistor AUY29 PDF

    OC26 transistor

    Abstract: 2N301 OC30 OC26 2n2430 OC36 transistor 2N1010 OC25 germanium transistors NPN t01 transistor
    Text: 0DQD14E S I T 3 3 -0 e! DIODE TRANSISTOR CQ.1 \IC. GERMANIUM NPN LOW POWER TRANSISTORS DEVICES PKG (201 686-0400 • Tb Ioxl 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561 hAA FAX NO. No. 2U1-S7!>-58e3 201*575*5863 _ 2N35 2N78 2N94 2N97 2N98


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    TbIoxl139-385 2N103 2N124 2N125 2N212 2N213 2N214 2N228 2N229 2N333 OC26 transistor 2N301 OC30 OC26 2n2430 OC36 transistor 2N1010 OC25 germanium transistors NPN t01 transistor PDF

    IVST5139

    Abstract: MT2060 MT2060A MT2061 MT2061A MT5139 MT5140 low leakage pico amp diode
    Text: MT5100-MT5103 MT5139,MT5140, MT2060, MT2060A MT2061, MT2061A / Microsemi Corp. fi íh p diode expens I SANTA ANA, CA F o r m o r e in f o r m a t i o n c a ll: 714 979-8220 FEATURES PICO AMP LOW LEAKAGE DIODES • Exhibits leakage currents approaching the theoretical bulk


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    MT5100-MT5103 IVST5139, MT5140, MT2060, MT2060A MT2061, MT2061A MIL-S-19500 MT5139, IVST5139 MT2060 MT2061 MT2061A MT5139 MT5140 low leakage pico amp diode PDF

    BH45-704A

    Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
    Text: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m ­ m en d ed m ax (V) ■d on re­ sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se


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    345b503 T-230\ CB-356 C8-350 345b2D3 CB-349 CB-350 BH45-704A BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATU RES MODEL NO. DS0612 A vi? • 2 0 -2 0 0 0 MHz ■ Low Cost ■ TTL Driver ■ PIN Diode SP2T Non-Reflective SP2T ■ 14 Pin DIP “O” CONTROL GND 14 13 RF1 GND GND 12 RF COM GND 11 10 N/C +5V 8 .20 .22 r 14 P L A C E S GND RF 2 N/C = NO INTERNAL CONNECTION


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    DS0612 PDF

    ALY TRANSISTOR

    Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


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    O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 ALY TRANSISTOR 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY PDF