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Catalog Datasheet	Type	Document Tags	PDF
tc 97101 Abstract: D472 Text: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out	OCR Scan	MT9LD272 MT18LD472 168-pin, 048-cycle T18LCW tc 97101 D472	PDF
TME 87 Abstract: 1ZD12 tme 126 30 oc9 002 Text: ^EDI EDI8F6432C ß fC T R O M C D ESGNS. M C 32Kx64 SRAM Module 32Kx64 Static RAM High SpeedCMOS Cache Memory/Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based	OCR Scan	256KB 66MHz CELP2X80CS3Z48 EDI8F6432C 32Kx64 EDI8F6432C EDI8F6432C15MDC EDI8F6432C20MDC TME 87 1ZD12 tme 126 30 oc9 002	PDF
Untitled Abstract: No abstract text available Text: " H Y U H D A I — • HYM5V64404C K-Series Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V64404C K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V16404C in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy	OCR Scan	HYM5V64404C 4Mx64 4Mx64-bit HY51V16404C HYM5V64404CKG/CTKG 168-Pin 256ms A0-A11) DQ0-63)	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH1 S64CXJJ-12,-15 67108864-B IT 1048576-W Q RD BY 64-BIT SynchronousDRAM DESCRIPTION The MH1S64CXJJ is 1048576-word by 64-bit Synchronous DRAM module. This consists of four industry standard 1Mx16 Synchronous DRAMs in	OCR Scan	S64CXJJ-12 67108864-B 048576-W 64-BIT MH1S64CXJJ 1048576-word 64-bit 1Mx16 83MHz 67MHz	PDF
Untitled Abstract: No abstract text available Text: HYUNDAI HYM5V72A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM 5V 72A 214A is a 2M x 72-bit EDO m ode C M O S DRAM module consisting of nine H Y51V 17804B in 28 28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pm glass-epoxy printed circuit board. 0 ln F and 0.01 uF	OCR Scan	HYM5V72A214A 72-bit 17804B A0-A10) 1EC07-10-JAN96 5V72A	PDF
bt 1690 transistor Abstract: bt 1696 lc 945 p transistor NPN TO 92 bt 1690 philips of bt 1696 bt 1696 transistor lc 945 p transistor C 3355 transistor transistor bt 667 transistor 2028 Text: Philips Semiconductors Product specification PNP 5 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION <01 ' / SLE D • g BFQ51 711GflBb 0D454fc>7 421 B I P H I N PINNING PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF	OCR Scan	BFR90A. BFQ51 711GflBb 0D454fc bt 1690 transistor bt 1696 lc 945 p transistor NPN TO 92 bt 1690 philips of bt 1696 bt 1696 transistor lc 945 p transistor C 3355 transistor transistor bt 667 transistor 2028	PDF
CLAA141XB01 Abstract: 71-22T00-D03 TLR303 LP141X5 cy4h Z768 LP133X7 IK04 JC283 ht13x Text: Schematic Diagrams Appendix B: Schematic Diagrams Mainboard 71-22T00-D03 Sheet 1 of 31 OVCCT H 03 635 l U ifl AMO S _ d A l i _AW L S _-£iA2_AMU \ ;iA * . . \ _ AfcLUL V_ H M 2 _ AL2_ \ _ HAJL1G_Afctfe. _ K _ H A I l i t _ A tti\ . H A lL i. AkL	OCR Scan	71-22T00-D03) MDI12 HA122_ HAH21, RB751V PR104 DTC114EUA PC105 2N7002 PC112 CLAA141XB01 71-22T00-D03 TLR303 LP141X5 cy4h Z768 LP133X7 IK04 JC283 ht13x	PDF
FS DMO 365 RN Abstract: mxj A1 connector LS 2027 audio amp MA81C WDA42 lx4 d09 st3pc 13T4 0601N D1661 Text: Model : F17P R:1 Intel Pentium 4 LGA775 +PT880+VIA8235 C E PCB STACK UP LAY1 LAY 2 LAY 3 LAY 4 LAY 5 LAY 6 LAY 7 LAY 8 LAY 9 LAY10 TOP GND INI IN2 GND1 VCC IN3 IN4 GND2 BOTTOM Revision History A O R IG IN A L RE LEA SE fe . cCL V?, o . ^ •Pff' j L	OCR Scan	LGA775) PT880 VIA8235 LAY10 -F4011 35-A05502-00A F17P-PCB-IV-LED -E4985 F17P-PCB 35-A05002-00D FS DMO 365 RN mxj A1 connector LS 2027 audio amp MA81C WDA42 lx4 d09 st3pc 13T4 0601N D1661	PDF
Untitled Abstract: No abstract text available Text: HYMA6V32730E14HGTG 32MX72, 3.3V, 4K Ref, EDO Description The HYMA6V32730E14HGTG familiy is an 32Mx72 bits Dynamic RAM Module which is assembled 36 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package and 8bit driver IC in	OCR Scan	HYMA6V32730E14HGTG 32MX72, HYMA6V32730E14HGTG 32Mx72 16Mx4bit 32pin 16bit 48pin 20pin 168pin	PDF
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM364V41 OAK/AS KMM364V41 OAK/AS Fast Page Mode 4Mx64 DRAM DIMM , 2K Refresh, 3.3V G EN E R A L D ES C R IPTIO N FEATURES The Samsung KMM364V410A is a 4M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364V410A consists of sixteen CMOS	OCR Scan	KMM364V41 4Mx64 KMM364V410A 300mil 48pin 168-pin	PDF