DIODE i2t
Abstract: heat sink design guide, IGBT DIM600DCM17-A000
Text: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module DS5491-4.0 April 2003 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)
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DIM600DCM17-A000
DS5491-4
DIM600DCM17-A000
DIODE i2t
heat sink design guide, IGBT
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PDF
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DIM600DCM17-A000
Abstract: DIM600DCM17-A
Text: 16 DS5491-5 March 2011 LN26753 14 ±0.2 ±0.2 Replaces DS5491-4.2 IGBT Chopper Module 11.5 DIM600DCM17-A000 FEATURES ±0.2 • 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated AlSiC Base With AlN Substrates
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DS5491-5
LN26753)
DS5491-4
DIM600DCM17-A000
DIM600DCM17-A000
DIM600DCM17-A
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igbt v1
Abstract: No abstract text available
Text: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Preliminary Information DS5491-1.1 September 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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DIM600DCM17-A000
DS5491-1
DIM600DCM17-A000
igbt v1
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PDF
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Untitled
Abstract: No abstract text available
Text: DIM600DCM17-A000 IGBT Chopper Module DS5607- 4.1 March 2007 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Baseplate with AIN substrate High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max)
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DIM600DCM17-A000
DS5607-
LN25194)
DIM600DCM17-A000
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PDF
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DIM600DCM17-A000
Abstract: DIM600DCM17
Text: DIM600DCM17-A000 IGBT Chopper Module DS5491- 4.2 May 2007 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AIN substrate • High Thermal Cycling Capability • Lead Free construction KEY PARAMETERS
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DIM600DCM17-A000
DS5491-
LN25348)
DIM600DCM17-A000
170ty
DIM600DCM17
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PDF
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DIM600DCM17-A000
Abstract: 256068
Text: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Replaces September 2001, version DS5491-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5491-2.0 March 2002
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DIM600DCM17-A000
DS5491-1
DS5491-2
DIM600DCM17-A000
256068
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PDF
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DIM600DCM17-A000
Abstract: lm411
Text: DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5491-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5491-3.1 Octtober 2002
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DIM600DCM17-A000
DS5491-2
DS5491-3
DIM600DCM17-A00arantee
DIM600DCM17-A000
lm411
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PDF
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Untitled
Abstract: No abstract text available
Text: DIM600DCM17-A000 IGBT Chopper Module Replaces DS5491-4.2 DS5491-5 March 2011 LN26753 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
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DIM600DCM17-A000
DS5491-4
DS5491-5
LN26753)
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PDF
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Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
Tag 225-600
IGBT cross-reference
SCR GTO
fast diode 3000V
tag 200-600
522.500. 5 x 20 mm
HVDC plus
scr phase control battery charger
esm 30 450 v
GTO thyristor Application notes
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PDF
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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PDF
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DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches
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4500Vee
DS5766-4.
DCR370T
DCR370T18
DCR1560F26
DCR1560F
drd2960y40
alsic 105
DCR1710F18
DCR650G34
DCR2760V
DRD850D34
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PDF
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DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
K1457
Tag 225-600
dim1200fss12
thyratron
IGBT cross-reference
DCR890F
DSF110
igbt types 6000v
DIM800DCS12-A
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PDF
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2sd315ai
Abstract: 2sc0108t bi-directional switch IGBT driver 2SC0435T 2SD106AI 2SD106Ai-17 2sc0108 2sc0435 CT-Concept igbt trafo drivers
Text: AN 5946 Driving Dynex High Power IGBT modules with Concept Gate Drives Application Note AN5946-2.0 September 2009 LN26854 Author: Dinesh Chamund Introduction Dynex Semiconductor manufactures a variety of IGBT modules ranging from 1200V to 6500V and 100A to 2400A.
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AN5946-2
LN26854
2sd315ai
2sc0108t
bi-directional switch IGBT driver
2SC0435T
2SD106AI
2SD106Ai-17
2sc0108
2sc0435
CT-Concept
igbt trafo drivers
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PDF
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DCR2950W
Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
igbt types 6000v
igbt sinewave inverter
thyristor phase control 600v to 1600v
DCR2630Y
Tag 225-600
PT85QWX45
HVDC plus
bi-directional switches IGBT
GTO hvdc thyristor
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