DIODE BA 148 Search Results

Diode BA 148

Abstract: pin diode do35 BA284
Contextual Info: SIEMENS BA 284 Silicon Switching Diode • Low-Ioss RF switch for use at frequencies above 10 MHz, especially in TV tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1» BA 284 yellow Q62702-A632 DO-35 DHD I - |3 — 1 4 EHA07001

irkv 300

Abstract: k142 IRKH135-16 SCR 40 RIA 120 25 RIA 120 SCR irkt 40 T 705 scr IRKT AN TBT 136 IRKH141-20
Contextual Info: 5*îE I INR 4Û554SE □OlBB'îO 705 assae irk’35' i R I SCR / SCR and SCR / DIODE NEW INT-A-pak Power Modules INTERNATIONAL RE CT IF IE R Features • H igh v o lta g e ■ E le c tric a lly is o la te d ba se p late ■ 3000 V RMS is o la tin g v o lta g e

Contextual Info: fciEMTÖES 0 0 1 Ö 3 1 0 2*32 • MITSUBISHI OPTICAL DEVICES FU-630SLD-2M12/2M3/2M6/2M4 1.48 um PUMP LD MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION FEATURES Mitsubishi’s FU-630SLD series 1480nm laser diode modules are designed as optical pumping sources

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

IEC 947 EN 60947

Abstract: MCC panel design buzzer panel DC-13 Q300 RJ12 1302401 VDE 0660 - 107 Sonic Drive
Contextual Info: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling

Contextual Info: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner

Contextual Info: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner

Contextual Info: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

Contextual Info: LED System Driver IC ICLS8023Z Off-Line LED Current Mode Controllers with Integrated 800 V CoolMOS & Startup Cell Data Sheet Version 1.0, 2011-09-26 Industrial & Multimarket Edition 2011-09-26 Published by Infineon Technologies AG 81726 Munich, Germany

Trimble DSS 500

Contextual Info: LED System Driver IC ICLS8023Z Off-Line LED Current Mode Controllers with Integrated 800 V CoolMOS & Startup Cell Data Sheet Version 1.0, 2011-09-26 Industrial & Multimarket Edition 2011-09-26 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: INTERNATIONAL RECTIFIER bSE D International Hil]Rectifier • MÖSSHS2 DDlbMfi? 751 ■ s e r ie s mb SINGLE PHASE BRIDGE & jb Power Modules 1 0 A Features 2 5 A ■ Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal conductivity package,

diode BA148

Abstract: BA148 BA148 diode
Contextual Info: BA148 HIG H SPEED SILICON DIODE Double diffused general purpose diode in a DO-14 plastic envelope for use as line phase detector, clamping diode, scan rectifier for the supply of the small signal parts in television receivers etc. QUICK REFERENCE DATA C rest working reverse voltage

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

C7-A20 releco

Abstract: C7-A20FX C7-A20X, RELECO C7-A20X C7-A20, RELECO C7-A20 relay c7-a20dx C7-A28 releco RELECO s7-m C7-A28DX
Contextual Info: QRC series C7-A2x Type C7-A2x/ . V Standard relay 2 change-over contact Maximum contact load Recommended minimum contact load 10 A/250 V 10 A/30 V 10 mA/10 V 5 mA/5 V Contacts Material Standard Code 0 Optional Code 8 Optional Code 9 Rated current Switch-on current max. 20 ms

74ABT16543

Abstract: 8C12 8EN10 BT16543DGG BT16543DL
Contextual Info: INTEGRATED CIRCUITS ÀN TV M J"L IH 74ABT16543 16-bit octal latched transceivers with dual enable 3-State Product specification 1995 Feb 17 IC23 Data Handbook Philips Semiconductors PHILIPS PH ILIPS 7110fl2fa 00fl7fl4S 171 This Material Copyrighted By Its Respective Manufacturer

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.

lf351 "cross reference"

Abstract: IC LF351
Contextual Info: LF351 5flE D • National 4LM Semiconductor b5011EM 007¿Qg5 b70 » N S C S NATL SEMICOND LINEAR T -T M 5 LF351 Wide Bandwidth JFET Input Operational Amplifier General Description T h e LF351 is a low co st high speed JF E T input operational a m plifier w ith an internally trim m ed input o ffs e t voltage

EARTH LEAKAGE RELAY

Abstract: ASEA AUTO RECLOSURE recloser razfe recloser RAZOG ABB RXIDF ABB RAAAE RXIDF 2H ABB RELAY - RXM ABB RELAY RXM
Contextual Info: Info-No. 4 1 I I I I f M P I INFORMATION P RK 851-303 E From/Date Reg. RFR, August 19S2 Edition 2 ASEA BROWN BOVERI A B B Relays Page 5651 1 Replaces cat.: RK 85-15 E and RK 85-17 E RECLOSING RELAY TYPE RAAAE Single shot three-phase reclosure Fig 1. Reclosing relay RAAAE

74ABT2952

Abstract: 74ABT2952D 74ABT2952DB 74ABT2952N 74ABT2952PW
Contextual Info: INTEGRATED CIRCUITS 74ABT2952 Octal registered transceiver 3-State Product specification 1995 Feb 16 IC23 Data Handbook Philips Semiconductors PHILIPS • 711DflSb □□flbcIS7 b û 7 ■ This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors

lrr3

Contextual Info: P D -2 .3 4 1 International US Rectifier HEXFRED Provisional Data Sheet HFA08TB60 600V, 8A ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Units Characteristics Vr VRRM 600 V IF AV 8 A trr (typ) 18 ns Qrr (typ) 65 nC IRRM 5 A di(rec)M/dt (typ)