FZ1200R33KF2C Search Results

FZ1200R33KF2C

Abstract: HGAR MC54 tu00t
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R33KF2C IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage

78A5A

Abstract: FZ1200R33KF2C MC54
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01

FZ1200R33KF2C

Abstract: MC54
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01

fz1200r33kf2c-b5

Abstract: tk 69 FZ1200R33KF2C uv1800 k4369
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C_B5 Gehäuse vom 6,5kV Modul housing from 6,5kV Module Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ1200R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& % %' $ 2 % %2 8 $ ? ? ' 9 * + !,()* + %!,- ./01

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

FZ1200R33KF2C

Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
Contextual Info: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany

DD1200S33K2C

Abstract: FZ1200R33KF2C BC 2500 ZL 8
Contextual Info: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ &' *+ &' ( )*+ % / /+ $ % 4(! 6 17 ,- ( 9 ,8 4 ( ! 8 &' ( ! )*+ &' ( ! )*+ < ,-.

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1200S33K2C 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C 连续正向直流电流

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules DD1200S33K2C 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C 连续正向直流电流

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

HIGH VOLTAGE DIODE 3.3kv

Abstract: 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv
Contextual Info: New 3300V High Power Emcon-HDR Diode with High Dynamic Robustness J. Biermann1 , K.-H. Hoppe1), O. Schilling1), J.G. Bauer2), A. Mauder2), E. Falck2), H.-J. Schulze2), H. Rüthing2), G. Achatz3) 1 2 eupec GmbH, Max-Planck-Straße, D-59581 Warstein, Germany

EN61140

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1200S33K2C Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C Tvj = -25°C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F361F3D132214DDDC 2313FF36134%62332364C3 &'6 6 *+ &'6(6 )*+

Contextual Info: Technische Information / technical information DD1200S33K2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # %& ' * %& ' ()* $ / /* # $ 4'! 6 17 +, ' 9 +8 4 ' !

FZ1200R33KF2C

Abstract: igbt eupec eupec igbt 3.3kv 3.3kv diode FZ1200R33KF2 Emcon igbt 3.3kv FZ1200r
Contextual Info: MARKETING NEWS Date:2003-03-07 Page 1 of 2 MN-Number: MN2003-03 Introduction of the new 3.3kV EmCon-HDR Diode Due to new perceptions of eupec and Infineon in simulation and design, the lateral device structure of 3.3kV diodes could be improved. Thus we are able to expand the safe operation area SOA of the 3.3kV