2000J170300 Search Results

5SYA2039

Contextual Info: Data Sheet, Doc. No. 5SYA 1421-00 12-2011 5SLA 2000J170300 ABB HiPakTM Diode Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SYA2039

Abstract: 2000J170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1421-01 04-2012 5SLA 2000J170300 HiPak DIODE Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1420-01 04-2012 5SNA 2000J170300 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2000 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

abb 630

Contextual Info: Data Sheet, Doc. No. 5SYA 1421-01 04-2012 5SLA 2000J170300 ABB HiPakTM Diode Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1420-01 04-2012 5SNA 2000J170300 HiPak IGBT Module VCE = 1700 V IC = 2000 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1420-00 12-2011 5SNA 2000J170300 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2000 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance