LTC4358
Abstract: LTC4252-2A LTC4358CFE MARKING TRANSISTOR BD RC marking g02 tssop FE16 n channel mosfet marking Bc B530C LTC4358C LTC4358CDE
Text: LTC4358 5A Ideal Diode FEATURES DESCRIPTION n The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat
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LTC4358
LTC4358
14-Pin
16-Lead
LTC4355
LTC4357
LTC4223-1/LTC4223-2
4358fa
LTC4252-2A
LTC4358CFE
MARKING TRANSISTOR BD RC
marking g02 tssop
FE16
n channel mosfet marking Bc
B530C
LTC4358C
LTC4358CDE
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semikron skiip 400 gb
Abstract: semikron skiip 33 1513gb172 semikron skiip 31 semikron skiip SKIIP APPLICATION SKIIP DRIVER skiip gb 120 PX16 SKIIP 33
Text: SKiiP 1513GB172-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1513GB172-3DL
semikron skiip 400 gb
semikron skiip 33
1513gb172
semikron skiip 31
semikron skiip
SKIIP APPLICATION
SKIIP DRIVER
skiip gb 120
PX16
SKIIP 33
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semikron skiip 3
Abstract: semikron skiip 400 gb 1513GB122-3DL PX16
Text: SKiiP 1513GB122-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1513GB122-3DL
semikron skiip 3
semikron skiip 400 gb
1513GB122-3DL
PX16
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si 1125 hd
Abstract: semikron skiip 400 gb 1513GB173-3DL PX16
Text: SKiiP 1513GB173-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1513GB173-3DL
si 1125 hd
semikron skiip 400 gb
1513GB173-3DL
PX16
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Untitled
Abstract: No abstract text available
Text: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat
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LTC4358
LTC4358
14-Pin
16-Lead
LTC4355
LTC4357
LTC4223-1/LTC4223-2
4358fa
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PDF
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1513gb172
Abstract: No abstract text available
Text: SKiiP 1513GB172-3DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms
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1513GB172-3DL
1513GB172-3DL
1513gb172
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skiip gb 120
Abstract: SEMIKRON SKIIP 72 GB 12 SKIIP user
Text: SKiiP 1513GB122-3DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms
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1513GB122-3DL
1513GB122-3DL
skiip gb 120
SEMIKRON SKIIP 72 GB 12
SKIIP user
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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MTX70A
Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
Text: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35
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3s300A
ZG50HFL120C1S
SKM75GB128DN
BSM50GB120DLC
ZG75HFL120C1S
SKM100GB128DN
BSM75GB120DLC
ZG100HFL120C1S
SKM145GB128DN
BSM100GB120DLCK
MTX70A
FF300R12KS4
MOTOR SOFT START
MDS100
mfq 60A
bridge rectifier SSC
AC welder IGBT circuit
ZG300HFL120C2S
3phase bridge diode mds 60
SKM200GB125DN
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Untitled
Abstract: No abstract text available
Text: ERD24-06*ERD74-06 12a •600V • : Outline Drawings FAST RECOVERY DIODE : Features • • • X^*yKJK Glass passivated chip High reverse voltage capability. Stud mounted ■ £ )& : Applications Switching power supplies Free-wheel diode 7 Snubber diode
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ERD24-06
ERD74-06
ERD24-06,
ERD74-06
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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LD connector SC
Abstract: NX8501 NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501BC-BA NX8501BC-CA NX8501CC NX8501CC-BA
Text: 1510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE NX8501 SERIES FEATURES DESCRIPTION • PEAK WAVELENGTH: λP = 1510 nm The NX8501 Series is a 1510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The
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NX8501
NX8501
TA-NWT-000983
SMF-28
24-Hour
LD connector SC
NX8501AC
NX8501AC-BA
NX8501AC-CA
NX8501BC
NX8501BC-BA
NX8501BC-CA
NX8501CC
NX8501CC-BA
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Westcode thyristor
Abstract: WESTCODE TB R216CH12FJO 1KHZ thyristor thyristor T 95 F 700 SM12CXC190 back to back thyristor module thyristor 910 R216CH12 westcode diodes S
Text: WESTCODE SEMICONDUCTORS« »«-»» Isolated Base Power Modules Available as DOUBLE THYRISTOR, THYRISTOR/DIODE, DIODE/THYRISTOR, DOUBLE DIODE. Features compression mounted ceramic units ensuring hermeticity. Isolation 2.5KV RMS using non-hazardous materials. Integral water cooled unit available.
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151JL
Westcode thyristor
WESTCODE TB
R216CH12FJO
1KHZ thyristor
thyristor T 95 F 700
SM12CXC190
back to back thyristor module
thyristor 910
R216CH12
westcode diodes S
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7563P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7563P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.
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NDL7563P
1550nm
1550nm
NDL7563P
NDL7563P1
10-J-H
10/iS
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Untitled
Abstract: No abstract text available
Text: ERD24-06-ERD74-06I12A •600V • : Outline Drawings FAST RECOVERY DIODE : Features • Glass passivated chip • High reverse voltage capability. • Stud mounted : Applications • Sw itching power supplies • Free-wheel diode • Sn u b b e r diode •
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ERD24-06-ERD74-06I12A
ERD24-06,
ERD74-06
50HzJE
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diode bas32
Abstract: No abstract text available
Text: BAS32 _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications.
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BAS32
BAS32
OD-80
45ward
diode bas32
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LCU150588F
Abstract: No abstract text available
Text: Laser Diodes 1550nm Laser Diode 1550nm Laser Diode LCU150588F •Features Un-cooled Laser diode with MQW structure Wide operation temperature range Dew point below -40oC Both ball lens and flat window cap available ■External dimensions Unit : mm ■Absolute Maximum Ratings(Tc=25℃)
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1550nm
LCU150588F
-40oC
divers-vis/lcu/lcu150588f
LCU150588F
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DFB 2,5Gbps
Abstract: C151
Text: 1510nm 2.5Gbps DFB Laser Diode C-151-DFB2.5-E-XD-NT Features • Uncooled laser diode with MQW structure • 5mW CW operation at 0 to +70º • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode
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1510nm
C-151-DFB2
TA-NWT-000983
LUMNDS509-0703
DFB 2,5Gbps
C151
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C-151-DFB-E-XX-NT
Abstract: No abstract text available
Text: 1510nm MQW-DFB Laser Diode C-151-DFB-E-XX-NT Features • Uncooled laser diode with MQW structure • 5mW CW operation at 0 to +70ºC • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode
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1510nm
C-151-DFB-E-XX-NT
TA-NWT-000983
LUMNDS508-MAR1504
C-151-DFB-E-XX-NT
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if4g
Abstract: No abstract text available
Text: ESC021M-15 5A FAST RECOVERY DIODE : Features • s .a i4 T v , Dam per diode for high definition TV and high resolution display. Dam per and modulater diode are jointed in a body. Insulated package by fully molding. Connection Diagram High voltage by mesa design.
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ESC021M-15
l95t/R89
if4g
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5SYA2039
Abstract: 2000J170300
Text: Data Sheet, Doc. No. 5SYA 1421-01 04-2012 5SLA 2000J170300 HiPak DIODE Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2000J170300
CH-5600
5SYA2039
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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diode sg 5 ts
Abstract: No abstract text available
Text: Thyristor-Dioden-Module für l-Umrichter Thyristor-diode-modules for current source inverters Modules thyristor-diode pour convertisseurs à circuit intermédiaire à courant continu Typ V drm Type V rrm V rrm Thyr (Diode) V V / i 2d t Itrmsm Itsm A lïAVM/tc
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100Ct
TD50-N
261/Sg:
diode sg 5 ts
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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