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    FZ1500R33HE3 Search Results

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    FZ1500R33HE3 Price and Stock

    Rochester Electronics LLC FZ1500R33HE3BPSA1

    FZ1500R33 - INSULATED GATE BIPOL
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    DigiKey FZ1500R33HE3BPSA1 Bulk 1
    • 1 $2073.06
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    Infineon Technologies AG FZ1500R33HE3BPSA1

    IGBT MODULE 3300V 1500A
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    DigiKey FZ1500R33HE3BPSA1 Tray 1
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    Verical FZ1500R33HE3BPSA1 66 1
    • 1 $2491.6625
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    FZ1500R33HE3BPSA1 3 1
    • 1 $2491.6625
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    Rochester Electronics FZ1500R33HE3BPSA1 69 1
    • 1 $1993.33
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    • 100 $1873.73
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    Infineon Technologies AG FZ1500R33HE3S6BOSA1

    IHV IHM T XHP 3 3-6 5K AG-IHVB19
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    DigiKey FZ1500R33HE3S6BOSA1 Tray 1
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    Mouser Electronics FZ1500R33HE3S6BOSA1
    • 1 $1950.31
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    Infineon Technologies AG FZ1500R33HE3C1BPSA1

    IHV IHM T XHP 3 3-6 5K AG-IHVB19
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    DigiKey FZ1500R33HE3C1BPSA1 Tray 1
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    Infineon Technologies AG FZ1500R33HE3C1NPSA1

    IHV IHM T XHP 3 3-6 5K
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    FZ1500R33HE3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FZ1500R33HE3 Infineon Technologies IGBT Modules up to 3300V Single; Package: AG-IHVB190-1; IC (max): 1,500.0 A; VCE(sat) (typ): 2.55 V; Configuration: Single Modules; Technology: IGBT3 Fast; Housing: IHV B 190 mm; Original PDF
    FZ1500R33HE3BPSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - MODULE IGBT IHVB190-3 Original PDF
    FZ1500R33HE3C1NPSA1 Infineon Technologies IHV IHM T XHP 3 3-6 5K Original PDF

    FZ1500R33HE3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ1500R33HE3 IGBT-Module IGBT-modules IHM-B Modul mit schnellem Trench/Feldstop-IGBT3 und Emcon3 Diode IHM-B module with fast trench/fieldstop-IGBT3 and Emcon3 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data


    Original     		PDF FZ1500R33HE3

    FZ1500R33HE3

    Abstract: C763
    Text: Technische Information / technical information FZ1500R33HE3 IGBT-Module IGBT-modules IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 Diode %&' ## % *& +,- ) ./ 0


    Original     		PDF FZ1500R33HE3 FZ1500R33HE3 C763

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1500R33HE3 VCES = 3300V IC nom = 1500A / ICRM = 3000A


    Original     		PDF FZ1500R33HE3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1500R33HE3 VCES = 3300V IC nom = 1500A / ICRM = 3000A


    Original     		PDF FZ1500R33HE3

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ1500R33HE3 IGBT-Module IGBT-modules IHM-B Modul mit schnellem Trench/Feldstop-IGBT3 und Emcon3 Diode IHM-B module with fast trench/fieldstop-IGBT3 and Emcon3 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data


    Original     		PDF FZ1500R33HE3

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original     		PDF

    FZ1200R33KF2C

    Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
    Text: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany


    Original     		PDF D-59581 D-85579 06K/kW FZ1500R33HE3 FZ1500R33HL3 FZ1200R33KF2C FZ1500R33HE3 FZ1200R33KF2C igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation

    HP STEP RECOVERY DIODES

    Abstract: cibh-diode fz1500r33he3 A-9500 igbt module 1500A A9500 IGBT3 infineon HIGH VOLTAGE DIODE 3.3kv 3.3kv diode Biermann
    Text: CIBH Diode with Superior Soft Switching Behavior in 3.3kV Modules for Fast Switching Applications Jürgen Biermann, Infineon Technologies AG, Max-Planck-Strasse 5, D-59581 Warstein, Germany Manfred Pfaffenlehner, Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany


    Original     		PDF D-59581 D-85579 HP STEP RECOVERY DIODES cibh-diode fz1500r33he3 A-9500 igbt module 1500A A9500 IGBT3 infineon HIGH VOLTAGE DIODE 3.3kv 3.3kv diode Biermann