transistor 2N3906 smd 2A SOT23
Abstract: BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23
Text: Contents Chips/Dice Package Outline Drawings Page # Axial Glass/Plastic Packages Package Outline Drawings Page # … Leaded Plastic Packages Chips/Dice for Diodes 2 DO-35 50 KBPC 60 Chips/Dice for Transistors 2 DO-41 50 KBPC-6 60 Products for CFL/TL Ballasts
|
Original
|
PDF
|
DO-35
DO-41
DO-15
DO-201AD
DO-41P
200mW
OD-80C
LL-34
transistor 2N3906 smd 2A SOT23
BC327-40 SMD
pin configuration transistor BC547 smd packaging
DIAC DB2
BC547 smd packaging
bd469
W04M pin configuration
A1941 C5198 application notes
D1 DB2 Diac
w33 SMD sot 23
|
Negative regulator
Abstract: RH1185 Mil-Std-883 Wire Bond Pull Method 2011 MIL-PRF38535 TM1019 RH1185MKDICE
Text: SPEC NO. 05-08-5232 REV. A RH1185MK DICE, NEGATIVE REGULATOR WITH ADJUSTABLE CURRENT LIMIT REVISION RECORD REV DESCRIPTION DATE INITIAL RELEASE 02/11/09 A RH1185MK DICE/DWF DATA SHEET AMENDED. PAGE 11, PRE-IRRADIATION ELECTRICAL TEST LIMITS CHANGED REFERENCE VOLTAGE FROM -1.1V MIN,
|
Original
|
PDF
|
RH1185MK
Negative regulator
RH1185
Mil-Std-883 Wire Bond Pull Method 2011
MIL-PRF38535
TM1019
RH1185MKDICE
|
2N7002-7-F
Abstract: 2N7002-7-04-F 2N7002DW-7-F 2n7002-7 2N7002DW ed 012GL 2007 2N7002E-7 2N7002R-02DK-7 2N7002E-7-F 2N7002W-7-F
Text: PRODUCT CHANGE NOTICE DCS/PCN-1070 Contact Date: Implementation Date: Alert Category: Alert Type: April 13, 2007 July 13, 2007 Discrete Semiconductor Alternate PCN #: PCN #: 1070 TITLE Alternate Dice Qualified IMPACT Expanded output DESCRIPTION OF CHANGE Alternate dice have successfully completed High Reliability testing and device qualification.
|
Original
|
PDF
|
DCS/PCN-1070
2N7002-13-01
2N7002-01-7
2N7002-7-13
2N7002-13-F
2N7002-7
2N7002-7-04
2N7002-7-04-F
2N7002-7-F
2N7002DW-13
2N7002-7-F
2N7002-7-04-F
2N7002DW-7-F
2n7002-7
2N7002DW
ed 012GL 2007
2N7002E-7
2N7002R-02DK-7
2N7002E-7-F
2N7002W-7-F
|
Untitled
Abstract: No abstract text available
Text: NM1-2012PWC4-01 Feature ◆ ◆ ◆ ◆ Viewing angle:140 deg The materials of the LED dice is InGaN 2.00mmx1.25mm×0.70mm SMT-LED RoHS compliant lead-free soldering compatible RESIN: EPOXY BONDING WIRE:Φ2 Package Outline LED DICE 2.00 [0.08] PRINTED CIRCUIT BOARD: BT
|
Original
|
PDF
|
NM1-2012PWC4-01
004inch)
Width10msec.
W02003
|
w13002
Abstract: 03352 W1-300
Text: NM1-3216TWC4-01 Feature ◆ ◆ ◆ ◆ Viewing angle:140 deg The materials of the LED dice is InGaN/GaN 3.20mmx1.60mm×0.70mm SMT-LED RoHS compliant lead-free soldering compatible Package Outline RESIN: EPOXY BONDING WIRE:Φ25um Au LED DICE 1 2 PRINTED CIRCUIT BOARD: BT
|
Original
|
PDF
|
NM1-3216TWC4-01
004inch)
W13002
Width10msec.
w13002
03352
W1-300
|
pin configuration transistor BC547 smd packaging
Abstract: BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe
Text: Quick Reference Data Chip/Dice – Diffused Silicon Wafers Surface Mount Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors
|
Original
|
PDF
|
DO-35
DO-41
C-120
0406-3K
pin configuration transistor BC547 smd packaging
BC547 smd packaging
BD469
C2N3904
c5198
CMJE2955T
transistor mcr100-8
BC337 TO-92 Generic
DIAC DB2
BC337 hie hre hfe
|
TRANSISTOR BC337 SMD
Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices
|
Original
|
PDF
|
MPSA45
P2N2369
PN2222
MPSA05
MPSA55
P2N2369A
PN2222A
MPS2907A
MPSA06
MPSA56
TRANSISTOR BC337 SMD
transistor BC170
C5198
CDIL 2N2222A Transistor
bd139 smd
bc337 SMD PACKAGE
bd140 SMD equivalent
BC109 BC184 BC549
a1941
CDIL BD139
|
Untitled
Abstract: No abstract text available
Text: NM1-PPP1-01 Package outlines RECOMMEND PAD LAYOUT G O B ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES ITEM MATERIALS Resin Epoxy Bonding Wire Ø 25 µm Au Lens color Water transparent Dice InGaN Emitted color Blue AlInGaN AlGaInP
|
Original
|
PDF
|
NM1-PPP1-01
008inch)
Width10msec.
|
TPV597
Abstract: 1n4007 mttf linear amplifier 470-860 MOTOROLA POWER TRANSISTOR 1N4007 2N2904 470 860 mhz application note case 244-04
Text: MOTOROLA Order this document by TPV597/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TPV597 . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance
|
Original
|
PDF
|
TPV597/D
TPV597
TPV597/D*
TPV597
1n4007 mttf
linear amplifier 470-860
MOTOROLA POWER TRANSISTOR
1N4007
2N2904
470 860 mhz application note
case 244-04
|
RF-WNRA30DS-FF
Abstract: RF-WNRA30DS JESD22-A101 JESD22-A103 JESD22-A108 JESD22-A119 JESD22-B106 38spec
Text: Feature RF-WNRA30DS-FF Viewing angle:120 deg The materials of the LED dice is InGaN 3.50mmx2.80mm×1.90mm RoHS compliant lead-free soldering compatible ◆ ◆ ◆ ◆ Package Outline 2 1 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES
|
Original
|
PDF
|
RF-WNRA30DS-FF
008inch)
WI-E-045
RF-WNRA30DS-FF
RF-WNRA30DS
JESD22-A101
JESD22-A103
JESD22-A108
JESD22-A119
JESD22-B106
38spec
|
Untitled
Abstract: No abstract text available
Text: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711
|
OCR Scan
|
PDF
|
ZTX653
ZTX453
2N1893
ZTX652
ZTX452
MPSA06
ZTX651
ZTX451
BFY50
2N1613
|
2N2369D
Abstract: No abstract text available
Text: S EM IC O N D U C TO R DICE We offer a wide range of Planar, Discrete semiconductor dice covering popular Bipolar and M O SFET products. Bipolar transistors : (diodes): Small Signal, Medium Power, Sw itching, High Voltages, Darlingtons etc. Zeners 2V 7 to 47V , Sw itching (single and duals), Low
|
OCR Scan
|
PDF
|
2N2369W
2369D
2N2369D
2N2369DW
|
BC548C
Abstract: BC107A BC108A BC108b ZTX301
Text: SEM ICO N D U CTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO h FE ^CBO V CE sat! at Dice type Min. Min. Wax. at VCB VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C
|
OCR Scan
|
PDF
|
BC546A
BC546B
ZTX304
BCY65EA
BC182
BC107A
BC107B
BC237
BC547A
BC547B
BC548C
BC108A
BC108b
ZTX301
|
bcv59
Abstract: N705 bcv-59 ZTX301
Text: ’ ZETEX SEMICONDUCTORS IbE D • =1170570 000b675 0 ■ ZETB ' SEM IC O N D U C T O R DICE ELECTRICAL C H A RA C TERIST ICS NPN SM A LL SIGNAL TRA N SISTO R S Dice type- BC546A BC546B ZT X304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC547B BC550B BC550C
|
OCR Scan
|
PDF
|
000b675
BC546A
BC546B
BCY65EA
BC182
BC107A
BC107B
BC237
BC547A
BC547B
bcv59
N705
bcv-59
ZTX301
|
|
BC307A
Abstract: BC308B BC212A BC212B BC307B BC556A BC556B BC557A BCY77A BCY77B
Text: ELECTRICAL CHARACTERISTICS a TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P. SMALL SIGNAL TRANSISTORS hpE Dice Type BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC557A BC557B BCY70 BCY79A BCY79B BCY79C BCY71 2N3905 2N3906 BC213A BC213B BC213C
|
OCR Scan
|
PDF
|
BC556A
BC556B
BCY77A
BCY77B
BCY77C
BC212A
BC212B
BC307A
BC307B
BC558B
BC308B
BC557A
|
vp11a
Abstract: No abstract text available
Text: VP11A inc. /p \ P-Channel Enhancement-Mode ^ Vertical DMOS FETs Ordering Information Standard Commercial Devices BV T / p Order Number / Package BV DGS max (min) TO-39 TO-220 DICE+ -60V 2n -5A VP1106N2 VP1106N5 VP1106ND -100V 2£2 -5A VP1110N2 VP1110N5 VP1110ND
|
OCR Scan
|
PDF
|
-100V
VP11A
VP1106N2
VP1110N2
O-220
VP1106N5
VP1110N5
VP1106ND
VP1110ND
vp11a
|
m 60 n 03 g10
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60
|
OCR Scan
|
PDF
|
7057fl
2N2907A
2N2907
BCY70
BCY71
BCY72
2N4403
m 60 n 03 g10
|
2N2223
Abstract: 2N2060 Ferranti Semiconductors BS9300 "dual TRANSISTORs" 2N2223A C479 ZDT40 ZDT41 ZDT42
Text: SEMICONDUCTOR NETWORKS Ferranti semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, Ferranti offer a custom -build engineering service to
|
OCR Scan
|
PDF
|
2N2060
BS9300
2N2223
2N2223A
ZDT40
ZDT41
ZDT42
ZDT44
ZDT45
Ferranti Semiconductors
"dual TRANSISTORs"
C479
ZDT40
ZDT41
|
SILICON SMALL-SIGNAL DICE
Abstract: No abstract text available
Text: MOTOROLA SC {D IO DES /OPTO} 34 SILICON SMALL-SIGNAL TRANSISTOR DICE continued D I b3fc725S D037TÌD 34C 37990 T- 3 7 " ( S ' 2C3762 DIE NO. — PNP LINE SOURCE — DSL60 This die provides performance similar to that of the following device types: (SÌ 2N3762
|
OCR Scan
|
PDF
|
b3fc725S
D037T
DSL60
2C3762
2N3762
2N3763
2N3764
2N3765
SILICON SMALL-SIGNAL DICE
|
BCY58C
Abstract: bc547b ferranti BCY59A bcy59b 2N3903 2N3904 BC107A BC107B BC182 BC237A
Text: ELECTRICAL CHARACTERISTICS N.P.N. SM ALL SIG N AL TR A N SISTO RS hFE VcBO V ceo ICBO @ Min. Min. Max.atVcs lc Dice Type V V nA V Min. Max. mA BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BC547A BC547B BC550B BC550C BCY59A BCY59B BCY59C
|
OCR Scan
|
PDF
|
BC546A
BC546B
BCY65EA
BC182
2N3903
2N3904
BC107A
BC107B
BC237A
BC237B
BCY58C
bc547b ferranti
BCY59A
bcy59b
|
BC238
Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B
Text: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301
|
OCR Scan
|
PDF
|
BC546A
BC546B
ZTX304
BCY65EA
BC182
BC107A
BC107B
BC237
BC547A
BC548B
BC238
BCY59A
ZTX302
|
N222
Abstract: 2N2060 2N2223 ZDT40 "dual TRANSISTORs" Ferranti Semiconductors ZDT41 ZDT42 ZDT44 ZDT45
Text: SEMICONDUCTOR NETWORKS Ferranti semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, Ferranti offer a c u sto m -b u ild e n gineering
|
OCR Scan
|
PDF
|
2N2060
BS9300C479
ZDT45
N2060
2N2223
N2223A
ZDT40
ZDT41
ZDT42
ZDT44
N222
ZDT40
"dual TRANSISTORs"
Ferranti Semiconductors
ZDT41
|
Fairchild, 2N3019
Abstract: 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild DN3904 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor
Text: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN AND PNP TRANSISTOR DICE BY APPLICATION Item DEVICE NO. Basic VcEO 'CBO @ VcB hFE @ ic V V Standard nA mA Pol. Device Min Max Min/Max 1 DN2484 NPN 2N2484 60 20 45 250/100/450 2 DN3962 PNP 2N3962 60 20 50 3 DN918 NPN
|
OCR Scan
|
PDF
|
DN2484
2N2484
DN3962
2N3962
11x24
DN918
2N918
DN3904
2N3904
11x18
Fairchild, 2N3019
2N3906 NPN Fairchild
DN2222A
transistor 2N2359A
fairchild 2n3019
2n2222a fairchild
2N2907 NPN Transistor
2n3904 npn fairchild
2N3904 NPN Transistor
|
BC337B
Abstract: m 60 n 03 g10 BC327C
Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA
|
OCR Scan
|
PDF
|
ZTX653
ZTX453
2N1893
ZTX652
ZTX452
MPSA06
ZTX651
ZTX451
BFY50
2N1613
BC337B
m 60 n 03 g10
BC327C
|