Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DFM900FXS12 Search Results

    DFM900FXS12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DFM900FXS12-A000 Fast Recovery Diode Module DS5846-1.0 June. 2005 LN23946 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Dual Diodes Can be paralleled for 1800A Rating •


    Original
    DFM900FXS12-A000 DS5846-1 LN23946) DFM900FXS12-A000 PDF

    DFM900FXS12-A000

    Abstract: DFM900FXS12-A mj 13005 transistor 13005 DFM900FXS12
    Text: DFM900FXS12-A000 Fast Recovery Diode Module Replaces DS5846-2 DS5846-3 October 2010 LN27659 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated Cu Base with Al2O3 Substrates


    Original
    DFM900FXS12-A000 DS5846-2 DS5846-3 LN27659) DFM900FXS12-A000 DFM900FXS12-A mj 13005 transistor 13005 DFM900FXS12 PDF

    DFM900FXS12-A000

    Abstract: No abstract text available
    Text: DFM900FXS12-A000 Fast Recovery Diode Module Replaces DS5846-1.1 DS5846-2 April 2010 LN26761 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated Cu Base with Al2O3 Substrates


    Original
    DFM900FXS12-A000 DS5846-1 DS5846-2 LN26761) DFM900FXS12-A000 PDF

    DFM900FXS12-A000

    Abstract: LOW LOSS FAST RECOVERY DUAL DIODES
    Text: DFM900FXS12-A000 Fast Recovery Diode Module DS5846-1.1 June 2007 LN25318 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Dual Diodes Can be paralleled for 1800A Rating •


    Original
    DFM900FXS12-A000 DS5846-1 LN25318) DFM900FXS12-A000 LOW LOSS FAST RECOVERY DUAL DIODES PDF

    Untitled

    Abstract: No abstract text available
    Text: DFM900FXS12-A000 Fast Recovery Diode Module Replaces DS5846-2 DS5846-3 October 2010 LN27659 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated Cu Base with Al2O3 Substrates


    Original
    DFM900FXS12-A000 DS5846-2 DS5846-3 LN27659) DFM900FXS12-A000 PDF

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original
    DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes PDF

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original
    DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor PDF

    DCR370T

    Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches


    Original
    4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34 PDF

    DCR2950W

    Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original
    DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A PDF

    DCR2950W

    Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original
    DS5766-4. DCR2950W igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor PDF