BYV10 Search Results

Contextual Info: TO -22 F BYV10EX-600P Ultrafast power diode 25 September 2014 Product data sheet 1. General description Ultrafast power diode in a SOD113 2-lead TO-220F plastic package. 2. Features and benefits • • • • • • • Fast switching Isolated plastic package

BAT49

Abstract: BYV1060 BYV10-60 TMMBAT43 bat41 bat43 BAS70 MELF BAT43 BAT47 BYV10-40 DO35
Contextual Info: POWER RECTIFIERS SIGNAL SCHOTTKY DIODES DO35 Voltage max Current DO41 Part Number 20 Volts 350 mAmps BAT47 30 Volts 200 mAmps BAT42 BAT43 TMMBAT42 TMMBAT43 40 Volts 350 mAmps BAT48 TMMBAT48 1000 mAmps BYV10-40 BYV10-40 60 Volts 15mAmps 1N6263 TMM6263 1000 mAmps

Contextual Info: Philips Sem iconductors Product specification Schottky barrier diodes BYV10 series FEATURES DESCRIPTION • Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass

DIODE byv10-20

Abstract: BYV10 BYV1020 JTP 55 diode BYV10-20 U-28
Contextual Info: N AMER PHILIPS/ DIS CRETE b'IE D • bbSa^ai GG E b b M 1! bfc>4 HIAPX BYV10 J l SCHOTTKY BARRIER DIODE Schottky barrier diode w ith an integrated p-n junction protection ring in a SOD81 glass envelope and intended fo r use in low output voltage, low-power switch-mode power supplies and, in general, in

Contextual Info: TO -22 F BYV10X-600P Ultrafast power diode 30 August 2013 Product data sheet 1. General description Ultrafast power diode in a SOD113 2-lead TO-220F plastic package. 2. Features and benefits • • • • • • Fast switching Isolated plastic package

Contextual Info: TO -22 AC BYV10-600P Ultrafast power diode 3 January 2014 Product data sheet 1. General description Ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 2. Features and benefits • • • • • Fast switching Low leakage current Low forward voltage drop

Contextual Info: BYV10-60 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.20 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0

Contextual Info: BYV10-20A Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25 V(FM) Max.(V) Forward Voltage750m @I(FM) (A) (Test Condition)3.0

Contextual Info: BYV10-200T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)5.0

Contextual Info: TO -22 F BYV10X-600P Ultrafast power diode 3 January 2014 Product data sheet 1. General description Ultrafast power diode in a SOD113 2-lead TO-220F plastic package. 2. Features and benefits • • • • • • Fast switching Isolated plastic package

DIODE byv10-20

Abstract: BYV10 BYV10-30 BYV10-40 BYV10-20 sod81 BYV1020
Contextual Info: Philips Semiconductors Product specification Schottky barrier diodes BYV10 series FEATURES DESCRIPTION • Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass

Contextual Info: BYV10-600T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)5.0

DIODE byv10-20

Abstract: sod81 BYV10-40 SC01 Mounting 1996 1 BYV10 BYV10-20 BYV10-30 M3D119 byv1040
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes

Contextual Info: TO -22 AC BYV10-600P Ultrafast power diode 30 August 2013 Product data sheet 1. General description Ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 2. Features and benefits • • • • • Fast switching Low leakage current Low forward voltage drop

Contextual Info: BYV10-500T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage500 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)5.0

Contextual Info: BYV10-150T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)5.0

ByV schottky

Contextual Info: C T SG S-TH O M SO N ^T/.llD lgœ ilLIgTrœ M gi BYV10-20A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­

Contextual Info: BYV10-400T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)5.0

Contextual Info: BYV10-100T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)5.0

Contextual Info: BYV10-300T Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current5.0 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)5.0

Contextual Info: N AMER PHILIPS/ DISCRE TE b'lE » bbS3T31 Q D E b b M 1! bb4 H A P X BYV10 JL SCHOTTKY BARRIER DIODE Schottky barrier diode with an integrated p-n junction protection ring in a SOD81 glass envelope and intended for use in low output voltage, low-power switch-mode power supplies and, in general, in

BYV10-40

Abstract: BYV10-30 DIODE byv10-20 BYV10-20 SC01 Mounting 1996 1 BYV10 PHILIPS BYV10 BYV1020 Philips applications BYV1040
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes

Contextual Info: BYV10-30 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1.0

Contextual Info: BYV10-20 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)60’ V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1.0