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Samtec Inc TCMD-08-S-60.00-01 Ribbon Cables / IDC Cables 2.00 mm IDC Ribbon Cable Assembly Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TCMD-08-S-60.00-01					1 $13.82 10 $13.08 100 $10.98 1000 $7.65 10000 $7.65	Get Quote
Samtec Inc TCSD-08-S-60.00-01-F-N Ribbon Cables / IDC Cables IDC Socket Cable Assemblies Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TCSD-08-S-60.00-01-F-N					1 $14.6 10 $13.82 100 $11.3 1000 $7.26 10000 $7.26	Get Quote
Samtec Inc FFMD-08-S-60.00-01 Ribbon Cables / IDC Cables .050" Tiger Eye(TM) IDC Ribbon Cable Assemblies Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	FFMD-08-S-60.00-01					1 $15.35 10 $14.24 100 $11.46 1000 $7.98 10000 $7.98	Get Quote
Samtec Inc TCSD-08-S-60.00-01 Ribbon Cables / IDC Cables IDC Socket Cable Assemblies Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TCSD-08-S-60.00-01					1 $15.6 10 $14.77 100 $12.07 1000 $7.76 10000 $7.76	Get Quote
Samtec Inc TCSD-08-S-60.00-01-N Ribbon Cables / IDC Cables IDC Socket Cable Assemblies Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TCSD-08-S-60.00-01-N					1 $15.6 10 $14.77 100 $12.07 1000 $7.76 10000 $7.76	Get Quote

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D08S60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IDT08S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark QC 19 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 8 A • Temperature independent switching behavior I F @ T C < 100 °C	Original	IDT08S60C PG-TO220-2-2 20mA2)	PDF
D08S60C Abstract: IDH08S60C JESD22 Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH08S60C PG-TO220-2 D08S60C D08S60C IDH08S60C JESD22	PDF
Untitled Abstract: No abstract text available Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior	Original	IDT08S60C IDT08S60C PG-TO220-2-2 D08S60C	PDF
D08S60C Abstract: No abstract text available Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH08S60C IDH08S60C PG-TO220-2 D08S60C	PDF
d08s60 Abstract: diode 8a 600v Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery	Original	SDT08S60 PG-TO220-2-2. Q67040S4647 D08S60 d08s60 diode 8a 600v	PDF
D08S60C Abstract: IDT08S60C JESD22 D08S60 D08S Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior	Original	IDT08S60C PG-TO220-2-2 D08S60C D08S60C IDT08S60C JESD22 D08S60 D08S	PDF
D08S60C Abstract: IDT08S60C JESD22 Text: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior	Original	IDT08S60C PG-TO220-2-2 D08S60C D08S60C IDT08S60C JESD22	PDF
Schottky diode TO220 Abstract: Q67040S4647 SDT08S60 D08S60 Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery	Original	SDT08S60 PG-TO220-2-2. D08S60 Q67040S4647 PG-TO-220-2-2 Schottky diode TO220 Q67040S4647 SDT08S60 D08S60	PDF
Schottky diode TO220 Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647 Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery	Original	SDT08S60 P-TO220-2-2. D08S60 Q67040S4647 Schottky diode TO220 SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647	PDF
Untitled Abstract: No abstract text available Text: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH08S60C PG-TO220-2 D08S60C	PDF
Untitled Abstract: No abstract text available Text: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery	Original	SDT08S60 PG-TO220-2-2. Q67040S4647 D08S60	PDF