Untitled
Abstract: No abstract text available
Text: APT30GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)30 Absolute Max. Power Diss. (W)147 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case850m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.
|
Original
|
PDF
|
APT30GL100BN
Junc-Case850m
delay40n
time130n
time675n
|
Untitled
Abstract: No abstract text available
Text: APT45GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)45 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case625m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.
|
Original
|
PDF
|
APT45GL100BN
Junc-Case625m
delay40n
time130n
time675n
|
Untitled
Abstract: No abstract text available
Text: APT65GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)65 Absolute Max. Power Diss. (W)245 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case.51 Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.
|
Original
|
PDF
|
APT65GL100BN
delay40n
time130n
time675n
|
Untitled
Abstract: No abstract text available
Text: APT25GF100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)25 Absolute Max. Power Diss. (W)147 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case850m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.
|
Original
|
PDF
|
APT25GF100BN
Junc-Case850m
delay40n
time130n
time450n
|