switching circuit
Abstract: DIODE 19 9
Text: Contents Section 1 Introduction. 1 Section 2 PIN Diode Features. 3 Section 3 Hitachi PIN Diode Product Line .
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Reference Diode 5,6V
Abstract: No abstract text available
Text: SEMICONDUCTOR USFZ 5.6V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. WAVE FORM CLIPPER B A H G FEATURES C E F Sharp breakdown characteristic 2 C E D 1 CATHODE MARK MAXIMUM RATING Ta=25
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5867A DL-3149-054 Red Laser Diode DL-3149-054 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3149-054 is 670 nm Typ. index guided AlGaInP laser diode with low threshold current and high operating temperature. The low threshold
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EN5867A
DL-3149-054
DL-3149-054
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Untitled
Abstract: No abstract text available
Text: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses
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DSS6-0025BS
O-252
60747and
20110915a
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transistor irf 645
Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
Text: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4601A
IRGR3B60KD2
EIA-481
EIA-541.
EIA-481.
transistor irf 645
diode 400v 2A ultrafast
AN-994
C-150
IRFR120
IRFU120
IRGR3B60KD2
R120
all transistor IRF 310
RG3250
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1842m
Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser
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200mA
400mA
Aug-05
29-Sep-09
LDD200P-00400-A
1842m
DIODE 4d
LDD400-1P
ldd200
2i125
LDD200-2P
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DL-3148-033
Abstract: No abstract text available
Text: Ordering number : EN5860A DL-3148-033 Red Laser Diode DL-3148-033 Index Guided AlGaInP Laser Diode Overview Package Dimensions The DL-3148-033 is index guided 635 nm Typ. AlGaInP laser diode with low threshold current and high operating temperature. The low threshold
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EN5860A
DL-3148-033
DL-3148-033
635nm
670nm
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DL-3147-021
Abstract: No abstract text available
Text: Ordering number : EN5861A DL-3147-021 Red Laser Diode DL-3147-021 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-021 is index guided 645 nm Typ. AlGaInP laser diode with low threshold current. The low threshold current is achieved by a strained
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EN5861A
DL-3147-021
DL-3147-021
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Untitled
Abstract: No abstract text available
Text: DSS6-0045AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 6A 0.50 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values
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DSS6-0045AS
O-252
6-0045AS
60747and
20110915a
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IRGB5B120KD
Abstract: TF010
Text: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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94385F
IRGB5B120KD
O-220
O-220AB
O-220AB
IRGB5B120KD
TF010
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NX8562LB
Abstract: NX8562LB279 NX8562LB295 NX8562LB303 NX8562LB311 NX8562LB318 NX8562LB326 continuous wave laser stm-16
Text: DATA SHEET LASER DIODE NX8562LB 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LB is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).
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NX8562LB
NX8562LB
NX8562LB279
NX8562LB295
NX8562LB303
NX8562LB311
NX8562LB318
NX8562LB326
continuous wave laser stm-16
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5864A DL-3147-161 -261 Red Laser Diode DL-3147-161(-261) Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-161(-261) is index guided 650 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low
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EN5864A
DL-3147-161
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zener diode rd20e b2
Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
Text: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.
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RD200E
DO-35)
RD200E
DO-35
RD130E
RD200E:
RD39E
zener diode rd20e b2
diode zener 1N 398
zener diode B3
Zener Diode B1 9
zener diode rd13e
zener diode B5
RD6.2E
zener diode rd39e b5
RD6.8E
NEC Zener diode RD3.0E
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otdr
Abstract: NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7561JB-BC 81 110 thermistor
Text: DATA SHEET LASER DIODE NX7561JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7561JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.
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NX7561JB-BC
NX7561JB-BC
14-pin
otdr
NX7327BF-AA
NX7328BF-AA
NX7329BB-AA
NX7361JB-BC
NX7526BF-AA
NX7527BF-AA
81 110 thermistor
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NX5304
Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor
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NX6306
NX6306S
NX6306G
NX5304
NX5306
NX6306GH
NX6306GK
NX6306SH
NX6306SK
inGaAs
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are
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NX5522
R08DS0029EJ0100
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Si5853DC
Abstract: Si5856DC Si5856DC-T1-GE3
Text: Si5856DC Vishay Siliconix N-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 0.045 at VGS = 2.5 V 5.6 0.052 at VGS = 1.8 V 5.2 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage
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Si5856DC
Si5853DC
2002/95/EC
18-Jul-08
Si5856DC-T1-GE3
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PIN diode SPICE model
Abstract: MSWSS-020-40 MSWSHB-020-30 Diodes D250 MSWSH 040-40 MMSPN050-53 MEST2G-080-25 MEST2G-050-80 MSWSH-020-24 MSWSHC-040-40
Text: Spice Models for Aeroflex / Metelics PIN Diode Switch Elements CHIP Robert Caverly Non-Linear Diode SPICE N=1 PIN Diode SPST & SPDT Switch Elements S Par's Is mA Iknee mA Repi Ohm s CJmod el Rlim Ω t nSec W um CJ50 pF Rs Ω PKG Series PIN Y Y 2.50E-07
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MEST2G-010-20
MEST2GFC-010-25
MEST2G-020-15
MEST2G-025-10
MEST2G-050-45
MEST2G-050-80
MEST2G-080-25
MEST2G-150-10-CM30
MEST2G-150-10-CM32
MEST2G-150-20
PIN diode SPICE model
MSWSS-020-40
MSWSHB-020-30
Diodes D250
MSWSH 040-40
MMSPN050-53
MSWSH-020-24
MSWSHC-040-40
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laser driver TTL circuits
Abstract: 4023N 6 pin laser diode automatic laser power control MAX3261 MAX3261CCJ MAX3261ECJ 4015N MAX3261-FG07
Text: 19-0323; Rev 4; 8/97 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver _Applications Laser Diode Transmitters 531Mbps and 1062Mbps Fibre Channel _Features ♦ Rise Times Less than 250ps ♦ Differential PECL Inputs
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25Gbps
531Mbps
1062Mbps
250ps
MAX3261CCJ
MAX3261ECJ
MAX3261E/D
laser driver TTL circuits
4023N
6 pin laser diode
automatic laser power control
MAX3261
MAX3261CCJ
MAX3261ECJ
4015N
MAX3261-FG07
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NXP SMD DIODE MARKING CODE T4
Abstract: MARKING CODE t4 diode anode common
Text: PESD3V3L5UK; PESD5V0L5UK Low capacitance unidirectional fivefold ESD protection diode arrays Rev. 1 — 25 August 2010 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional fivefold ElectroStatic Discharge ESD protection diode
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OT891
AEC-Q101
NXP SMD DIODE MARKING CODE T4
MARKING CODE t4 diode anode common
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zener diode numbering system
Abstract: uhf amp circuit diagrams Teledyne Relays 28vdc 116cm IN 965 b zener diode Power supply AC to DC zener diode er116c
Text: TELEDYNE RELAYS SERIES CENTIGRID ESTABLISHED RELIABILITY RELAY 116C DPDT CMOS COMPATIBLE SERIES DESIGNATION RELAY TYPE 116C DPDT general purpose relay with internal power MOSFET driver, Zener diode gate protection and diode coil suppression INTERNAL CONSTRUCTION
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CMPZ4678
Abstract: CMPZ4679 CMPZ4680 CMPZ4681 CMPZ4682 CMPZ4683 CMPZ4684 CMPZ4685 CMPZ4686 CMPZ4717
Text: Central CMPZ4678 THRU CMPZ4717 SURFACE MOUNT 350mW LOW LEVEL SILICON ZENER DIODE 5% TOLERANCE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4678 Series silicon zener diode is a high quality voltage regulator designed for applications requiring an
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CMPZ4678
CMPZ4717
350mW
OT-23
100mA
CMPZ4711
CMPZ4712
CMPZ4713
CMPZ4714
CMPZ4678
CMPZ4679
CMPZ4680
CMPZ4681
CMPZ4682
CMPZ4683
CMPZ4684
CMPZ4685
CMPZ4686
CMPZ4717
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chn 850
Abstract: CHN 845 chn 710 CHN 510 marking chc chn 935 CMHZ4614 CMHZ4615 CMHZ4616 CMHZ4617
Text: Central CMHZ4614 THRU CMHZ4627 TM Semiconductor Corp. SURFACE MOUNT 500mW LOW NOISE SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4614 Series Silicon Zener Diode is a high quality voltage regulator designed for low leakage, low
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CMHZ4614
CMHZ4627
500mW
CMHZ4614
OD-123
100mA
CMHZ4622
CMHZ4623
CMHZ4624
CMHZ4625
chn 850
CHN 845
chn 710
CHN 510
marking chc
chn 935
CMHZ4615
CMHZ4616
CMHZ4617
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Zener Diode 3A
Abstract: pz22
Text: PolyZen Devices PolyZen Devices Polymer Protected Zener Diode PolyZen devices are polymer enhanced precision Zener diode micro-assemblies that help protect sensitive electronics from damage caused by inductive voltage spikes, voltage transients, use of incorrect power supplies
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