Untitled
Abstract: No abstract text available
Text: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Terminal Blocks & Strips > Product Feature Selector > Product Details D0625 Product Details
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D0625
D0625
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r2a3
Abstract: r1a10 M1367 M4589
Text: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.
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OCR Scan
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THMY728010BEG-80L
THMY728010BEG
608-word
72-bit
TC59S6408BFTL
72-bit
r2a3
r1a10
M1367
M4589
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18f24k22
Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology 2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •
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PIC18
F2X/4XK22
28/40/44-Pin,
DS41412B
DS41412B-page
18f24k22
PIC18f45k22 example C18 codes
pic18F26K22 example C codes
pic18F44K22
PIC18F45K22
PIC18f46k22 example C18 codes i2c
pin diagram of PIC18f45k22
pin diagram of PIC18LF45k22 embedded microcontroller
PIC18FXXK22
PIC18 example C18 codes spi
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AD82201
Abstract: AD8221 AD8222 AD8228 AD8251 DA810
Text: 10 MHz, 20 V/ s, G = 1, 2, 4, 8 iCMOS Programmable Gain Instrumentation Amplifier AD8251 FEATURES FUNCTIONAL BLOCK DIAGRAM DGND WR Small package: 10-lead MSOP Programmable gains: 1, 2, 4, 8 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V
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AD8251
10-lead
RM-10)
AD8251ARMZ
AD8251ARMZ-RL
AD8251ARMZ-R7
AD8251-EVALZ
AD82201
AD8221
AD8222
AD8228
AD8251
DA810
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pin diagram of PIC18f45k22
Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology 2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •
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Original
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PIC18
F2X/4XK22
28/40/44-Pin,
DS41412D
DS41412D-page
pin diagram of PIC18f45k22
PIC18F45K22
18F25K22
pic18F26K22 example C codes
PIC18F26k22
PIC18F k22
PIC18LF26K22
PIC18F46K22
DS41412D
PIC18FXXK22
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tfk 136
Abstract: No abstract text available
Text: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY6416C1BEG-80L
216-WORD
64-BIT
THMY6416C1BEG
TC59S6408BFT
64-bit
THMY6416C1BEG)
tfk 136
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ADuM1233
Abstract: No abstract text available
Text: Isolated, Precision Half-Bridge Driver, 0.1 A Output ADuM1233 FEATURES GENERAL DESCRIPTION Isolated high-side and low-side outputs High side or low side relative to input: ±700 VPEAK High side/low side differential: 700 VPEAK 0.1 A peak output current High frequency operation: 5 MHz maximum
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ADuM1233
16-lead
UL1577
ADuM12331
RW-16)
ADuM1233BRWZ
ADuM1233BRWZ-RL1
13-inch
ADuM1233
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M1110
Abstract: D004 ic P155
Text: M1110 Parallel Ein-/Ausgabe Box Beckhoff II/O-System M1110 Parallel Ein-/Ausgabe Box Technische Beschreibung Eiserstraße 5 33415 Verl Datum 05.05.94 Telefon 05246/709-0 Telefax 05246/70980 Version 2.1 Seite 1 von 17 M1110 Parallel Ein-/Ausgabe Box Beckhoff II/O-System
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M1110
M1110
D12-4
D11-1
D11-2
D11-3
D11-4
D10-1
D10-2
D004 ic
P155
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TS189
Abstract: No abstract text available
Text: M i c r o c h PIC17C4X i p High-Performance 8-Bit CMOS EPROM/ROM Microcontroller Pin Diagram Devices included in this data sheet: • PIC17CR42 PDIP, CERDIP, Windowed CERDIP • PIC17C42A VDD RC0/AD0 RC1/AD1 RC2/AD2 RC3/AD3 RC4/AD4 RC5/AD5 RC6/AD6 RC7/AD7
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OCR Scan
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PIC17C4X
PIC17CR42
PIC17C42A
PIC17C43
PIC17CR43
PIC17C44
RD2/AD10
RD3/AD11
DS30412C
TS189
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D018
Abstract: D019 D032
Text: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.
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OCR Scan
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THMY51E10C70
THMY51E10C70,
THMY51E10C75,
THMY51E10C80
864-word
72-bit
TC59SM804CFT
D018
D019
D032
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Intel 1103 DRAM
Abstract: D03B intel 1103 ram D018 D019 D032
Text: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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Y6432G1EG-80
432-WORD
64-BIT
THMY6416E1BEG
TC59SM708FT
64-bit
Intel 1103 DRAM
D03B
intel 1103 ram
D018
D019
D032
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D018
Abstract: D019 D032 D051 THMY51E10B70
Text: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.
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OCR Scan
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THMY51E10B70
864-WORD
72-BIT
THMY51E10B
TC59SM804BFT
72-bit
aY51E10B70
D018
D019
D032
D051
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Untitled
Abstract: No abstract text available
Text: WSB06200AT High Voltage Power Schottky Rectifier HIGH VOLTAGE SCHOTTKY 6 AMPERES 200 VOLTS Features: *Plastic Package Has Underwriters Laboratory Flammability Classifications 94V-0. *Metal Silicon Junction, Majority Carrier Conduct. *Low Reverse Leakage Current.
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WSB06200AT
O-220AB
MIL-STD-750,
24grams
O-220AB
WSB06200AT
D0620
300us
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17C756A
Abstract: DS30289B PIC17C7XX PIC17C752 PIC17C756A PIC17C762 PIC17C766 17C762 DS30246A Transistor BAR
Text: PIC17C7XX High-Performance 8-bit CMOS EPROM Microcontrollers with 10-bit A/D • Only 58 single word instructions to learn • All single cycle instructions 121 ns , except for program branches and table reads/writes which are two-cycle • Operating speed:
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PIC17C7XX
10-bit
PIC17C752
PIC17C756A
PIC17C762
PIC17C766
DS30289B-page
17C756A
DS30289B
PIC17C7XX
PIC17C752
PIC17C756A
PIC17C762
PIC17C766
17C762
DS30246A
Transistor BAR
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY721661
BEG-80
216-WORD
72-BIT
THMY721661BEG
TC59S6408BFT/BFTL
72-bit
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Untitled
Abstract: No abstract text available
Text: TO SH IB A THMY728071BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728071BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY728071BEG-80
72-BIT
THMY728071BEG
608-word
TC59S6408BFT/BFTL
72-bit
THMY728071BEG)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7280D1EG-80H TENTATIVE T O SH IB A H YBRID D IG ITA L IN TEG R A T ED CIRCU IT 8,388,608-W ORD BY 72-BIT SYNCHRONOUS DRAM M O DULE DESCRIPTION The THMY7280D1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY7280D1EG-80H
72-BIT
THMY7280D1EG
608-word
TC59S6408FT
72-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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MY7216E1
BEG-80
216-WORD
72-BIT
THMY7216E1BEG
TC59S6408BFT
72-bit
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Untitled
Abstract: No abstract text available
Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s
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OCR Scan
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EDI8F64128C
128KX64
EDI8F64128C
128Kx8
EDI8F64128C15MDC
EDI8F64128C20MDC
EDI8F64128C25MDC
01581USA
EDBF864128C
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OQ45
Abstract: D018 D019 D032
Text: TOSHIBA THMY7216D0CEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216D0CEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404CFT DRAMs and PLL/Registers on a printed circuit board.
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OCR Scan
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Y7216D0CEG-75
216-WORD
72-BIT
THMY7216D0CEG
TC59S6404CFT
168-pin
PC133
PC100
OQ45
D018
D019
D032
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LA3375
Abstract: LA3373 "vacuum tube" tA3373 13300P LA2110 LA2113 AC voltmeter applications scaj la2113f
Text: ^ Ofdering number :EN 1128F ] SAMYO F LA3373 N0.1128F M o n o l i t h ic L in e a r IC P i l o t C a n c e l - P r o v i d e d PLL FM MPX D e m o d u l a t o r f o r Car S t e r e o s i unctionè The LA3373 is a DIP-16 package version of the LA3375 th a t/çôn t a ife
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OCR Scan
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1128F
1128F
LA3373
LA3373
DIP-16
LA3375
300mV
20usec/div,
IiA3373
19kHz
"vacuum tube"
tA3373
13300P
LA2110
LA2113
AC voltmeter applications
scaj
la2113f
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THM73V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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OCR Scan
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THM73V8015ATG-4f-5
608-WORD
72-BIT
THM73V8015ATG
TC5165805AFT
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toshiba S-AU
Abstract: TC5165805
Text: TO SHIBA THM73V1635ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 73V1635ATG is a 16,777,216-word by 72-bit dynam ic R A M module consisting of 18 T C 5164405A F T D R A M s on a printed circu it board. This module is optimized for applications w hich
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OCR Scan
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216-WORD
72-BIT
THM73V1635ATG-4f-5
73V1635ATG
164405A
toshiba S-AU
TC5165805
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PDF
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ra2b
Abstract: No abstract text available
Text: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.
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OCR Scan
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864-WORD
72-BIT
THMY7264E0LEG-75
THMY7264E0LEG
TC59SM704FT
72-bit
THMY7264E0LEG)
ra2b
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