MPSA27 Search Results

MPSA26

Contextual Info: bTE T> m MPSA25 MPSA26 MPSA27 bbS3131 0D2B01S b?0 • APX N AUER PHILIPS/DISCRETE A NPN DARLINGTON TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. PNP complementary types are MPSA75, MPSA76, and MPSA77. Q UICK REFERENCE D A T A

MPSA25

Abstract: MPSA27 MPS-A25 MPSA26 MPSA75 MPSA76 MPSA77 MPS-A26
Contextual Info: blE ]> • I I M P ^ A P 'S II MPSA27 bb53«i31 DDSÔG1S b70 *A P X N ANER PHILIPS/DISCRETE MPSA26 NPN DARLINGTON TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. PNP complementary types are MPSA75, MPSA76, and MPSA77.

npn darlington motorola to92

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor NPN Silicon COLLECTOR 3 EMITTER 1 CASE 29-04, STYLE 1 TO-92 TO—226AA MAXIM UM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Symbol MPSA27 Unit VCES 60 Vdc Vdc vebo 10 Collector Current — Continuous

NPN Transistor 5V DARLINGTON

Abstract: MPS-A27
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA27 DARLINGTON TRANSISTOR - • C ollector-Em itter Voltage: VCEs=60V • Collector Dissipation: Pc max =625mW to -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcES Vebo lc

MPSA27

Abstract: MPSA77
Contextual Info: SEMICONDUCTOR MPSA27 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ᴌComplementary to MPSA77. N E K G J D MAXIMUM RATINGS Ta=25ᴱ UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCES 60 V Emitter-Base Voltage

MPSA27

Abstract: MPSA77 MPS-A27
Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ᴌComplementary to MPSA27. N E K G J D MAXIMUM RATINGS Ta=25ᴱ UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage

MPS-A27

Abstract: MPSA27 MPSA27G MPSA27RLRA MPSA27RLRAG
Contextual Info: MPSA27 Darlington Transistor NPN Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous

MPSA25

Abstract: MPS-A27 mpsa27 transistor mpsa25 mpsa26
Contextual Info: Philips Semiconductors Product specification NPN Darlington transistors MPSA25; MPSA26; MPSA27 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 collector • High DC current gain (min. 10000). 2 base 3 emitter APPLICATIONS

Contextual Info: MPSA27 Darlington Transistor NPN Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous

Contextual Info: ON Semiconductort Darlington Transistor MPSA27 NPN Silicon MAXIMUM RATINGS Rating Symbol MPSA27 Unit Collector −Emitter Voltage VCES 60 Vdc Emitter −Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C

Contextual Info: S EM IC O N D U C T O R MPSA77 TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R D A RLIN G TO N T R A N SISTO R FEA TU RES • Complementary to MPSA27. DIM A B — XEj G -1 M A X IM U M RA TING S Ta=25°C CHARACTERISTIC MILLIMETERS 4.70 MAX 4.80 MAX

MPSA27

Abstract: MPSA77 VEB-10V
Contextual Info: SEMICONDUCTOR MPSA27 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A Complementary to MPSA77. N E K G J D MAXIMUM RATINGS Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage

MPSA27

Abstract: MPSA27G MPSA27RLRA MPSA27RLRAG MPS-A27
Contextual Info: MPSA27 Darlington Transistor NPN Silicon Features • These are Pb-Free Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C

MPSA27

Abstract: MPS-A27 npn darlington MPSA26 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA26; MPSA27 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 27 Philips Semiconductors Product specification NPN Darlington transistors MPSA26; MPSA27 FEATURES

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor NPN Silicon MPSA27 COLLECTOR 3 EMITTER 1 M AXIM UM RATINGS Rating Symbol MPSA27 Unit Colleotor-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage vebo 10 Vdc Collector Current — Continuous >C 500

MPSA27

Abstract: MPSA28 PZTA27
Contextual Info: MPSA27/PZTA27 MPSA27/PZTA27 NPN General Purpose Amplifier 4 • This device is designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03. • See MPSA28 for characteristics. 3 2 TO-92 1 1. Emitter 2. Base 3. Collector

BC237

Abstract: bc547 small signal low power transistor transistor equivalent 2n5551 MPSA27 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MPSA27 NPN Silicon COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol MPSA27 Unit Collector – Emitter Voltage VCES 60 Vdc Emitter – Base Voltage

Contextual Info: MPSA27/PZTA27 MPSA27/PZTA27 NPN General Purpose Amplifier 4 • This device is designed for applications requiring extremely high current gain at collector currents to 500mA. • Sourced from process 03. • See MPSA28 for characteristics. 3 2 1 TO-92 1 1. Emitter 2. Base 3. Collector

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA27 TRANSISTOR NPN 1.EMITTER FEATURES z High Current z Low Voltage z High DC Current Gain 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Darlington Transistor

Abstract: MPSA27
Contextual Info: SEMICONDUCTOR MPSA27 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ・Complementary to MPSA77. N E K G J D MAXIMUM RATINGS Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage

Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ・Complementary to MPSA27. N E K G J D MAXIMUM RATINGS Ta=25℃ RATING UNIT VCBO -60 V Collector-Base Voltage H F Collector-Emitter Voltage VCES -60

Contextual Info: MPSA27 CASE 29-04, STYLE 1 TO-92 TO-226AA M A XIM U M RATINGS Rating Sym b ol M P S-A 2 5 M P S-A 2 6 M P S -A 2 7 40 60 50 Unit V dc Collector-Emitter V oltage VCES Em itter-Base V oltage Vebo 10 V dc Collector Current — C o n tin u o u s >C 500 m Adc

MPSA27RLRAG

Abstract: MPSA27 MPSA27G MPSA27RLRA MPSA27RLRM MPSA27RLRMG MPS-A27 Marking code mps
Contextual Info: MPSA27 Darlington Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 60 Vdc Emitter −Base Voltage VEBO 10 Vdc Collector Current − Continuous

MPSA27

Abstract: MPSA77
Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A Complementary to MPSA27. N E K G J D RATING UNIT VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage VEBO -10 V Collector Current IC -500