CEM8912 Search Results
CEM8912 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| CEM8912 | Chino-Excel Technology | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | |||
| CEM8912 | Chino-Excel Technology | Dual N-Channel Enhancement Mode Field Effect Transistor | Scan |
CEM8912 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CEM8912Contextual Info: CEM8912 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 7A , RDS ON =28m Ω @VGS=10V. RDS(ON)=45m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. |
Original |
CEM8912 CEM8912 | |
CEM8912Contextual Info: March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 7 A , Rds on =28iti Q @ Vgs=1 0V. R ds (o n )=45 iti Q Di @ Vgs=4.5V. Di D2 D2 • Super high dense cell design for extremely low R ds(on>. • High power and current handing capability. |
OCR Scan |
CEM8912 28iti 45i7iQ CEM8912 |