2SK3114 equivalent
Abstract: 2sk3114 2SK3114 APPLICATION
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and PART NUMBER
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2SK3114
2SK3114
O-220
O-220)
O-220
2SK3114 equivalent
2SK3114 APPLICATION
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2SK3113
Abstract: 2SK3113-Z
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK3111
Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK3110
Abstract: d1333
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC
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2SK3110
2SK3110
O-220
O-220
d1333
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PDF
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nec 2501
Abstract: d1333 2SK3108
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK3111
Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3111 TO-220AB 2SK3111-S TO-262 2SK3111-ZJ TO-263 features a low on-state resistance and excellent
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2SK3111
2SK3111
O-220AB
2SK3111-S
O-262
2SK3111-ZJ
O-263
2SK3111-S
2SK3111-ZJ
MP-25
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION NEC / MOS FIELD EFFECT TRANSISTOR / 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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OCR Scan
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2SK3111
2SK3111
O-262
2SK3111-ZJ
O-220AB
2SK3111-S
O-263
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PDF
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2SK3111
Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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Original
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2SK3111
2SK3111
O-262
2SK3111-ZJ
O-220AB
2SK3111-S
O-263
2SK3111-S
2SK3111-ZJ
MP-25
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PDF
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2SK3112
Abstract: 2SK3112-S 2SK3112-ZJ MP-25
Text: PRELIMINARY PRODUCT INFORMATION NEC / MOS FIELD EFFECT TRANSISTOR / 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2S K 3112 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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OCR Scan
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2SK3112
2SK3112
2SK3112-S
2SK3112-ZJ
O-220AB
O-262
O-263
O-220AB
MP-25
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2SK3110
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC
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2SK3110
2SK3110
O-220
O-220
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smd diode code b54
Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
Text: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current
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OCR Scan
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BUZ101S
P-T0220-3-1
Q67040-S4013-A2
E3045A
P-T0263-3-2
Q67040-S4013-A6
E3045
smd diode code b54
smd transistor c015
smd code book
71ss
TRANSISTOR SMD MARKING CODE c015
01333LA
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Untitled
Abstract: No abstract text available
Text: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current
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OCR Scan
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O-220
C67078-S1317-A2
0235bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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2SK3116
Abstract: 2SK3116-S 2SK3116-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description Ordering Information The 2SK3116 is N channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power
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2SK3116
2SK3116
O-262
2SK3116-ZJ
O-220
2SK3116-S
O-263
2SK3116-S
2SK3116-ZJ
MP-25
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2sk3114
Abstract: 2SK3114 equivalent
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3114 is N-Channel DMOS FET device that features a Ordering Information low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power
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Original
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2SK3114
2SK3114
O-220
O-220
2SK3114 equivalent
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K3115
Abstract: No abstract text available
Text: DATA SHEET_ NEC MOS FIELD EFFECT TRANSISTOR 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2S K 3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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OCR Scan
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2SK3115
K3115
T0-220
P-45F)
K3115
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T161-160
Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.
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ISO9001
to300
SF15CL
500Aelement
T161-160
SCR T161-160
t153-630
KP25A
T123-250
tc171
ZP50A
T143-630 SCR
KP200A
T151-100
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2SK3116
Abstract: 2SK3116-S 2SK3116-Z MP-25 MP-25Z
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3116 N チャネル パワーMOS FET スイッチング用 2SK3116 は N チャネル縦型 MOS FET でオン抵抗が低く，スイッチング特性が優れており，スイッチング電源，AC
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2SK3116
O-220AB
2SK3116-S
O-262
2SK3116-Z
O-220SMD
D13339JJ2V0DS
2SK3116
2SK3116-S
2SK3116-Z
MP-25
MP-25Z
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2SK3109
Abstract: 2SK3109-S 2SK3109-Z MP-25 MP-25Z 55PF
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3109 N チャネル パワーMOS FET スイッチング用 2SK3109 は N チャネル縦型 MOS FET で，オン抵抗が低くスイッチング特性が優れており，DC/DC コンバータなどの高
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2SK3109
O-262
MP-25
2SK3109-Z
O-220AB
MP-25)
2SK3109-S
O-220SMD
2SK3109
2SK3109-S
2SK3109-Z
MP-25Z
55PF
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2SK3112
Abstract: 2SK3112-S 2SK3112-Z MP-25 MP-25Z ITE 8502 d1333
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3112 N チャネル パワーMOS FET スイッチング用 工業用 2SK3112 は N チャネル縦型 MOS FET でオン抵抗が低く，スイッチング特性が優れており，DC/DC コンバータ，ア
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2SK3112
O-262
2SK3112-Z
O-220AB
2SK3112-S
O-220SMD
O-220AB)
O-262)
2SK3112
2SK3112-S
2SK3112-Z
MP-25
MP-25Z
ITE 8502
d1333
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
|
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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2SK3109
Abstract: 2SK3109-S 2SK3109-ZJ MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE 2SK3109 TO-220AB MP-25 switching characteristics, and designed for high voltage 2SK3109-S TO-262 (MP-25 Fin Cut) applications such as DC/DC converter.
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2SK3109
O-220AB
MP-25)
2SK3109-S
O-262
MP-25
2SK3109-ZJ
O-263
MP-25ZJ)
2SK3109
2SK3109-S
2SK3109-ZJ
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PDF
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nec 2501
Abstract: 2SK3110 nec 2702
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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Original
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2SK3110
2SK3110
O-220
O-220
nec 2501
nec 2702
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