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    SIA810DJ Price and Stock

    Vishay Siliconix SIA810DJ-T1-E3

    MOSFET N-CH 20V 4.5A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA810DJ-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.29524
    		Buy Now
    SIA810DJ-T1-E3 Cut Tape 1
    • 1 $1.17
    • 10 $1.17
    • 100 $1.17
    • 1000 $1.17
    • 10000 $1.17
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    SIA810DJ-T1-E3 Digi-Reel 1
    • 1 $1.17
    • 10 $1.17
    • 100 $1.17
    • 1000 $1.17
    • 10000 $1.17
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    Vishay Siliconix SIA810DJ-T1-GE3

    MOSFET N-CH 20V 4.5A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA810DJ-T1-GE3 Reel
    • 1 -
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    Vishay Intertechnologies SIA810DJ-T1-GE3

    Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA810DJ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA810DJ-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.3321
    		Buy Now

    SIA810DJ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA810DJ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 4.5A SC-70-6 Original PDF
    SIA810DJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 4.5A SC70-6 Original PDF

    SIA810DJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8276 m

    Abstract: AN609 power MOSFET spice model
    Text: SiA810DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SiA810DJ AN609 03-May-07 8276 m power MOSFET spice model

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


    Original     		PDF SiA810DJ SC-70 SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SC-70-6

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


    Original     		PDF SiA810DJ SC-70 SC-70-6 08-Apr-05

    SC-70-6

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


    Original     		PDF SiA810DJ SC-70 SC-70-6 18-Jul-08

    SC-70-6

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) rDS(on) (Ω) 20 • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		PDF SiA810DJ SC-70 SC-70-6 08-Apr-05

    SC-70-6

    Abstract: 74957
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


    Original     		PDF SiA810DJ SC-70 SC-70-6 11-Mar-11 74957

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


    Original     		PDF SiA810DJ SC-70 SC-70-6 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free


    Original     		PDF SiA810DJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SiA810DJ 18-Jul-08

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    SiB431EDK

    Abstract: No abstract text available
    Text: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,


    Original     		PDF LLP1010-6L LLP75-6L VEMI45AC-HNH VEMI65AC-HCI LLP2513-13L VEMI85AC-HGK LLP1713-9L LLP3313-17L SiB431EDK

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3