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    11ES1 Search Results

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    11ES1 Price and Stock

    NKK Switches MN11ES1W01

    SWITCH TOGGLE
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    DigiKey MN11ES1W01 Bulk 89 1
    • 1 $7.71
    • 10 $6.176
    • 100 $4.8819
    • 1000 $3.78052
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    Mouser Electronics MN11ES1W01
    • 1 $7.75
    • 10 $6.15
    • 100 $4.82
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    TTI MN11ES1W01 Each 1
    • 1 $7.75
    • 10 $6.16
    • 100 $6.04
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    NKK Switches M2011ES1W01

    SWITCH TOGGLE SPST 6A 125V
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    TTI M2011ES1W01 Bulk 1
    • 1 $5.02
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    Silver Palm Technologies SPEC-A11ES-1

    IC RF AMP HDR 20MHZ-6GHZ MODULE
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    DigiKey SPEC-A11ES-1 Box 1
    • 1 $2522.54
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    Well Buying Industrial Co Ltd TS008-E11ES1TRGB

    Pushbutton Switches Touch and Push Switch
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    Mouser Electronics TS008-E11ES1TRGB 61
    • 1 $15
    • 10 $15
    • 100 $14.1
    • 1000 $13.5
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    ABB Low Voltage Products and Systems P1-1ES/1NO1NC

    ENCL ESTOP TWIST ILL 1NO1NC | ABB P1-1ES/1NO1NC
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    RS P1-1ES/1NO1NC Bulk 1
    • 1 $77.01
    • 10 $65.46
    • 100 $59.3
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    Find more 11ES1 price and stock on Findchips.com

    11ES1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    11ES1 EIC Semiconductor Silicon Rectifier Diodes Original PDF
    11ES1 Nihon Inter Electronics 100 V, diode Original PDF
    11ES1 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    11ES1 Nihon Inter Electronics SILICON RECTIFIER DIODE Scan PDF
    11ES1 Nihon Inter Electronics General Purpose Silicon Rectifier Diode Scan PDF

    11ES1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11ES1

    Abstract: No abstract text available
    Text: ｓ DIODE 11ES1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g Rating Symbol Repetitive Peak Reverse Voltage


    Original     		PDF 11ES1 11ES1

    11ES1

    Abstract: 11ES2
    Text: 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		PDF 11ES1 11ES2 DO-41 UL94V-O MIL-STD-202, 11ES2

    Untitled

    Abstract: No abstract text available
    Text: 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		PDF 11ES1 11ES2 DO-41 UL94V-O MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: ｓ DIODE 11ES1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g Rating Symbol Repetitive Peak Reverse Voltage


    Original     		PDF 11ES1 11ES1

    Untitled

    Abstract: No abstract text available
    Text: www.eicsemi.com 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current


    Original     		PDF 11ES1 11ES2 DO-41 UL94V-O MIL-STD-202,

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    11ES1

    Abstract: No abstract text available
    Text: Type：11ES1 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコオンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧


    Original     		PDF 11ES1 11ES1

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    11es1

    Abstract: No abstract text available
    Text: Type：11ES1 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコオンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧


    Original     		PDF 11ES1 11es1

    schematic diagram 180v dc motor speed controller

    Abstract: C4106 transistor C4106 t5001 ic tl8850ap c4060 transistor tl8850 C6113 EM-553-F9T C4054 transistor
    Text: A B C D E F G H AIWA VX-G142 OPERATION 1 SCHEMATIC DIARGAM 8 8 OPERATION 1 PCB 7 7 OS753 GP1U281R 3 GND FROM OPERATION 2 B+ 1 Vout 6 ATR LED 7 T-REC LED 8 REC LED PLAY BACK LED SW Q758 DTC114TS C751 100P B W804 1 PLAY BACK D795 270 R754 270 R793 W801 POWER LED SW


    Original     		PDF VX-G142 OS753 GP1U281R EM-553-F9T DTC114TS CY759 EQ-552F9T schematic diagram 180v dc motor speed controller C4106 transistor C4106 t5001 ic tl8850ap c4060 transistor tl8850 C6113 EM-553-F9T C4054 transistor

    FSF05B60

    Abstract: FSF10B60 F10P10Q 30pfb60 SF05A60-11TSF05B60-11A C30P10Q FCF20B60 f10p04q F5KF20B F10P06Q
    Text: 旧製品・現行品対応表 Discontinued products and their replacements No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 旧製品 現行品 Discon. Replacement


    Original     		PDF 11ES1 10EDB10 11ES2 10EDB20 10JDA10 10JDA20 10JDA40 10DDA10 10DDA20 10DDA40 FSF05B60 FSF10B60 F10P10Q 30pfb60 SF05A60-11TSF05B60-11A C30P10Q FCF20B60 f10p04q F5KF20B F10P06Q

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


    Original     		PDF PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent

    BT136-600E equivalent

    Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
    Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.


    Original     		PDF 10TQ045S 11DQ03 11DQ04 11EQ03 11EQ04 11EQS 15DF4 1N3645 BT136-600E equivalent D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent

    BU4508DX equivalent

    Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
    Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent

    15bl11

    Abstract: 11EFS1 11EFS2 11EFS3 11EFS4 11ES2 12BG11 12BH11 12CC12 12JH11
    Text: - * Ìt 11EFS1 11EFS2 11EFS3 11BFS4 11ES1 11ES2 12BG11 12BH11 12CC12 12CD12 12DG11 12DH11 12FCÌ2 12FD12 12FG11 12FHU 12GC11 12GG11 12GH11 12JC11 12JG11 12JH11 12LC11 12MF5 12MF10 12MF15 12MF20 12MF30 12MF30R 12MF40 12MF40R 12NC11 15BC11 15BD11 15BG15 15BL11


    OCR Scan     		PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 150ns 15DF6 15bl11 11EFS2 11EFS3 11EFS4 12BH11 12CC12 12JH11

    11ES2

    Abstract: 15bl11 11EFS1 11EFS2 11EFS3 11EFS4 12BG11 12BH11 12CC12 10-32UNF2A
    Text: - * Ìt 11EFS1 11EFS2 11EFS3 11BFS4 11ES1 11ES2 12BG11 12BH11 12CC12 12CD12 12DG11 12DH11 12FCÌ2 12FD12 12FG11 12FHU 12GC11 12GG11 12GH11 12JC11 12JG11 12JH11 12LC11 12MF5 12MF10 12MF15 12MF20 12MF30 12MF30R 12MF40 12MF40R 12NC11 15BC11 15BD11 15BG15 15BL11


    OCR Scan     		PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 sc-11 -28UNF-2ATÂ i042U 15bl11 11EFS2 11EFS3 11EFS4 12BH11 12CC12 10-32UNF2A

    11ES2

    Abstract: 12JH11 15bl11 15CD11 11EFS1 11EFS2 11EFS3 11EFS4 12BG11 12BH11
    Text: - * Ìt 11EFS1 11EFS2 11EFS3 11BFS4 11ES1 11ES2 12BG11 12BH11 12CC12 12CD12 12DG11 12DH11 12FCÌ2 12FD12 12FG11 12FHU 12GC11 12GG11 12GH11 12JC11 12JG11 12JH11 12LC11 12MF5 12MF10 12MF15 12MF20 12MF30 12MF30R 12MF40 12MF40R 12NC11 15BC11 15BD11 15BG15 15BL11


    OCR Scan     		PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 15B015 15BL11 15CC11 12JH11 15bl11 15CD11 11EFS2 11EFS3 11EFS4 12BH11

    15CD11

    Abstract: 12CC12 12MF20 12GG11 15bl11 11EFS1 11EFS2 11EFS3 11EFS4 11ES2
    Text: - * Ìt 11EFS1 11EFS2 11EFS3 11BFS4 11ES1 11ES2 12BG11 12BH11 12CC12 12CD12 12DG11 12DH11 12FCÌ2 12FD12 12FG11 12FHU 12GC11 12GG11 12GH11 12JC11 12JG11 12JH11 12LC11 12MF5 12MF10 12MF15 12MF20 12MF30 12MF30R 12MF40 12MF40R 12NC11 15BC11 15BD11 15BG15 15BL11


    OCR Scan     		PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 15B015 15BL11 15CC11 15CD11 12CC12 12MF20 12GG11 15bl11 11EFS2 11EFS3 11EFS4

    Untitled

    Abstract: No abstract text available
    Text: SILICON RECTIFIER DIODE 1IESI 11ES2 11ES4 “ g i a /100~800 v FEATURES 2.7 .106 ° Miniature Size M AX DIA 0 Low Forward Voltage Drop ° Low Reverse Leakage Current 0.60(.024)DIAa 0.54C021) .27(1.06) ° High Surge Capability MIN ° 26mm and 52mm Inside Tape Spacing


    OCR Scan     		PDF 11ES2 11ES4 54C021) 11ES1 11ES6 11ES1 11ES2 11ES8

    30KF60B

    Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
    Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166


    OCR Scan     		PDF 1N4001 1N4002 1N4004 1N4005 1N4006 1N4007 2VF10CT F20CT F30CT F40CT 30KF60B 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f

    11ES2

    Abstract: No abstract text available
    Text: SILICON RECTIFIER DIODE ÌA/IOO— 800V JJIII 11ES4 FEATURES ‘2.7 .106 dia . M A X U1A ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.6CH.024)nrA 0.54<.0211 ° High Surge Capability .27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing


    OCR Scan     		PDF 11ES4 11ES1 11ES2 11ES4 11ES8 -25-C 11ES1- 11ES8

    11ES2

    Abstract: 11ES1 11ES4 11ES6 11ES8
    Text: llESl 11ES2 11ES4 11ES6 11ES8 1A /10 0 — 800V SILICON RECTIFIER DIODE FEATU R ES o Miniature Size MAX ULA ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.601024 DIA 0.54 .021) ° High Surge Capability 27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing


    OCR Scan     		PDF A/100â 11ES1 11ES2 11ES4 11ES6 11ES8 11ES6 11ES8 LL1S123

    F10P100

    Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
    Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04


    OCR Scan     		PDF 11EQS03L 11EQS02L 11EQ03 11EQ04 11EQ05 11EQ06 11EQ09 11EQ10 11EQS03 11EQS04 F10P100 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F