D 337 TRANSISTOR Search Results

marking code CSK

Abstract: transistor marking CSK AD004-00 AD004-02
Contextual Info: H Y - L IN E Sensor-Tec Vertriebs GmbH Inselkammerstraße 10 D-82008 Unterhaching Tel.: 089 / 614 503 30 Tel.: 0 8 9 /6 1 4 09 60 S E N S O R - T E C RS 337-7381, 337-7397, 337-7410 GMR Digital Magnetic Field Sensors AP Series NVE s GMR Digital Magnetic Field Sensors offer unique

Transistor 337

Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
Contextual Info: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbSS^Sl QQ 3 Q 337 b54 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overioa<y>rotected logic level power

c 337 25

Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
Contextual Info: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt

HP 316J

Abstract: HP-316J H BRIDGE inverters circuit diagram using igbt single phase inverter IGBT driver IGBT DRIVER Analog Devices 1 phase inverter using igbt 50V 5A datasheet IGBT driver IC with PWM output SEMIKRON full bridge inverter 3 phase IGBT gate driver 3 phase rectifier circuit diagram igbt
Contextual Info: HIGH POWER FOUR CHANNEL IGBT DRIVER IC S. Pawel*, J. Lehmann*, R. Herzer*, M. Netzel* Semikron Elektronik GmbH; Sigmundstrasse 200, D-90431 Nuernberg; Germany; Tel. +49-911-6559-406; FAX +49-911-6559-337;e-mail r.herzer@semikron.com; * TU Ilmenau, PF 10 05 65, D-98684 Ilmenau; Germany

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

BUV27

Abstract: BUV27A
Contextual Info: PHILIPS INTERNATIONAL MSE D E3 711002b 00310Ô1 5 E3PHIN BUV27 BUV27A 7^ 337/ SILICON POWER TRANSISTO RS High-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.

BC337

Abstract: TRANSISTOR BC338 bc337 fairchild TRANSISTOR bc337 40 BC-337 bc337 transistor BC338-25 BC337 NPN transistor NPN TRANSISTOR BC337 40 BC337 hfe
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 328 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

Transistor 337

Abstract: BD335 BD337 c 337 25 IM 337 BD331 12 v transistors 337 bd338 OF IC 337 T3329
Contextual Info: BD331; 333 BD335; 337 J^ P hilips international » sle • tiigöel DüMSflöb aas « p h i n SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered

Contextual Info: N AtlER P H I L I P S / D I S C R E T E SSE D • b b S B IB l 001^337 1 ■ Surface Mount Devices GENERAL PURPOSE TRANSISTORS, PNP TYPE PACKAGE RATINGS hpe VCEO V VCBO V min/max. at Iq A/c e mA/V mA VCE sat max. atfc/lQ V mA/mA ' H typ mh2 , PINOUT ; SEE 7

TM4C1231E6PZ

Abstract: xa smd rtd simulator T 4512 H diode sbfx 34
Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1231E6PZ Microcontroller identical to LM4F112E5QC D ATA SH E E T D S -T M 4C 1231 E 6 P Z - 1 4 6 0 2 . 2 6 4 8 S P M S 337 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

b0335

Abstract: B0337 b0333 OF IC 337 transistor 337 b0332 D 337 TRANSISTOR ICM 72131 BD335 tr 337
Contextual Info: BD331; 333 BD335; 337 J y P HILIPS INTERNATIONAL SLE ]> • 711002b DDMSflab 2 3 5 ■ PHI N T S IL IC O N D A R L IN G T O N P O W E R T R A N S IS T O R S N-P-N epitaxial base transistors in m onolithic Darlington circu it fo r audio ou tput stages and general

TRANSISTOR 237b

Abstract: TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B
Contextual Info: BHARAT ELEK/SE niC OND DI 4?E D • 143S3TÛ □□□□OCH 2Tb ■ VCE Si Device No 37. 38. 39. 40. 41. BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 V h FE VCEO VCBO Volts min Volts mm Volts min at bias mtn /max 45 25 25 25 25 50 30 30 30 30 5 5 5 5 5

c33725

Abstract: c33740 Bc337
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1

C 337-40

Abstract: c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337
Contextual Info: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328

c 337 25

Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
Contextual Info: NPN Silicon AF Transistors BC 337 BC 338 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 PNP ● 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338

b0333

Abstract: Transistor 337 B0337 BD335 TRANSISTOR OF IC 337 BD331 b0335 IM 337 BD334 BD338
Contextual Info: BD331; 333 BP335; 337 J ^ SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered

BD331

Abstract: BD335 TRANSISTOR BD338
Contextual Info: BD331; 333 BD335; 337 _ SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered

Contextual Info: BC337, BC338 Small Signal Transistors NPN TO-92 _ FEATURES_ NPN Silicon Epitaxial Planar Transistors for switching and am plifier applications. Especially suitable for AF-driver stages and low power output stages. .098 ( 2 . 5 ) *

pin configuration PNP transistor BC327

Abstract: BC327 BC337 noise figure BC338/BC328 tr bc 337 BC337 pnp transistor BC337A BC327 NPN transistor configuration BC327 pin out bc-337 TRANSISTOR tr bc 337 datasheet
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers

pin configuration PNP transistor BC327

Abstract: BC337 pnp transistor BC327 BC337 noise figure BC327 noise figure BC 114 transistor NPN 337 BC338/BC328 BC327 NPN transistor configuration TRANSISTOR BC 135 BC328 NPN
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

BSS125

Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line
Contextual Info: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)

TRANSISTOR BC 327

Abstract: h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 BC327 transistor 327
Contextual Info: *B C 3 2 7 BC328 NP SILICON TRANSISTORS, EPITAXIAL PLANAR R A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X ompl. of BC 337 and BC 338 îf; Preferred device Dispositif recommandé he BC 327 and BC 328 transistors are intended fo r a ide variety o f medium power AF am plifier and switlin g application ; they are particulary useful as