CEM2005 Search Results

CEM2005 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CEM2005		Chino-Excel Technology	Dual Enhancement Mode Field Effect Transistor(N and Channel)		Scan	PDF

CEM2005 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CEM2005 Contextual Info: CEM2005 PRELIMINARY Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES • 2 0 V , 5A Rds(on)=32iti Q @ V gs =4.5V. Di Rds(on)=43i71 Q @ V gs =2.5V. - 2 0 V , - 4 A , Rds(on)=95iti Q Di D2 D2 @ V gs =-4.5V. Rds(on)=1 25m Q @ V gs =-2.5V.	OCR Scan	CEM2005 32iti 43i71 95iti 125iti CEM2005	PDF
CEM2006 Abstract: Calex cem2007 CEM2003 CEM2001 CEM2005 CEM2016 CEM2024 Contextual Info: C/LEX 2 W A T T D G /D C C O N V E R T E R S CEM2000 S E R IE S SPECIFICATIONS • • • • • • 24-Pin DIP Package High Efficiency up to 83% Regulated Outputs Pi Input Filter 500 Vdc Isolation Continuous Short Circuit Protection A ll S p e c ific a tio n s a re T y p ic a l at N o m in a l Line .	OCR Scan	CEM2000 24-Pin 8-36V CEM2001 CEM2002 CEM2003 CEM2004A CEM2005 CEM2006 CEM2007 Calex CEM2016 CEM2024	PDF

Catalog Datasheet

Type

Document Tags

PDF

CEM2005

Contextual Info: CEM2005 PRELIMINARY Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES • 2 0 V , 5A Rds(on)=32iti Q @ V gs =4.5V. Di Rds(on)=43i71 Q @ V gs =2.5V. - 2 0 V , - 4 A , Rds(on)=95iti Q Di D2 D2 @ V gs =-4.5V. Rds(on)=1 25m Q @ V gs =-2.5V.

OCR Scan

CEM2005 32iti 43i71 95iti 125iti CEM2005

PDF

CEM2006

Abstract: Calex cem2007 CEM2003 CEM2001 CEM2005 CEM2016 CEM2024
Contextual Info: C/LEX 2 W A T T D G /D C C O N V E R T E R S CEM2000 S E R IE S SPECIFICATIONS • • • • • • 24-Pin DIP Package High Efficiency up to 83% Regulated Outputs Pi Input Filter 500 Vdc Isolation Continuous Short Circuit Protection A ll S p e c ific a tio n s a re T y p ic a l at N o m in a l Line .

OCR Scan

CEM2000 24-Pin 8-36V CEM2001 CEM2002 CEM2003 CEM2004A CEM2005 CEM2006 CEM2007 Calex CEM2016 CEM2024

PDF