KDV300V Search Results

kdv300v

Contextual Info: S EM IC O N D U C T O R KDV300V TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEA T U RE S • High Capacitance Ratio : C2v/C 25v= 14.5 M in. • Low Series Resistance : rs= l .l & (M ax.) M A X IM U M RATING (Ta=25°C)

marking V6

Abstract: KDV300V V6 marking MARKING "V6"
Contextual Info: SEMICONDUCTOR KDV300V MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking V6 No. 2005. 4. 8 Item Marking Dvscription Device Mark V6 KDV300V Revision No : 0 1/1

diode marking v6

Contextual Info: SEMICONDUCTOR KDV300V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=14.5 Min. ・Low Series Resistance : rs=1.1Ω(Max.) C D 1 2 B DIM A B C D E F A MAXIMUM RATING (Ta=25℃)

diode marking v6

Abstract: KDV300V VR1060 C25V
Contextual Info: SEMICONDUCTOR KDV300V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=14.5 Min. Low Series Resistance : rs=1.1 (Max.) C D 1 2 B DIM A B C D E F A MAXIMUM RATING (Ta=25

Contextual Info: SEMICONDUCTOR KDV300V TECHNICAL DATA TV Tuning. FEATURES 2005. 4. 7 Revision No : 0 1/2