IEC61215
Abstract: IEC61646 micro solar inverters circuit diagram 1740658-1 Solar PV connector 114-74013 solar cable 486A-B 2Pfg1169 3M Philippines
Text: RoHS Ready SOLARLOK Photovoltaic Interconnection System SOLARLOK Photovoltaic Interconnection System Catalog 889753-3 Revised 9-2009 Table of Contents The SOLARLOK Concept . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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IEC61646
Abstract: 114-74013 1954381-2 Photovoltaic coupler IEC61215 1394462-3 1740658-1 18701 1954381-1 photovoltaic module
Text: RoHS Ready SOLARLOK Photovoltaic Interconnection System SOLARLOK Photovoltaic Interconnection System Catalog 889753-3 Revised 9-2009 Table of Contents The SOLARLOK Concept . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Si3493BDV
Abstract: Si3493DV Si3493BDV-T1-E3 Si3493DV-T1 Si3493DV-T1-E3
Text: Specification Comparison Vishay Siliconix Si3493BDV vs. Si3493DV Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET TSOP-6 Identical Part Number Replacements Si3493BDV-T1-E3 Replaces Si3493DV-T1-E3 Si3493BDV-T1-E3 Replaces Si3493DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si3493BDV
Si3493DV
Si3493BDV-T1-E3
Si3493DV-T1-E3
Si3493DV-T1
22-Feb-07
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5102 mosfet
Abstract: No abstract text available
Text: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT
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SUD50N025-4m5P
O-252
SUD50N025-4m5P-E3
11-Mar-11
5102 mosfet
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Untitled
Abstract: No abstract text available
Text: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT
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SUD50N025-4m5P
O-252
SUD50N025-4m5P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SN54AHCT138, SN74AHCT138 3-LINE TO 8-LINE DECODERS/DEMULTIPLEXERS SCLS266L – DECEMBER 1995 – REVISED SEPTEMBER 2002 15 3 14 4 13 5 12 6 11 7 10 8 9 B C G2A G2B G1 Y7 16 B A NC VCC Y0 1 SN54AHCT138 . . . FK PACKAGE TOP VIEW C G2A NC G2B G1 15 Y0 14 Y1
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SN54AHCT138,
SN74AHCT138
SCLS266L
000-V
A114-A)
A115-A)
SN54AHCT138
AHCT138
SN74AHCT138PWR
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Untitled
Abstract: No abstract text available
Text: SUD50N025-4m5P Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, d 0.0045 at VGS = 10 V 50 0.0060 at VGS = 4.5 V 50 VDS (V) 25 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 36.25 nC COMPLIANT
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SUD50N025-4m5P
O-252
SUD50N025-4m5P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SIA912DJ-T1-GE3
Abstract: SC-70-6 74953
Text: New Product SiA912DJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.040 at VGS = 4.5 V 4.5 0.048 at VGS = 2.5 V 4.5 0.063 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhaced PowerPAK®
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SiA912DJ
SC-70
SC-70-6
SiA912DJ-T1-GE3
11-Mar-11
74953
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Si7160DP
Abstract: 74954 si7160 A4466
Text: Si7160DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0087 at VGS = 10 V 20 0.010 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 21 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 S 3 APPLICATIONS G 4 • Notebook
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Si7160DP
Si7160DP-T1-E3
11-Mar-11
74954
si7160
A4466
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SIA914
Abstract: SC-70-6 SIA914DJ
Text: New Product SiA914DJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.053 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 0.077 at VGS = 1.8 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA914DJ
SC-70
SC-70-6
SiA914DJ-T1-GE3
11-Mar-11
SIA914
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Untitled
Abstract: No abstract text available
Text: New Product SiA912DJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.040 at VGS = 4.5 V 4.5 0.048 at VGS = 2.5 V 4.5 0.063 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhaced PowerPAK®
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SiA912DJ
SC-70
SC-70-6
SiA912DJ-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiA914DJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.053 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 0.077 at VGS = 1.8 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA914DJ
SC-70
SC-70-6
SiA914DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI7160DP
Abstract: No abstract text available
Text: Si7160DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0087 at VGS = 10 V 20 0.010 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 21 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 S 3 APPLICATIONS G 4 • Notebook
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Si7160DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA914DJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.053 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 0.077 at VGS = 1.8 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA914DJ
SC-70
SC-70-6
SiA914DJ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiA912DJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.040 at VGS = 4.5 V 4.5 0.048 at VGS = 2.5 V 4.5 0.063 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhaced PowerPAK®
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SiA912DJ
SC-70
SC-70-6
SiA912DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SC-70-6
Abstract: 74957
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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SiA810DJ
SC-70
SC-70-6
11-Mar-11
74957
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sc-70 6l package k1 marking code
Abstract: No abstract text available
Text: New Product SiA914DJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.053 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 0.077 at VGS = 1.8 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA914DJ
SC-70
SC-70-6
SiA914DJ-T1-GE3
11-Mar-11
sc-70 6l package k1 marking code
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Untitled
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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SiA810DJ
SC-70
SC-70-6
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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SiA810DJ
SC-70
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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amd elan sc400
Abstract: tme86 amd elan sc520 AM486DX 80C186 Microsoft Am486 Am486DX SQFP 80C186 SC300 SC400
Text: E86 FAMILY 32-Bit Microprocessors www.amd.com 3 Le ve ra g e t h e b i l l i o n s o f dollars spent annually d e ve l o p i n g h a rd w a re a n d s o f t w a re f o r t h e w o r l d ' s d o m i n a n t p ro c e s s o r a r c h i t e c t u re — x 8 6
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32-Bit
16-bit
Am5x86,
Am386
Am486
FusionE86
WHI-3M-8/99-0
2657A
amd elan sc400
tme86
amd elan sc520
AM486DX
80C186 Microsoft
Am486DX SQFP
80C186
SC300
SC400
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Untitled
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free
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SiA810DJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Am186Ex
Abstract: AM186TMES-40 AM186CC-ISDNTA-KIT "USB" peripheral
Text: E86 FAMILY 16-Bit Microcontrollers www.amd.com 3 Le ve ra g e t h e b i l l i o n s o f dollars spent annually d e ve l o p i n g h a rd w a re a n d s o f t w a re f o r t h e w o r l d ' s d o m i n a n t p ro c e s s o r a r c h i t e c t u re — x 8 6
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16-Bit
32-bit
E86TM
80C186
E86Mon,
Am186
FusionE86
Am186Ex
AM186TMES-40
AM186CC-ISDNTA-KIT
"USB" peripheral
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jtag debugger sc520
Abstract: 32-Bit Microprocessors dx4 208 SQFP uforCE sc520 amd
Text: E86 FAMILY 32-Bit Microprocessors www.amd.com 3 Le ve ra g e t h e b i l l i o n s o f dollars spent annually d e ve l o p i n g h a rd w a re a n d s o f t w a re f o r t h e w o r l d ' s d o m i n a n t p ro c e s s o r a r c h i t e c t u re — x 8 6
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32-Bit
16-bit
E86TM
Am386®
Am486®
Am5x86,
Am386
jtag debugger sc520
32-Bit Microprocessors
dx4 208 SQFP
uforCE
sc520 amd
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Untitled
Abstract: No abstract text available
Text: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET
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Si3879DV
2002/95/EC
Si3879DV-T1-E3
Si3879DV-T1l
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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