D08S60 Search Results
D08S60 Price and Stock
onsemi FFD08S60S-F085DIODE STANDARD 600V 8A TO252AA |
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FFD08S60S-F085 | Reel |
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FFD08S60S-F085 | Reel | 2,500 |
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FFD08S60S-F085 | 143 Weeks | 2,500 |
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FFD08S60S-F085 | 143 Weeks | 2,500 |
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Samtec Inc IDMD-08-S-60.00SLIM BODY DOUBLE-ROW IDC MALE AS |
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IDMD-08-S-60.00 | Bulk | 1 |
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Samtec Inc IDSD-08-S-60.00INSULATION DISPLACEMENT TERMINAL |
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Samtec Inc TCSD-08-S-60.00-012MM DOUBLE ROW FEMALE IDC ASSEMB |
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TCSD-08-S-60.00-01 | Bulk | 1 |
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Samtec Inc FFMD-08-S-60.00-01.050 CABLE PLUG |
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D08S60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IDT08S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark QC 19 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 8 A • Temperature independent switching behavior I F @ T C < 100 °C |
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IDT08S60C PG-TO220-2-2 20mA2) | |
D08S60C
Abstract: IDH08S60C JESD22
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IDH08S60C PG-TO220-2 D08S60C D08S60C IDH08S60C JESD22 | |
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Contextual Info: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior |
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IDT08S60C IDT08S60C PG-TO220-2-2 D08S60C | |
D08S60CContextual Info: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDH08S60C IDH08S60C PG-TO220-2 D08S60C | |
d08s60
Abstract: diode 8a 600v
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SDT08S60 PG-TO220-2-2. Q67040S4647 D08S60 d08s60 diode 8a 600v | |
D08S60C
Abstract: IDT08S60C JESD22 D08S60 D08S
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IDT08S60C PG-TO220-2-2 D08S60C D08S60C IDT08S60C JESD22 D08S60 D08S | |
D08S60C
Abstract: IDT08S60C JESD22
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IDT08S60C PG-TO220-2-2 D08S60C D08S60C IDT08S60C JESD22 | |
Schottky diode TO220
Abstract: Q67040S4647 SDT08S60 D08S60
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SDT08S60 PG-TO220-2-2. D08S60 Q67040S4647 PG-TO-220-2-2 Schottky diode TO220 Q67040S4647 SDT08S60 D08S60 | |
Schottky diode TO220
Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
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SDT08S60 P-TO220-2-2. D08S60 Q67040S4647 Schottky diode TO220 SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647 | |
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Contextual Info: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior |
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IDH08S60C PG-TO220-2 D08S60C | |
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Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery |
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SDT08S60 PG-TO220-2-2. Q67040S4647 D08S60 |