D2 TRANSISTOR Search Results

TDA 1157

Abstract: Schematics 5250 IC TDA 2002 tda 2200 EvalBoard TDA5250 tda 1200 FM EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES quartz oscilator nom 870 b 2nf
Contextual Info: Wireless Components ASK/FSK 868MHz Wireless Transceiver TDA 5250 D2 Version 1.6 Specification July 2002 confidential preliminary confidential Revision History Current Version: Preliminary Specification V1.6 as of 09.07.02 describing design step D2 Previous Version: V1.5

Contextual Info: LESHAN RADIO COMPANY, LTD. LDP4803ET1G Dual P-Channel Enhancement Mode Field Effect Transistor Features VDS V = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) S1 S2 D2 D2 D1 D1 8 7 6 5 G1 4803 1 SOP-8 top view 2

P2804ND5G

Abstract: SEM 2005 p2804 niko P2804N g1id
Contextual Info: NIKO-SEM P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary TO-252-5 Lead-Free PRODUCT SUMMARY N-Channel 40 28mΩ 7A P-Channel -40 55mΩ -5.5A D2 G1 G2 S1 G : GATE D : DRAIN S : SOURCE S1 G1 ID D1/D2 RDS ON S2 G2 D1 V(BR)DSS S2

Contextual Info: High Voltage Latch-Up Proof, Quad SPST Switches ADG5412/ADG5413 FEATURES FUNCTIONAL BLOCK DIAGRAMS S1 D1 S2 S2 IN2 IN2 D2 D2 ADG5412 ADG5413 S3 S3 IN3 IN3 D3 D3 Relay replacement Automatic test equipment Data acquisition Instrumentation Avionics Audio and video switching

DSA-001

Abstract: dsa001 D2 Pack lm117 3.3V LM117 SVR1085-12M voltage regulator, 0 to 48V, 0 to 15 amps DS-A001
Contextual Info: SVR1085-3.3M, Z, D2, & D3 thru SVR1085-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR

c5v8

Abstract: CEM9945
Contextual Info: CEM9945 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 60V , 3.3A , RDS ON =100m Ω @VGS=10V. RDS(ON)=200m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

CEM9926A

Contextual Info: CEM9926A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

CEM9926

Abstract: CEM9
Contextual Info: CEM9926 Aug. 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

CEM4936

Contextual Info: CEM4936 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 5.8A , RDS ON =37m Ω RDS(ON)=55m Ω @VGS=10V. @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 High power and current handing capability.

CEM8207

Contextual Info: CEM8207 Feb. 2003 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =20m Ω @VGS=4.5V. RDS(ON)=30m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

CEM8206

Contextual Info: CEM8206 Feb. 2003 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V , 6A , RDS ON =20m Ω @VGS=4.5V. RDS(ON)=30m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

CEM2005

Contextual Info: CEM2005 PRELIMINARY Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES • 2 0 V , 5A Rds(on)=32iti Q @ V gs =4.5V. Di Rds(on)=43i71 Q @ V gs =2.5V. - 2 0 V , - 4 A , Rds(on)=95iti Q Di D2 D2 @ V gs =-4.5V. Rds(on)=1 25m Q @ V gs =-2.5V.

CEM9956A

Contextual Info: CEM9956A March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V , 3.7A , RDS ON =80mΩ @VGS=10V. RDS(ON)=110m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

CEM8933

Contextual Info: CEM8933 AUGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -20V , -4.3A , RDS ON =90mΩ @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

BSO211P

Contextual Info: BSO211P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO211P P-SO 8 V RDS on 67 mΩ -4.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View

Contextual Info: CEM4804 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 7.9A , RDS ON =20mΩ @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

BSO207P

Contextual Info: BSO207P TM OptiMOS -P Power-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO207P P-SO 8 V RDS on 45 mΩ -5.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View

LA 2910

Abstract: D2 Pack dsa001
Contextual Info: SVR1086-2.85M, Z, D2, & D3 thru SVR1086-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR

smd diode S2 64a

Abstract: BSO203P
Contextual Info: BSO203P OptiMOS -P Power-Transistor TM Product Summary Feature • P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO203P P-SO 8 V RDS on 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Package

BSO207P

Contextual Info: BSO207P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO207P P-SO 8 V RDS on 45 mΩ -5.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View

CEM9925

Contextual Info: CEM9925 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V , 5A , RDS ON =45m Ω @VGS=4.5V. RDS(ON)=60m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

CEM4432

Contextual Info: CEM4432 PRELIMINARY Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V , -5.5A , RDS ON =40mΩ RDS(ON)=70mΩ @VGS=-10V. @VGS=-4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 1 2 3 4 S1 G1 S2 G2 High power and current handing capability.

CEM8912

Contextual Info: March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 7 A , Rds on =28iti Q @ Vgs=1 0V. R ds (o n )=45 iti Q Di @ Vgs=4.5V. Di D2 D2 • Super high dense cell design for extremely low R ds(on>. • High power and current handing capability.

BSO303P

Contextual Info: BSO303P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO303P P-SO 8 V RDS on 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View