DIODE byv10-20
Abstract: BYV10 BYV1020 JTP 55 diode BYV10-20 U-28
Text: N AMER PHILIPS/ DIS CRETE b'IE D • bbSa^ai GG E b b M 1! bfc>4 HIAPX BYV10 J l SCHOTTKY BARRIER DIODE Schottky barrier diode w ith an integrated p-n junction protection ring in a SOD81 glass envelope and intended fo r use in low output voltage, low-power switch-mode power supplies and, in general, in
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BYV10
BYV10-20
BYV10-20
DIODE byv10-20
BYV10
BYV1020
JTP 55 diode
U-28
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BUZ54A
Abstract: t03 package transistor pin dimensions T-39-13 transistor BUZ54 IEC134 T3913 C413N 4-10N
Text: N AMER PHI LI PS /D IS CR ET E übE D P o w e r M O S transistor " • ^53=131 0014724 S B U Z 54A T - 2 ^ -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies
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BUZ54A
7Z63885
bbS3T31
0D14751
T-39-13
BUZ54A
t03 package transistor pin dimensions
T-39-13
transistor
BUZ54
IEC134
T3913
C413N
4-10N
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E11FS3
Abstract: E11FS4
Text: FAST RECOVERY DIODE l .l A /3 0 0 ~ 4 0 0 V /t r r : 30nsec E11FS3 E11FS4 « Similar to TO-243AB SOT-89 Case 1.8(.071) 1.41.055) o Surface Mount Device 2.61102) 2.4C094) I I 4.251167) — ± 3.75C.147) ° Ultra - Fast Recovery L ° Low Forward Voltage Drop
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lA/300
00V/trr
30nsec
E11FS3
E11FS4
O-243AB
OT-89)
0631MAX
E11FS3
E11FS4
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IRLIZ44G
Abstract: No abstract text available
Text: PRELIMINARY SFL044J DEVICES, INC in _ X _ 30 AMP 60 VOLT 0.030 Q N-CHANNEL LOGIC LEVEL POWER MOSFET 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 Designer’s Data Sheet FEATURES:
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670-SSDI
IRLIZ44G
O-257
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Untitled
Abstract: No abstract text available
Text: SILICON RECTIFIER DIODE 1IESI 11ES2 11ES4 “ g i a /100~800 v FEATURES 2.7 .106 ° Miniature Size M AX DIA 0 Low Forward Voltage Drop ° Low Reverse Leakage Current 0.60(.024)DIAa 0.54C021) .27(1.06) ° High Surge Capability MIN ° 26mm and 52mm Inside Tape Spacing
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11ES2
11ES4
54C021)
11ES1
11ES6
11ES1
11ES2
11ES8
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e10s
Abstract: M1043 E10QS03 Schottky Diode SOT-89 E10QS04 Schottky Barrier Diode SOT-89
Text: SCHOTTKY BARRIER DIODE i.ia /30~40v eioqso 3 eioqso 4 FEATURES ° Similar to TO-243AB SOT-89 Case ° Surface Mount Device ° Low Forward Voltage Drop “ Low Power Loss, High Efficiency ° High Surge Capability “ 30 Volts through 100 Volts Types Available
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ia/30
O-243AB
OT-89)
0631MAX
E10QS03
E10QS04
15X15mm)
e10s
M1043
E10QS03
Schottky Diode SOT-89
E10QS04
Schottky Barrier Diode SOT-89
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40 hmr 120 DIODE
Abstract: F10KF20B 25 HMR 120 A power diode
Text: r i o T n rn n iirn v m n n r FAST RECOVERY DIODE i i A / m n onm# /& oc H A /1 0 0 ~ 2 0 0 V /trr:3 5 n s e c 10KF1Û F10KF10 10KF20 F10KF20 iqKFIOB F10KF10B 10KF20B F10KF20B FEATURES ° Similar to TO-220AC and TO-220AB Case ° Fully Molded Isolation Case F - Type
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10KF1Ã
F10KF10
10KF20
F10KF20
F10KF10B
10KF20B
F10KF20B
O-220AC
O-220AB
10KF10
40 hmr 120 DIODE
F10KF20B
25 HMR 120 A power diode
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bfc,S3^31 0014366 1 ■ BUZ11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ11
BUZ11_
00143TE
T-39-11
bbS3T31
I-39-11
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DFD05T
Abstract: DFD05TB DFD05TC DFD05TE DFD05TG DFD05TJ DFD05TL DFD05TN DFD05TR
Text: Ordering number : EN2373 D F D 05T f No. 2373 SAm o Diffused Junction Type Silicon Diode i 0.5A Power Rectifier Features • . High-speed switching use . Plastic molded structure . Reverse recovery time trr=0.15us max B,C,E,G trr=0.3us max (J,L,N,R,T) . Peak reverse voltage V j ^ - 1 0 0 to -1700V
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EN2373
DFD05T
-1700V
DFD05TB
DFD05TC
DFD05TE
DFD05TG
-40to
DFD05TJ
DFD05TL
DFD05T
DFD05TN
DFD05TR
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Untitled
Abstract: No abstract text available
Text: BUZ60 PowerMOS transistor N AMER PHILIPS/DISCRETE ObE D • v " bbSBTBl 0014475 1 ■ ^ # , * May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ60
O220AB;
bbS3T31
001447b
T-39-11
BUZ60_
T-39-u"
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Untitled
Abstract: No abstract text available
Text: N AMER PHI LIP S/ DIS CR ETE j DhE D • PowerMOS transistor bbEBTBl 0014615 5 ■ BUZ155 T- 3V' 13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ155
T0218AA;
T-39-13
bb53T31
0014fl21
BUZ355
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transistor et 455
Abstract: transistor et 454
Text: N AMER PHI LI PS/ DI SCRETE DbE D PowerMOS transistor • bb53*131 0D147bb 7 ■ BCZ3$ l f - ~ _ 3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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0D147bb
T0218AA;
00147bT
T-39-13
BUZ351
001477E
transistor et 455
transistor et 454
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE DbE D PowerMOS transistor • bLSaiBl QQ14fl01 5 ■ BUZ307 t -s t -u May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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QQ14fl01
BUZ307
T0218AA;
T-39-11
0014fl0b
bfciS3T31
BU2307
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BUZ45
Abstract: transistor BUZ45 t03 package transistor pin dimensions IEC134 MC 140 transistor
Text: PowerMOS transistor ^ OLE D N AMER PHI LIP S/DISCRET E BUZ45 53=131 o a m t .47 T i3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies
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BUZ45
D01Hfc
801us.
T-39-13
BUZ45
transistor BUZ45
t03 package transistor pin dimensions
IEC134
MC 140 transistor
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BUK455-500B
Abstract: BJE 80 diode T0220AB
Text: N AP1ER P H I L I P S / D I S C R E T E bTE D • bbS313 1 DOBDbLiD 76T H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T 0220A B SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation
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bbS3131
BUK455-500B
T0220AB
03Qbfc
/V-10
BJE 80 diode
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BUK455-60A
Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455
Text: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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Q03DLi40
K455-60A/B
T0220AB
BUK455
BUK455-60A
K455-60A
BUK455-60B
diode d2s
T0220AB
k455
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BUK657
Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
Text: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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fab53131
D2D71D
BUK657-500A
BUK657-500B
BUK657-500C
BUK657
-500A
-500B
-500C
ID/100
BUK657-500C
T0220AB
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BUK446
Abstract: BUK446-1000A BUK446-1000B bu 508
Text: N AMER PHILIPS/DISCRETE 2SE D bbS3 1 3 1 Q02042S 0 WÊ PowerMOS transistor BUK446-1000A BUK446-1000B r - 3 cf ‘ 0 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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T-37-Ã
BUK446
-1000A
-1000B
BUK446-1000A
BUK446-1000B
bu 508
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K445
Abstract: BUK445 BUK445-500A BUK445-500B
Text: N AMER PHI LIP S/ DI SC RE TE 2SE D • ^53=131 D O S O m O =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T - 2 1 - 0 1 GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK445-500A
BUK445-500B
BUK445
-500A
-500B
K445
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ld 33v
Abstract: No abstract text available
Text: LVQ245 National Semiconductor 54LVQ/74LVQ245 Low Voltage Octal Bidirectional Transceiver with TRI-STATE Inputs/Outputs General Description Features The 'LVQ245 contains eight non-inverting bidirectional buff ers with TRI-STATE outputs and is intended for bus-oriented applications. Current sinking capability is 12 mA at both
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LVQ245
54LVQ/74LVQ245
LVQ245
ld 33v
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BR216
Abstract: M2480
Text: 2SE D • bb53T31 OOaESbT II □ I BR216 A N AMER P H I L I P S / D I S C R E T E 7 - 2 ^ - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR 2 16 is a m onolithic dual asymmetrical 65 V breakover diode in the T 0 -2 2 0 A B outline. Each half of the device conducts norm ally in one direction, but in the other direction it acts as a
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bb53T31
BR216
BR216
T0-220AB
M2474
T-25-05
M3231
M3240
M2480
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/D ISCR ETE • E5E D bbS^Bl 0QEE3DS □ ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. Their electrical isolation makes them ideal for
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BY229F
BY229Fâ
LLS3T31
bt53131
QD2531S
002531b
T-03-17
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STU 418
Abstract: No abstract text available
Text: Transient voltage suppressor diodes. The plastic material carries U/L recognition 94V-0. BZW04/STUB Series. 40QW. Case: DCM1/SMA Outline: W Unidirectional Axial Lead | S.M.D. BZW04 PSV8 BZW04-5V8 BZW04 P6V4 BZW04-6V4 BZW04 P7V0 BZW04-7V0 BZW04 P7V8 BZW04-7V8
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BZW04/STUBÂ
BZW04
BZW04-5V8
BZW04-6V4
BZW04-7V0
BZW04-7V8
STU 418
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BYD34D
Abstract: BYD34J BYD34G BYD34K BYD34M
Text: N AMER PHILIPS/DISCRETE h'lE D • Philips Semiconductors_ bh53^31 □0SbS7c1 410 ■ APX Maintenance type ~ not for new designs Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID
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BYD34
ttS3T31
00Eb5Ã
BYD34D
BYD34J
BYD34G
BYD34K
BYD34M
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