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    DIODE C05 Search Results

    DIODE C05 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE C05 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DIN 16901 130

    Abstract: SQH5
    Text: Technische Information / technical information FS300R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    FS300R12KE3 DIN 16901 130 SQH5 PDF

    25B22

    Abstract: FS150R12KE3G DIN 16901 130 cn7a
    Text: Technische Information / technical information FS150R12KE3G IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    FS150R12KE3G 25B22 FS150R12KE3G DIN 16901 130 cn7a PDF

    FS450R12KE3

    Abstract: No abstract text available
    Text: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    FS450R12KE3 FS450R12KE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ300R12KE3G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    FZ300R12KE3G PDF

    FZ300R12KE3G

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ300R12KE3G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    FZ300R12KE3G FZ300R12KE3G PDF

    FZ300R12KE3B1G

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ300R12KE3B1G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    FZ300R12KE3B1G FZ300R12KE3B1G PDF

    FZ300R12KE3B1G

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ300R12KE3B1G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    FZ300R12KE3B1G FZ300R12KE3B1G PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ1500R33HE3 IGBT-Module IGBT-modules IHM-B Modul mit schnellem Trench/Feldstop-IGBT3 und Emcon3 Diode IHM-B module with fast trench/fieldstop-IGBT3 and Emcon3 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data


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    FZ1500R33HE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ300R12KE3B1G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    FZ300R12KE3B1G PDF

    FZ300R12KE3G

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ300R12KE3G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    FZ300R12KE3G FZ300R12KE3G PDF

    BSM400GA120DLC

    Abstract: 6c01
    Text: Technische Information / technical information BSM400GA120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM400GA120DLC BSM400GA120DLC 6c01 PDF

    2NU diode

    Abstract: LTC4098-3.6 DIODE C06-15
    Text: Technische Information / technical information IGBT-Module IGBT-modules BSM400GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM400GA120DLC 36134B6 61FA3265 2NU diode LTC4098-3.6 DIODE C06-15 PDF

    22J 160

    Abstract: No abstract text available
    Text: Technische Information / technical information BSM400GA120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM400GA120DLC 22J 160 PDF

    sot-23 MARKING CODE 21

    Abstract: CMPSH05-4
    Text: Central CMPSH05-4 SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH05-4 is a HIGH CURRENT, LOW VF 40 volt Schottky Diode packaged in a space saving SOT-23 surface mount case. This device has been


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    CMPSH05-4 CMPSH05-4 OT-23 100mA 500mA 13-September sot-23 MARKING CODE 21 PDF

    BC352* CSR

    Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index


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    MPS5142 MPS5143 2N998 2N3677 2N2411 2N1991 PN5143 2N5143 2N2802 2N2803 BC352* CSR csr BC352 2N936 Emihus 2N828 Bc352 LOW-POWER SILICON PNP 2N850 transitron PDF

    Diode SOT-23 marking 27

    Abstract: sot-23 MARKING CODE 21 CMPSH05-4 schottky diode low vf C054
    Text: CMPSH05-4 SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH05-4 is a HIGH CURRENT, LOW VF 40 volt Schottky Diode packaged in a space saving SOT-23 surface mount case. This device has been designed for small signal


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    CMPSH05-4 CMPSH05-4 OT-23 100mA 500mA 27-January Diode SOT-23 marking 27 sot-23 MARKING CODE 21 schottky diode low vf C054 PDF

    ERC05

    Abstract: No abstract text available
    Text: ERC05 1.2A (600V to 800V / 1.2A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 4.0 ø 0.8 7.5 28 MIN. 28 MIN. Features Marking High surge current High reliability Color code : Orange C05 Abridged type name Applications 種 機 Absolute maximum ratings


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    ERC05 ERC05 PDF

    c05 10 diode

    Abstract: general purpose diode marking code -06 "RECTIFIER DIODE" 12A MARKING CODE
    Text: ERC05 1.2A (600V to 800V / 1.2A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 4.0 ø 0.8 7.5 28 MIN. 28 MIN. Features Marking High surge current High reliability Color code : Orange C05 Abridged type name Applications Cathode mark 08 Voltage class


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    ERC05 ERC05 c05 10 diode general purpose diode marking code -06 "RECTIFIER DIODE" 12A MARKING CODE PDF

    c05 10 07 diode

    Abstract: No abstract text available
    Text: ERC05 1.2A (600V to 800V / 1.2A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 4.0 ø 0.8 7.5 28 MIN. 28 MIN. Features Marking High surge current High reliability Color code : Orange C05 Abridged type name Applications 08 Voltage class General purpose rectifier applications


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    ERC05 ERC05 c05 10 07 diode PDF

    TLP590

    Abstract: No abstract text available
    Text: i GaAs IRED & PHOTO-DIODE ARRAY TELECOMMUNICATION TLP590 TENTATIVE DATA PROGRAMMABLE CONTROLLERS. MOS GATE DRIVER MOS FET GATE DRIVER The TOSHIBA TLP590 consists of a galium arsenide infrared emitting diode optically coupled to a series connected photo-diode array in a six lead plastic DIP


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    TLP590 TLP590 PDF

    laser diode lg

    Abstract: transmitter tube 807 LG1625AXF TF1006A
    Text: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide {GaAs laser diode driver to be used with direct modulated laser


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    LG1625AXF DS99-187HSPL U7732 laser diode lg transmitter tube 807 TF1006A PDF

    N41 1600

    Abstract: CC41C
    Text: POWEREX CD41, CC41, CN41 Powerex, Inc., 2 0 0 H illis S treet, Youngwood, P en n sylvan ia 15697-180 0 4 1 2 92 5-7 2 7 2 Dual Diode POW-R-BLOK Module 55 Amperes/1200 Volts Description: Powerex Dual Diode Modules are designed for use in applications


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    Amperes/1200 Amperes/1600 N41 1600 CC41C PDF

    BUK637-500B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL fc.SE D B 7110fl2fc, DDfci43Dfci OMR • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode


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    711002b D0b43Db BUK637-500B BUK637-500B PDF

    TLP296G

    Abstract: Scans-00923
    Text: TOSHIBA TLP296G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP296G TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP296G consists of gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a 8 lead DIP package DIP8 .


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    TLP296G TLP296G 11-10C4 Scans-00923 PDF