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    Infineon Technologies AG IDT08S60C

    8 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC (Also Known As: D08S60C)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IDT08S60C 787
    • 1 $5.94
    • 10 $5.94
    • 100 $2.574
    • 1000 $2.376
    • 10000 $2.376
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    D08S60C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT08S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark QC 19 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 8 A • Temperature independent switching behavior I F @ T C < 100 °C


    Original     		IDT08S60C PG-TO220-2-2 20mA2) PDF

    D08S60C

    Abstract: IDH08S60C JESD22
    Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDH08S60C PG-TO220-2 D08S60C D08S60C IDH08S60C JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior


    Original     		IDT08S60C IDT08S60C PG-TO220-2-2 D08S60C PDF

    D08S60C

    Abstract: No abstract text available
    Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDH08S60C IDH08S60C PG-TO220-2 D08S60C PDF

    D08S60C

    Abstract: IDT08S60C JESD22 D08S60 D08S
    Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior


    Original     		IDT08S60C PG-TO220-2-2 D08S60C D08S60C IDT08S60C JESD22 D08S60 D08S PDF

    D08S60C

    Abstract: IDT08S60C JESD22
    Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior


    Original     		IDT08S60C PG-TO220-2-2 D08S60C D08S60C IDT08S60C JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		IDH08S60C PG-TO220-2 D08S60C PDF