DIODE 4151 Search Results

DIODE 4151 Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

DIODE 4151 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
LL4151 Abstract: No abstract text available Text: 1N 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data Case: DO-34, DO-35 Glass Case	Original	PDF	LL4151. DO-34, DO-35 150OC 100MHz, LL4151
MINI-MELF DIODE BLACK CATHODE Abstract: 1N4151 651 diode Text: L L 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the DO-35 case with the type designation 1N4151.	Original	PDF	DO-35 1N4151. OD-80C) 150OC 100MHz, MINI-MELF DIODE BLACK CATHODE 1N4151 651 diode
Untitled Abstract: No abstract text available Text: 1N 4151 Small-Signal Diode Fast Switching Rectifier Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data Case: DO-35 Glass Case	Original	PDF	LL4151. DO-35 150OC 100MHz,
Untitled Abstract: No abstract text available Text: L L 4151 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 75V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the	Original	PDF	150mA DO-35 1N4151. OD-80C) 150OC 100MHz,
CM05B Abstract: D65084 1N78 1N5764 1N5764MR C65101 Text: MIL-s-19500&l EL 19November 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE,GALLIUM ARSENIDE, MIXER TYPE1N5764, and 1N5764MR 1N5764M , . 1. ScOPE 1.1Scope.Thisspecification covers thedetailrequirements forGal!iumArsenide, Luw Barrier, HighSee:itivity,	Original	PDF	L-s-19500 19November TYPE1N5764, 1N5764M 1N5764MR DMR1426 JAN66WHICH CM05B D65084 1N78 1N5764 1N5764MR C65101
D45H11 equivalent replacement Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS	Original	PDF	MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100
BU108 Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS	Original	PDF	MJ10007 Curr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
MJ3001 equivalent Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS	Original	PDF	MJ10005 MJ10005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ3001 equivalent bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
2sC144 Abstract: lc 3101 ST BDW83C BUX98A BU326 BU108 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for	Original	PDF	MJE18604D2 MJE18604D2 Spr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sC144 lc 3101 ST BDW83C BUX98A BU326 BU108 BU100
motorola 415 D2PAK Abstract: 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network	Original	PDF	BUL44D2 BUL44D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C motorola 415 D2PAK 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c
2SC1943 Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network	Original	PDF	MJE18004D2 MJE18004D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SC1943 bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
pin configuration transistor bd140 Abstract: TRANSISTOR REPLACEMENT GUIDE BU108 Drive IC 2SC3346 Replacement MOTOROLA BDX54 2sA671 transistor BU326 BU100 transistor NSD134 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network	Original	PDF	BUL45D2 BUL45D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C pin configuration transistor bd140 TRANSISTOR REPLACEMENT GUIDE BU108 Drive IC 2SC3346 Replacement MOTOROLA BDX54 2sA671 transistor BU326 BU100 transistor NSD134
PYF08A-E Abstract: PY14QN2-Y1 112467UG MY4N-CR OMRON PYF-08A-N PY08-02 PYF08A PYF14A-E relay my4n omron PY14 Text: General-purpose Relay MY New model Versatile and Function-filled Miniature Power Relay for Sequence Control and Power Switching Applications Many variations possible through a selection of operation indicators mechanical and LED indicators , test button, built-in diode and CR (surge	Original	PDF	PFP-50N/PFP-100N PFP-50N. PFP-100N2 J111-E1-1B PYF08A-E PY14QN2-Y1 112467UG MY4N-CR OMRON PYF-08A-N PY08-02 PYF08A PYF14A-E relay my4n omron PY14
MY4N-CR Abstract: MY4N-D2 OMRON MY2 220/240VaC OMRON MY2 220 MY2IN MY4N OMRON MY4 relay my2n omron omron relay my4 110/120 vac MY2N Text: General-purpose Relay MY New model Versatile and Function-filled Miniature Power Relay for Sequence Control and Power Switching Applications Many variations possible through a selection of operation indicators mechanical and LED indicators , test button, built-in diode and CR (surge	Original	PDF

fr diode 205 Abstract: diode fr 207 TFK 450 B2 41880 A751 Text: 1N 41510 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Besondere Merkmale: • Kann als gütebestätigtes Bauelem ent g e lie fe rt werden Features: • Can be de live re d as "Q ualified semico n d ucto r d e v ic e “	OCR Scan	PDF	1N41510 fr diode 205 diode fr 207 TFK 450 B2 41880 A751
MT1115 Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir	OCR Scan	PDF	108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
1N4151 Abstract: DIODE WITH SOD CASE Text: 1N4151, 1N4151W Silicon E pitax ial P la n a r Diode fast switching diode. Packages - DO-35 1N4151 - SOD-123 (ÌN 4I51W ) -Cathode Mark max. 00,52 DO-35 G lass Case Weight approx. 0.13 g Dimensions in mm ''I e min. 0.25 SOD-123 P lastic P ackage Weight approx. 0.01 g	OCR Scan	PDF	1N4151, 1N4151W DO-35 1N4151) OD-123 4I51W DO-35 OD-123 1N415I 1N4151W 1N4151 DIODE WITH SOD CASE
BAW 76 b Abstract: BAW76 Text: BAW76 Silicon planar logical diode BAW 76 is a silicon planar diode in "d o u b le heat s in k " technique in a case 56 A 2 DIN 41 883 D O -3 5 . The cathode is marked by a blue co lo u r ring. B AW 76 is particularly suitable fo r use as high-speed sw itch in com puters as w e ll as fo r general	OCR Scan	PDF	BAW76 BAW76 BAW 76 b
IN 4151 Abstract: DIODE 4151 41880 Text: E G CORP 17E D 002^421= ODG'iô'iB 4 1 N 4151 IfM e le c t ro n ic CreativeTechnologies TTdLO T -d S -O f Silicon Epitaxial Planar Diode Applications: Extreme fast switches Features: • • Also available as „Qualified semiconductor device" according to :	OCR Scan	PDF	T-03-OJ IN 4151 DIODE 4151 41880
AEG AKTIENGESELLSCHAFT Abstract: ir 0588 LL41 LL4151 aeg diode Text: i E G CORP 17E D O O S ^ S b G OÜTATB T LL4151 ìTtKUilFMKllKl electronic Creative Technologies Silicon Epitaxial Planar Diode Application: Extreme fast switches Features: • Electrical data identical with the device 1N 4151 D im e n sio n s in m m Terminals are tin plated	OCR Scan	PDF	mmx50 LL4151 10-ma AEG AKTIENGESELLSCHAFT ir 0588 LL41 LL4151 aeg diode
ZPD 5.1 ITT Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers	OCR Scan	PDF	F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	PDF	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Untitled Abstract: No abstract text available Text: Te m ic LS4151 T ELEFUN K EN Sem iconductors Silicon Epitaxial Planar Diode Features • E lectrical data id en tical w ith the d e v ic e 1N 4151 • Q uadro M e lf pack age Applications E xtrem e fast sw itc h e s I Absolute M axim um Ratings T, = 2 5 ° C	OCR Scan	PDF	LS4151
In5062 Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode Text: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149	OCR Scan	PDF	DO-35) 1N4152 1N4150 DLN914, DLN916, DLN4149 DLN4446 DLN4447 DLN4448 In5062 in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode

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DIODE 4151 Search Results

DIODE 4151 Result Highlights (5)

DIODE 4151 Datasheets Context Search

LL4151

MINI-MELF DIODE BLACK CATHODE

Untitled

Untitled

CM05B

D45H11 equivalent replacement

BU108

MJ3001 equivalent

2sC144

motorola 415 D2PAK

2SC1943

pin configuration transistor bd140

PYF08A-E

MY4N-CR

fr diode 205

MT1115

1N4151

BAW 76 b

IN 4151

AEG AKTIENGESELLSCHAFT

ZPD 5.1 ITT

la 4440 amplifier circuit diagram 300 watt

Untitled

In5062