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    DARLINGTON TRANSISTOR TO 92 Search Results

    DARLINGTON TRANSISTOR TO 92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PS2562L1-1-A Renesas Electronics Corporation High Isolation Voltage Darlington Transistor Type MULTI Photocoupler Series Visit Renesas Electronics Corporation
    PS2562L-1-V-F3-A Renesas Electronics Corporation High Isolation Voltage Darlington Transistor Type MULTI Photocoupler Series Visit Renesas Electronics Corporation
    PS2562L-1-V-A Renesas Electronics Corporation High Isolation Voltage Darlington Transistor Type MULTI Photocoupler Series Visit Renesas Electronics Corporation
    PS2562L2-1-A Renesas Electronics Corporation High Isolation Voltage Darlington Transistor Type MULTI Photocoupler Series Visit Renesas Electronics Corporation
    PS2562L-1-F3-A Renesas Electronics Corporation High Isolation Voltage Darlington Transistor Type MULTI Photocoupler Series Visit Renesas Electronics Corporation

    DARLINGTON TRANSISTOR TO 92 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KSP13

    Abstract: NPN Transistor 5V DARLINGTON transistor ksp13 "Darlington Transistor" transistor darlington npn Darlington transistor dj005b 625mW npn darlington TO92 ksp-13
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP13/14 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=30V • Collector Dissipation:PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		KSP13/14 625mW KSP13 KSP14 KSP13 NPN Transistor 5V DARLINGTON transistor ksp13 "Darlington Transistor" transistor darlington npn Darlington transistor dj005b 625mW npn darlington TO92 ksp-13 PDF

    MPSA13

    Abstract: PT 10000
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		MPSA13 QW-R201-016 PT 10000 PDF

    Darlington transistor

    Abstract: MPSA13 transistor 625
    Text: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		MPSA13 100ms QW-R201-016 Darlington transistor transistor 625 PDF

    transistor 100n

    Abstract: KSP13 100N transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP13A4 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCES =30V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage CoHector-Emitter Voltage


    OCR Scan     		KSP13A4 625mW KSP13 KSP14 KSP14 100mA, KSP13/14 transistor 100n 100N transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP12 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=20V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Emitter Voltage Emitter-Base Voltage


    Original     		KSP12 625mW PDF

    KSP13

    Abstract: transistor ksp13
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP13/14 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=30V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		KSP13/14 625mW KSP13 KSP14 KSP14 KSP13 transistor ksp13 PDF

    MPSA63

    Abstract: Transistor MPSA63
    Text: MPSA63 PNP SILICON DARLINGTON TRANSISTOR TO-92 MPSA63 is PNP silicon darlington transistor designed for preamplifier input applications. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VCES 30V Collector-Base Voltage VCBO 30V Emitter-Base Voltage VE BO


    OCR Scan     		MPSA63 MPSA63 300mA 625mW 100nA 100mA 300us, Transistor MPSA63 PDF

    NPN Transistor 5V DARLINGTON

    Abstract: Darlington transistor to 92 KSP25 KSP27 KSP26 vce max 100 ic max 100MA NPN "Darlington Transistor"
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V • Collector Dissipation:PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Rating


    Original     		KSP25/26/27 KSP25: KSP26: KSP27: 625mW KSP25 KSP26 KSP27 NPN Transistor 5V DARLINGTON Darlington transistor to 92 KSP25 KSP27 KSP26 vce max 100 ic max 100MA NPN "Darlington Transistor" PDF

    NPN Transistor 5V DARLINGTON

    Abstract: MPS-A27
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA27 DARLINGTON TRANSISTOR - • C ollector-Em itter Voltage: VCEs=60V • Collector Dissipation: Pc max =625mW to -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcES Vebo lc


    OCR Scan     		MPSA27 625mW 100mA, NPN Transistor 5V DARLINGTON MPS-A27 PDF

    KSP75

    Abstract: KSP76 KSP77
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP75/76/77 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=KSP75: 40V KSP76: 50V KSP77: 60V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Rating


    Original     		KSP75/76/77 KSP75: KSP76: KSP77: 625mW KSP75 KSP76 KSP77 KSP75 KSP76 KSP77 PDF

    MPSA14

    Abstract: TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON
    Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		MPSA14 QW-R201-054 TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON PDF

    Darlington transistor to 92

    Abstract: MPS712 power transistor pnp darlington
    Text: DATA SHEET MPS712 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS712 is a silicon PNP Darlington Transistor, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MAXIMUM RATINGS TA=25°C


    Original     		MPS712 MPS712 800mA, 800mA 100mA 500mA Darlington transistor to 92 power transistor pnp darlington PDF

    TRANSISTOR 077

    Abstract: MPSA113 MPSA11
    Text: UTC MPSA113 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA113 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		MPSA113 QW-R201-042 TRANSISTOR 077 MPSA11 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP62/63/64 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCES=KSP62: 20V KSP63/64: 30V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage


    Original     		KSP62/63/64 KSP62: KSP63/64: 625mW KSP62 KSP63/64 PDF

    TO-92 transistor

    Abstract: KSP12
    Text: KSP12 KSP12 Darlington Transistor • Collector-Emitter Voltage: VCES=20V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KSP12 625mW 625mW KSP12TA KSP12BU TO-92 transistor KSP12 PDF

    transistor c 616

    Abstract: ksp25
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: V ces=KSP25: 40V KSP26:50V KSP27:60V • Collector Dissipation:Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) C haracteristic Collector-Base Voltage


    OCR Scan     		KSP25/26/27 KSP25: KSP26 KSP27 625mW KSP25 KSP26 KSP25 transistor c 616 PDF

    KSP75

    Abstract: KSP76 KSP77
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP75/76/77 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: V CES = KSP75: 40V KSP76: 50V KSP77: 60V • C ollector D issipation: Pe max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic


    OCR Scan     		KSP75tf6J77 KSP75: KSP76: KSP77: 625mW KSP75 KSP76 KSP77 100/iA, KSP75 KSP76 KSP77 PDF

    Darlington transistor to 92

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP75/76/77 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=KSP75: 40V KSP76: 50V KSP77: 60V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage


    Original     		KSP75/76/77 KSP75: KSP76: KSP77: 625mW KSP75 KSP76 KSP77 Darlington transistor to 92 PDF

    KSP12

    Abstract: No abstract text available
    Text: KSP12 KSP12 Darlington Transistor • Collector-Emitter Voltage: VCES=20V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KSP12 625mW KSP12 PDF

    KSP26

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage


    Original     		KSP25/26/27 KSP25: KSP26: KSP27: 625mW KSP25 KSP26 KSP27 KSP26 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SPMICONDUCTOR INC 14E S MPSA62 D | 7^4115 00073b? 3 J PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR TO-92 • Collector-Emitter Voltage: V ces=20V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		00073b? MPSA62 625mW PDF

    c 458 c transistor

    Abstract: KSP12 transistor c 458
    Text: KSP12 KSP12 Darlington Transistor • Collector-Emitter Voltage: VCES=20V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		KSP12 625mW c 458 c transistor KSP12 transistor c 458 PDF

    NPN Transistor 5V DARLINGTON

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V Ces = KSP25: 40V KSP26: 50V KSP27: 60V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (T8=25°C) Characteristic Collector Base Voltage


    OCR Scan     		KSP25/26/27 KSP25: KSP26: KSP27: 625mW KSP25 KSP26 KSP27 NPN Transistor 5V DARLINGTON PDF

    KSP12

    Abstract: transistor 605
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP12 DARLINGTON TRANSISTOR TO-92 • CoHector-Emitter Voltage: V C e s “ 2 0 V • Collector DissipatkxrPc max «025mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) C haracteristic CoHector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		KSP12 025mW KSP12 transistor 605 PDF