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    DATASHEET FOR IRF640 Datasheets Context Search

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    IRF640

    Abstract: SiHF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB 11-Mar-11 PDF

    IRF640 applications note

    Abstract: IRF640 circuit
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IRF640 applications note

    Abstract: IRF640 circuit IRF640 n-channel MOSFET
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit IRF640 n-channel MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IRFS640A

    Abstract: IRFS640
    Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF640B/IRFS640B O-220F IRFS640B FP001 IRFS640A IRFS640 PDF

    IRF640A

    Abstract: MOSFET IRF640A OC139
    Text: IRF640A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.18 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original     		IRF640A O-220 IRF640A MOSFET IRF640A OC139 PDF

    irf640b

    Abstract: No abstract text available
    Text: IRF640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRF640B irf640b PDF

    IRF640B

    Abstract: irfs640b IRF series
    Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF640B/IRFS640B IRF640B irfs640b IRF series PDF

    linear applications of power MOSFET IRF640

    Abstract: power MOSFET IRF640 IRF640 applications note for irf640 irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640 RF1S640SM
    Text: IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		IRF640, RF1S640, RF1S640SM TA17422. linear applications of power MOSFET IRF640 power MOSFET IRF640 IRF640 applications note for irf640 irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640 RF1S640SM PDF

    irf640* spice

    Abstract: AN609 IRF640 SiHF640
    Text: IRF640_RC, SiHF640_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRF640 SiHF640 AN609, 12-Mar-10 irf640* spice AN609 PDF

    7438

    Abstract: IRF640S SiHF640S AN609 IRF640L irf640* spice
    Text: IRF640S_RC, IRF640L_RC, SiHF640S_RC, SiHF640L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		IRF640S IRF640L SiHF640S SiHF640L AN609, 12-Mar-10 7438 AN609 irf640* spice PDF

    MOSFET 640N

    Abstract: TO-262 MOSFET IRF640N IRF640NS 640N IRF640NL irf640* spice
    Text: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		IRF640N/IRF640NS/IRF640NL O-263 O-220 O-262 100oC, 10opment. MOSFET 640N TO-262 MOSFET IRF640N IRF640NS 640N IRF640NL irf640* spice PDF

    MOSFET 640N

    Abstract: IRF640NS irf640* spice irf640n circuit using irf640n
    Text: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		IRF640N/IRF640NS/IRF640NL O-263 O-262 O-220 100oC, MOSFET 640N IRF640NS irf640* spice irf640n circuit using irf640n PDF

    irf640

    Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640FP • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET PDF

    irf640

    Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm PDF

    power MOSFET IRF640 fp

    Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
    Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V DSS R DS on ID IRF640 IRF640FP 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A • ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF640 IRF640FP O-220/TO-220FP O-220 power MOSFET IRF640 fp irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220 PDF

    IRF640

    Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco PDF

    irf640

    Abstract: IRF640FP IRF640 P CHANNEL MOSFET
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150« - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V IR F 6 4 0 IR F 6 4 0 F P dss 200 V 200 V R D S o n Id < 0.1 8 Q. < 0.1 8 Q. 18 A 18 A . TYPICAL Ros(on) =0.1 50 £1 . EXTREMELY H IG H dV /dt CAPABILITY . VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		IRF640 IRF640FP O-220/TO-220FP IRF640/FP O-22QFP PDF