D68619 Search Results

Contextual Info: 4bflfc.E2b G G D 1 7 C11 3ÖT • IXY □IXYS IGBT with Diode IXSN50N60U1 I, CES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V 2 ■ 4" é 'T n Symbol Test Conditions VcES T, = 25°C to 150°C 600 V Vo» Tj = 25°C to 150°C; R ^ = 1 MQ

IXSH15N120AU1

Abstract: IC-90
Contextual Info: IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A VCES = 1200 V VCE sat = 4.0 V "S" Series - Improved SCSOA Capability C G E Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ

1xys

Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Contextual Info: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500

Contextual Info: H b û b 2 2 b 0 0 0 1 Ö 0 3 ^21 I IX Y ID IXYS IG B T w ith D io d e ÌX S N 3 0 N 10 0 A U 1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 é * 'T i Symbol Test Conditions V«s Tj = 25°C to 150°C 1000 V v«* Tj = 25°C to 150°C; RGE= 1 M£2

ixys dsei 2x61-06C

Contextual Info: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4

ixys dsei 2x30-05c

Abstract: ixys dsei 2x30-04c ixys dsei
Contextual Info: 4bflb22b O G O ia n D Y I X E H B IIX Y S DSEI 2x30 IFAV DSEI 2x31 VRRM Fast Recovery Epitaxial Diodes 2x30 A 400-600 V < 35 ns miniBLOC, SOT-227 B v RSM V T yp e Typ e V V 440 540 640 400 500 600 Symbol Test Conditions •cavi . TVJ = Tvjm Tc = 85°CT rectangular, 6= 0.5

IXGH9090

Abstract: IXYS SP
Contextual Info: □ IX Y S IXGH9090 HiPerFAST IGBT with Diode ^C 25 V CES V CE sat Lf i 48 A 600 V 2.7 V 400 ns TO-247AD M axim um R atings S ym b o l T e st C onditions VcES T j = 2 5 'C to 150°C 600 V ^C G R T,J = 2 5 'C to 150” C; Rb t = 1 MQ 600 V V GES Continuous

IXSN40N60AU1

Abstract: bt 58a E72873 PS-33A 40n60 15-05J
Contextual Info: m n b abP-gb O D D l? ^ b7D • I X Y in ix Y S IGBT with Diode IXSN40N60AU1 High Short Circuit SOA Capability 2 * Symbol CCS vCGfl Test Conditions 600 V Tj = 25°C to 150°C; R6£ = 1 M ii 600 V Continuous ±20 V VGEU Transient ±30 V ■cs Tc = 25°C 45

ixys dsei 2x31-10b

Contextual Info: QIXYS 4bflfc>22b 0 0 0 1 0 2 1 TM7 « I X Y Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t_ = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSU v rrm V T yp e Type DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B DSEI 2x31-08B DSEI 2x31-10B

Contextual Info: Mbôb22b DÜ0n4S 5bl « I X Y □IXYS V10500-12S Advanced Technical Information Hybrid IGBT Power Modules S ym b o l v CES C o n d itio n M ax. R ating 1200 V ±30 V T s = 25°C 1 600 A T s = 65°C 500 A 1200 A T s = 25°C 430 A T S = 25°C , 1ms 860 A 2500

150-12SE

Abstract: VIE150-12S FIB5 IXYS IGBT 3kv igbt inverter circuit for induction heating Induction Heating Resonant Inverter
Contextual Info: Mfc.fit.22b 0001027 3bS IX Y ISOSMART IG B T M o d u le s \ 1 nixYS 19 93IXYS Corporation IXYS Corporation iibflb22b 0DDlfl2B ST1 • IXY VIE 150-12SE ISOSMART™ Module Description of the ISOSMART™ Module The VIE150-12SE module, shown diagrammatically in Figure 1, is a 1200V, 150A, IGBT

VAJI

Abstract: TI42A
Contextual Info: 4bûb22b Ü001Ö03 T21 IX Y lOIXYS IGBT with Diode IXSN30N100AU1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 & 4 "T i Symbol Test Conditions V«s T j = 25°C to 150°C 1000 V T j = 25°C to 150°C; RGE = 1 M£2 1000 V Maximum Ratings

Contextual Info: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi

ixys dsei 2x30-06c

Abstract: ixys dsei 2x30-05c
Contextual Info: 4bflb52b O O O i a n 2TÌ • IXY □IXYS DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diodes I FAV V t RRM rr = 2x30 A = 400-600 V < 35 ns miniBLOC, SOT-227 B v RSIf v Type Type DSEI 2X30-04C DSEI 2X30-05C DSEI 2X30-06C DSEI 2x31 -04C DSEI 2x31-050 DSEI 2x31-060

IXTN36N50

Contextual Info: • 4 b û b 2 2 b O G O l ûl l TTfl ■ IX Y DIXYS Pow er M O S FE T IX T N 3 6 N 4 5 IX T N 3 6 N 5 0 N-Channel Enhancement Mode D cont v¥ p dss DS(on) = 36 A = 450/500 V = 0 .1 2 & R = 0.5 Q Symbol Test Conditions Voss Tj = 25°C to 150°C Maximum Ratings

IXSE502

Contextual Info: HbflbSBb DDG13flb 3 ^ • IXY □ IXYS Data Sheet No. 915502A July 1993 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 Features Direct two-channel Quadrature Inputswith Schmitt Trigger Circuitry X4 Quadrature Detection for High Resolution EXTERNAL EVENT Detection and Latching for

Contextual Info: □ I X Y IXSH15N120AU1 S P R E L IM IN A R Y D A T A S H E E T IGBT with Diode ^C 2 5 "S" Series - Improved SCSOA Capability Symbol T est C onditions V CES T j = 2 5 °C to 150°C V CGR T j = 2 5 °C to 150°C ; f^E= 1 M ß V GES V CES V CE sat M axim um Ratings

Contextual Info: 4bôb52b 0001^43 M'I'î B I X Y VI0400-12S Advanced Technical Information Hybrid IGBT Power Modules S ym bol C o n d itio n vCES vGES T s = 2 5°C VCE = 1200V lC25 = 475A M ax. R ating 1200 V ±30 V ^C25 T s = 25°C 475 A ^C6S T s = 65°C 375 A 'cm T s = 25°C , 1 ms

IXYS IGBT

Abstract: igbt 600V 600A short circuit
Contextual Info: QIXYS VI0600-12S Advanced Technical Information VCE= 1200 V Hybrid IGBT Power Modules lc =60A COLLECTOR COLLECTOR KELVIN GATE Symbol Condition V cH S Ts = 25°C Max. Rating v GES >c >c I CM *F 'PM PC Ts = 25°C Ts = 80°C Ts = 25°C , 1ms V V 600 A A A 1200

IXSN50N60U1

Abstract: 25CC E72873 50N60 50N60U1
Contextual Info: 4 b û b 2 2 b □ □ □ 1 7 ‘ìl 3flT • IX Y □IXYS IGBT with Diode IXSN50N60U1 >c V .„ High Short Circuit SOA Capability =53A = 600 V VcE<sa„ = 2-5 V 2 4 S ym bol T e st C o n d itio n s 'T l M axim um R a tin g s VcES T j = 25°C to 150°C 600

3ADW000095R0701 DCS400 MANUAL E G

Abstract: ktk variable speed thyristor controller ABB make REC 670 ktk thyristor dc drives manual DCS401 manual temperature controller CHB 702 30 KW 1500rpm ABB DC motor DCS402 abb contactor K22 Project Report of fire alarm using thermistor
Contextual Info: DCS Thyristor power converter for DC drive systems 20 to 1000 A 9 to 522 kW Manual DCS 400 II K 1-1 This manual is valid for DCS 400 Rev A including software version 108.0 List of contents MANUAL 1 DCS 400 - the compact-size DC drive . II K 1-3 2 System overview of DCS 400 . II K 2-1

ixys dsei 2*61-10b

Abstract: ATS1000 ixys dsei 12 IXYS DSEI 2X61-06
Contextual Info: 4bfl b22b 0001025 5T2 *IXY □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 IFAV V t miniBLOC, SOT-227 B v RSM V 640 800 1000 Sym bol V RRM 600 800 1000 2 OSEI 2x61-06B OSEI 2x61-08B DSEI 2x61-10B Ho Maximum Ratings per diode j. t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

2x30-10B

Abstract: 2x31-10b ixys dsei 2x31-10b ixys dsei 2x30-10b
Contextual Info: MbflL.22b 0001021 T47 « I X Y □IXY S Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t. = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSM V 640 800 1000 v rrm T y p e T y p e V 600 800 1000 DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B