MOZ 23
Abstract: DD1000S33HE3 48 H diode
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
MOZ 23
DD1000S33HE3
48 H diode
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DD1000S33
Abstract: FZ1000R33HE3
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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DD1000S33HE3
DD1000S33
FZ1000R33HE3
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Untitled
Abstract: No abstract text available
Text: NJM13700M IL00 * DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIFIER —TOP VIEW— AMP BIAS IN A 1 16 AMP BIAS IN B DIODE BIAS A 2 15 DIODE BIAS B + IN A 3 14 (+) IN B (–) IN A 4 13 (–) IN B + – + – OUT A 5 12 OUT B 6 V– (–15 V) V+ 11 (+15 V)
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NJM13700M
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diode marking v6
Abstract: KDV300V VR1060 C25V
Text: SEMICONDUCTOR KDV300V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=14.5 Min. Low Series Resistance : rs=1.1 (Max.) C D 1 2 B DIM A B C D E F A MAXIMUM RATING (Ta=25
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KDV300V
C2V/C25V
470MHz
diode marking v6
KDV300V
VR1060
C25V
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diode 1n4
Abstract: No abstract text available
Text: SEMICONDUCTOR 1N4148 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Fast switching diode B C DIM MILLIMETERS A MAX 3.9 B MIN 27.5 MAX 1.9 C MAX 0.52 D A B MAXIMUM RATING Ta=25 CHARACTERISTIC D SYMBOL RATING
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1N4148
DO-35
diode 1n4
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diode marking v6
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV300V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=14.5 Min. ・Low Series Resistance : rs=1.1Ω(Max.) C D 1 2 B DIM A B C D E F A MAXIMUM RATING (Ta=25℃)
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C2V/C25V
KDV300V
470MHz
470MHz
diode marking v6
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GP 836 DIODE
Abstract: 3fv 60 HP 3379 KDZ9.1FV ZENER QF KDZ10FV KDZ20FV KDZ16VV KDZ3.6FV kdz16fv
Text: SEMICONDUCTOR KDZ3.6FV~KDZ36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C 6%. D Nominal Voltage Tolerance About B DIM A B C
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KDZ36FV
KDZ36VV
KDZ33VV
KDZ30VV
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ27VV
20x20mm
GP 836 DIODE
3fv 60
HP 3379
KDZ9.1FV
ZENER QF
KDZ10FV
KDZ20FV
KDZ16VV
KDZ3.6FV
kdz16fv
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FZ1500R33HE3
Abstract: C763
Text: Technische Information / technical information FZ1500R33HE3 IGBT-Module IGBT-modules IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 Diode %&' ## % *& +,- ) ./ 0
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FZ1500R33HE3
FZ1500R33HE3
C763
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS SDUR/B/D1560CT Green Products Technical Data Data Sheet N1286, Rev. - SDUR/B/D1560CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode
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SDUR/B/D1560CT
N1286,
SDUR/B/D1560CT
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS SDUR/B/D15120CT Green Products Technical Data Data Sheet N1331, Rev. - SDUR/B/D15120CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode
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SDUR/B/D15120CT
N1331,
SDUR/B/D15120CT
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d1530c
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS SDUR/B/D1530CT Green Products Technical Data Data Sheet N1266, Rev. - SDUR/B/D1530CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode
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SDUR/B/D1530CT
N1266,
SDUR/B/D1530CT
d1530c
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS SDUR/B/D10120CT Green Products Technical Data Data Sheet N1328, Rev. - SDUR/B/D10120CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode
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SDUR/B/D10120CT
N1328,
SDUR/B/D10120CT
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS SDUR/B/D15100CT Green Products Technical Data Data Sheet N1342, Rev. - SDUR/B/D15100CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode
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SDUR/B/D15100CT
N1342,
SDUR/B/D15100CT
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4FV diode
Abstract: 3fv 60 2FV 60 diode diode 3FV 60 mark 2fv diode kdz2.0fv KDZ9.1FV diode zener 3FV 36FV 4FV 60 on
Text: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C D Sharp Breakdown Characteristic. B DIM A B C D E F A
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KDZ36FV
KDZ33FV
KDZ30FV
KDZ18FV
KDZ20FV
KDZ22FV
KDZ24FV
KDZ27FV
4FV diode
3fv 60
2FV 60 diode
diode 3FV 60
mark 2fv diode
kdz2.0fv
KDZ9.1FV
diode zener 3FV
36FV
4FV 60 on
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS SDUR/B/D1540CT Green Products Technical Data Data Sheet N1276, Rev. - SDUR/B/D1540CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode
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SDUR/B/D1540CT
N1276,
SDUR/B/D1540CT
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Untitled
Abstract: No abstract text available
Text: 1000V 75A APT75DQ100B APT75DQ100S APT75DQ100BG* APT75DQ100SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE B PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode
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APT75DQ100B
APT75DQ100S
APT75DQ100BG*
APT75DQ100SG*
O-247
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Untitled
Abstract: No abstract text available
Text: Silicon Diode Array B G X 50 A Bridge configuration High-speed switch diode chip ~3 4 Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package B G X 50 A U1 Q62702-G35 Q62702-G38 SOT 143 Maximum ratings per diode Parameter
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Q62702-G35
Q62702-G38
I-150
BGX50
BGX50A
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1N23 diode
Abstract: 1N23 K1007 1N23 Diode Holder 1n23 jan noise diode
Text: MICROWAVE MIXER DIODE I48CAY/B Dev. No. DEVELOPMENT SAMPLE DATA Schottky b a rrie r low noise m ixer diode for use at X band. The 148CAY/B is interchangeable with the 1N23 s e r ie s . QUICK REFERENCE DATA Typical noise figure at X band 6.5 Frequency range
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I48CAY/B
148CAY/B
375GHz,
45MHz
K1007,
45MHz.
JAN-106holder,
1N23 diode
1N23
K1007
1N23 Diode Holder
1n23 jan
noise diode
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Untitled
Abstract: No abstract text available
Text: ERD24-06-ERD74-06I12A •600V • : Outline Drawings FAST RECOVERY DIODE : Features • Glass passivated chip • High reverse voltage capability. • Stud mounted : Applications • Sw itching power supplies • Free-wheel diode • Sn u b b e r diode •
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ERD24-06-ERD74-06I12A
ERD24-06,
ERD74-06
50HzJE
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b lE b b S B ^ l OOSblSD fl71 BA314 D IAPX A LOW VOLTAGE STABISTOR W Z Silicon planar epitaxial diode in DO-35 envelope. This diode is intended for low voltage stabilizing e.g. bias stabilizer in class-B output stages, clipping, clamping and meter protection.
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BA314
DO-35
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Untitled
Abstract: No abstract text available
Text: BB619 _ / V VHF VARIABLE CAPACITANCE DIODE The B B 61 9 is a V H F variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band B up to 460 M H z in all-band tuners. The diode is encapsulated in a hermetically sealed S O D 1 2 3 plastic envelope suitable for surface mounting.
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BB619
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MRR 50-10
Abstract: mrr 50-08 MRR50-12 DIODE 73 MRR35 ABB thyristor modules mrr50 thyristor modules mrr ASEA thyristor GTO thyristor
Text: A S E A B R O W N /A B B ñ3 S EM IC O N D l Q04Ö3GÖ 0QQD503 ñ T - Z 5 -O Í Modules with reverse conducting Module mit rückwärtsleitenden Thyristoren Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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GRR90.
MRR 50-10
mrr 50-08
MRR50-12
DIODE 73
MRR35
ABB thyristor modules
mrr50
thyristor modules mrr
ASEA thyristor
GTO thyristor
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diode LZ. 02
Abstract: diode LZ. 58 BZX88 BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67
Text: MICROE SILICON PLANAR HIGH-SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature T yp e Description M ax. V RWM Volts BA W 63 BAW 63A BA W 63B B A W 64 B A W 65 BA W 66 BA W 67 BA W 68 Single diode Single diode Single diode C o m m on cathode diode pair
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BAW63
BAW63A
BAW63B
BAW64
BAW65
BAW66
BAW67
BAW68
maximu15
BZX88-C10
diode LZ. 02
diode LZ. 58
BZX88
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE DD60HB/KD60HB UL;E76102 M Power Diode Module D D 60H B series are designed for various rectifier circuits. D D 60H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is
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DD60HB/KD60HB
E76102
DD60HB-120
B-103
QQ022bl
7TT1243
0Q022b2
DD60HB
B-104
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