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Vishay Siliconix SI3493DV-T1-E3 MOSFET P-CH 20V 5.3A 6TSOP
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DigiKey	SI3493DV-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI3493DV-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.78	Get Quote
Vishay Siliconix SI3493DV-T1-GE3 MOSFET P-CH 20V 5.3A 6TSOP
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DigiKey	SI3493DV-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI3493DV-T1-E3
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Bristol Electronics	SI3493DV-T1-E3		2,762			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI3493DV-T1-E3		2,209			1 $1.56 10 $1.56 100 $1.56 1000 $0.624 10000 $0.546	Buy Now
Component Electronics, Inc	SI3493DV-T1-E3		920			1 $1.54 10 $1.54 100 $1.15 1000 $1 10000 $1	Buy Now
Vishay Intertechnologies SI3493DV-T1 5300 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI3493DV-T1		1,815			1 $0.75 10 $0.75 100 $0.75 1000 $0.3125 10000 $0.3125	Buy Now
Vishay Draloric SI3493DV-T1 5300 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI3493DV-T1		699			1 $0.75 10 $0.75 100 $0.75 1000 $0.3125 10000 $0.3125	Buy Now

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SI3493DV Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI3493DV		Vishay Siliconix	P-Channel 20-V (D-S) MOSFET		Original	PDF
Si3493DV SPICE Device Model		Vishay	P-Channel 20-V (D-S) MOSFET		Original	PDF
SI3493DV-T1		Vishay Siliconix	P-Channel 20-V (D-S) MOSFET		Original	PDF
SI3493DV-T1-E3		Vishay Siliconix	P-Channel 20-V (D-S) MOSFET		Original	PDF
SI3493DV-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.3A 6-TSOP		Original	PDF
SI3493DV-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.3A 6-TSOP		Original	PDF

SI3493DV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si3493DV 2002/95/EC Si3493DV-T1-E3 Si3493DV-T1-GE3 93xxx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Si3493DV Abstract: Si3493DV-T1 Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance	Original	PDF	Si3493DV Si3493DV-T1 Si3493DV-T1--E3 93xxx S-41796--Rev. 04-Oct-04
Untitled Abstract: No abstract text available Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si3493DV 2002/95/EC Si3493DV-T1-E3 Si3493DV-T1-GE3 93xxx 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si3493DV Abstract: No abstract text available Text: Si3493DV New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.027 @ VGS = -4.5 V -7 0.035 @ VGS = -2.5 V - 6.2 0.048 @ VGS = -1.8 V - 5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance	Original	PDF	Si3493DV S-22122--Rev. 25-Nov-02
Si3493DV Abstract: Si3493DV-T1 marking code vishay SILICONIX 93xxx Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance	Original	PDF	Si3493DV Si3493DV-T1 Si3493DV-T1--E3 93xxx 18-Jul-08 marking code vishay SILICONIX 93xxx
Si3493DV Abstract: AN609 Text: Si3493DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si3493DV AN609 25-Aug-05
93XXX Abstract: SI3493DV Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si3493DV 2002/95/EC Si3493DV-T1-E3 Si3493DV-T1-GE3 93xxx 11-Mar-11 93XXX
Si3493DV Abstract: No abstract text available Text: SPICE Device Model Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3493DV 18-Jul-08
93XXX Abstract: SI3493DV Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance	Original	PDF	Si3493DV Si3493DV-T1 Si3493DV-T1--E3 93xxx 08-Apr-05 93XXX
SI3493DV Abstract: No abstract text available Text: Si3493DV New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.027 @ VGS = -4.5 V -7 0.035 @ VGS = -2.5 V - 6.2 0.048 @ VGS = -1.8 V - 5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance	Original	PDF	Si3493DV S-21313--Rev. 05-Aug-02
Si3493DV Abstract: No abstract text available Text: SPICE Device Model Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3493DV S-50836 16-May-05
Si3493DV Abstract: Si3493DV-T1-E3 93XXX Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si3493DV 2002/95/EC Si3493DV-T1-E3 Si3493DV-T1-GE3 93xxx 18-Jul-08 93XXX
Si3493BDV Abstract: Si3493DV Si3493BDV-T1-E3 Si3493DV-T1 Si3493DV-T1-E3 Text: Specification Comparison Vishay Siliconix Si3493BDV vs. Si3493DV Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET TSOP-6 Identical Part Number Replacements Si3493BDV-T1-E3 Replaces Si3493DV-T1-E3 Si3493BDV-T1-E3 Replaces Si3493DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	PDF	Si3493BDV Si3493DV Si3493BDV-T1-E3 Si3493DV-T1-E3 Si3493DV-T1 22-Feb-07
Si3493DV Abstract: 93xxx Si3493DV-T1 Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance	Original	PDF	Si3493DV Si3493DV-T1 Si3493DV-T1--E3 93xxx 93xxx

SI2333DS-T1-E3 Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)	Original	PDF	SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Siliconix Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123	Original	PDF	2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	PDF	Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8