DATA SHEET IC P 531 Search Results

bsx63

Abstract: BSX62
Contextual Info: 1. • bb-53131 0 D 2 ? m M 712 ■ APX P h ilip s S e m ic o n d u c to rs Data sheet status Preliminary specification date of issue June 1992 BSX62-10, -16/BSX63-10, -16 Silicon planar epitaxial transistors N ANER PHILIPS/DISCRETE bTE D QUICK REFERENCE DATA

Contextual Info: L.h.53‘131 0 0 2 5 4 ^ Dflb H A P X Philips Semiconductors BSP107 Data sheet status P r e lim in a r y s p e c if ic a t io n date of issue A p r il 1 9 9 1 N-channel enhancem ent mode vertical D-M O S transistor N AUER PHILIPS/D ISCRETE FEATURES PIN CONFIGURATION

bss100 transistor

Abstract: BSS100 PINNING-TO-92 JZSS773
Contextual Info: Philips C o m po nents Data sheet status P ro d u c t sp e cific a tio n data of issue N ov em b er 1990 FEATURES BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA • Direct interface to C-M O S, TTL, etc. SYM BOL

Contextual Info: DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUITS iiP B 1 5 0 6 G V , ¿ P B 1 5 0 7 G V 3GHz INPUT DIVIDE BY 256, 128, 64 PRESCALER IC FOR ANALOG DBS TUNERS The ¿¿PB1506GV and ¿¿PB1507GV are 3.0 GHz input, high division silicon prescaler ICs for analog DBS tuner

Contextual Info: i N AF1ER P H I L I P S / D I S C R E T E U C V C LU riV IC IN I 2 5E D bt.53T31 0 Q 2 2 4 5 3 U r t I rt 4 m BYR34 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. 7 ^ 6 3 -/ 9 J K. ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES

Contextual Info: OP-215/883 DUAL PRECISION JFET-IN PU T OPERATIONAL AMPLIFIER P r e c is io n M o n o lit h ic s Inc. 1.0 SCOPE This specification covers the detail requirements for a dual precision JFET input operational amplifier. It is highly recommended that this data sheet be used as a baseline for new military or

LT 543 IC detail

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD42S4210, 424210 4 M -B IT DYNAMIC RAM 256K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description T h e /iP D 4 2 S 4 2 lO , 424210 are 2 62 ,144 w o rd s by 16 bits C M O S dyn a m ic R A M s w ith o p tio nal h y p e r page m ode

HXD BUZZER

Abstract: IKC 913 wens 840
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUI /¿ P D 7 8 P 0 7 Í 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION Th e fiP D 7 8 P 0 7 8 is a m em b er o f th e |iP D 7 8 0 7 8 S u bseries o f th e 7 8K /0 S e ries, in w h ic h th e o n -c h ip m ask ROM of the ;iP D 7 8 0 7 8 is repla ced w ith a one -tim e PR O M o r EP R O M .

D7806

Abstract: 7 segment display 10 pin LTS 543 details BR50M tic 2360
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUI _4iPD78062Y,78063Y,78064> 8-BIT SIN G LE-C H IP M IC R O C O N T R O LLER S D ESC R IPTIO N T h e jiP D 7 8 0 6 2 Y / 7 8 0 6 3 Y / 7 8 0 6 4 Y a r e p ro d u cts fn w h ich th e P C b u s control fu nction is a d d e d to the tx P D 7 80 62 /7 80 63 ,'

ENCODER OPTICAL 5310

Abstract: ENCODER 5310
Contextual Info: Data Sheet NSE-5310 Miniature Position Encoder SOIC with Zero Reference and I²C Output 2 Key Features 1 General Description Direct digital output using I²C protocol The TRACKER NSE-5310 is an incremental position sensor with onchip encoding for direct digital output. A Hall element array on the

ENCODER OPTICAL 5310

Abstract: PWM controller 5310 MC-31MB NSE-5310 hall sensor 4 pins 3f ReComa28 trk-1t02 Rotary KEY I2C A-8141 40um
Contextual Info: Data Sheet NSE-5310 Miniature Position Encoder SOIC with Zero Reference and I²C Output 1 General Description 2 Key Features Direct digital output using I²C protocol The TRACKER NSE-5310 is an incremental position sensor with onchip encoding for direct digital output. A Hall element array on the

OHT11

Abstract: long range transmitter receiver circuit inpu HFBR-5303 HFBR-5315 HFBR-5305
Contextual Info: Preliminary Data Sheet | -W kn1 H E W L E T T -\¡H ÍM P A C K A R D 500 to 1500 Mbps - 850 nm <:i VCSEL Transceiver in Low Cosk 1x9 Package Style HFBR-5315 Preliminary Data Preliminary Product Disclaimer

Contextual Info: 1 N AMER PHILIPS/DISCRETE OLE D • ^53131 0D1S047 S ■ D E V E L O P M E N T DATA MRB11080Y This data sheet contains advance information and specifications are subject to change without notice. _ J V T " 3 3 - IS" PULSED MICROWAVE POW ER TRANSISTOR

MAB8048

Abstract: PCD3315AP PCD3315AT PCD33XXA
Contextual Info: 1^53124 QQTTISE 732 « S I C 3 Philips Semiconductors Single-chip 8-bit Telecom Microcontroller Preliminary specification PCD3315A N A PC/PHIL IPS SEUICONJ t>3E D — FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK IC H O R DATA SHEET FEATURES •

MJE13007

Abstract: MJE-13007 13006 TRANSISTOR mje13007 TRANSISTOR MJE13006 transistor 13006 MJE13007Q
Contextual Info: [ [ ^^53131 Q Q n i 3 1 D EV ELO P M EN T DATA a MJE13006 MJE13007 T his data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T-33-I3 SILICO N DIFFUSED POWER TRAN SISTO R High-voltage, high-speed glass-passivated npn power transistor in a T 0 -2 2 0 envelope, intended for use

amphenol 74868

Contextual Info: 531-40051 NO TES : THIRD MATERIALS BODY R E V IS IO N S DRAWING OF INSULATOR PROJ. REV ^ DESCRIPTION A OFFICIAL E N G. RELEASE T O MF G. DATE ECO 2/4/98 42337 APPR JW CONSTRUCTION • BRASS, CONTACTS ANGLE NO. BRIGHT ■ BeCu, - ACID GOLD OVER TIN PLATED

thyratron

Abstract: Ignition Transformer H25002 4022D 4078GA
Contextual Info: Ref.: 3V/531 E Hot-Cathode MercuryVapour Thyratron Code: 3V/531E This thyratron is equivalent to, and replaces, the 4078G A type, which is now obsolete. CATHODE. Oxide-coated, shielded filament Filament voltage 5 Nom inal current 20 M inim um cathode heating time ambient

5320-5

Contextual Info: 531 HA-5320 HARRIS S E M I C O N D U C T O R High Speed Precision Monolithic Sample and Hold Amplifier March1993 Features Description • Gain, D C .2 x 1 0 V/V • A quisltlon T im e . 1.0^3 0.01%

15006

Abstract: STD 243 S N53100Z1EB1 53100z f6z1 EH8006Z1
Contextual Info: Three Phase Bridges Pa rt N u m b er G 5360Z 1EB 1 G 50480Z1EB 1 G 5380Z 1EB 1 G 504100Z1EB 1 G 53100Z 1EB 1 G 504120Z1EB 1 G 53120Z 1EB 1 E HF2Z1 E H S2Z1 EH10002Z1 EH8002Z1 EH 15002Q EH 15002Y N 50420Z1EB1 N 5320Z1EB1 N50440Z1EB1 N 5340Z1EB1 N 50460Z1EB1

UEC-14

Contextual Info: O K I Semiconductor MSM531622C - 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit Mask ROM DESCRIPTION The OKI M SM S31622C is a high-speed CM OS M ask ROM that can electrically sw itch betw een 1,048 576w ord x 16-bit or 2 097,152-w o rd x 8-bit configurations. The M S M 531622C operates on a single 5 0 V p ow er

TLY 2741

Abstract: SMd 6CA MQUAD 100175 Logic Package Information 100175 package 100175 smd Package Information 100175 translator Logic Package Information 100175 translator Logic smd Package Information TQ9303 TQ9501
Contextual Info: S E M I C O N D U C T O R , I N C 71 TQ9501/9502 531/1063 Mbaud Fibre Channel Transmitter and Receiver part of the FC531/FC1063 Fibre Channel 531 and 1063 Megabaud chip set.In addition to the transmitter and receiver, TriQuint offers the ENcoder/ DATACO M

ADC CCIR 601

Abstract: Solid state CCIR ca 151 KS0122-S aexo chroma 175 ic CCIR601 KS0119 KS0122 multi S-Video Input
Contextual Info: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required

Contextual Info: O K I Semiconductor M SM 531031B_ 131,072-W ord x 8-B it Low -V oltage M ask ROM DESCRIPTION The O K I M S M 531031B is a high -sp eed silicon gate C M O S M ask R O M w ith 131,072-w ord x 8-bit capacity. T h e M S M 531031B o p erates on a sin gle 3.0 V or 3.3 V p ow er su p p ly but offers the sam e fast access tim es

Contextual Info: KMM372F3200AK3 DRAM Module ELECTRONICS KMM372F3200AK3/AS3, KMM372F3280AK3/AS3 Extended Data Out Mode 32Mx72 DRAM DIMM with ECC, 3.3V Preliminary GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The