7Z77499 Search Results

Contextual Info: it N AFTER PHILIPS/DISCRETE 2SE I> bb53T31 001A7S1 3 • BUS23 SERIES T - 2 3 -'IS' SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: N ANER PHILIPS/DISCRETE ESE D 1^53=131 0011721 T • BDT41F;41AF; BDT41BF;41CF T -33-0? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT42F, BDT42AF, BDT42BF, and BDT42CF.

131H

Abstract: BUW131 BUW131A BUW131H W 502 131a
Contextual Info: II DEVELOPMENT DATA • bbS3<=i31 OO^D21 4 " BUW131 SERIES This data sheet contains advance information and specification! are subject to change w ithout notice. I I _ N AMER PHILIPS/DISCRETE 2SE D _ T - 33 - / 3 NPN SILICON POWER TRANSISTORS

BUS133

Abstract: BUS133A BUS133H TO3 philips
Contextual Info: rr • DEVELOPM ENTDATA T his data sheet contains advance Information and specifications are subject to change w ithout notice, ^53=131 0010703 S ■ 11 BUS133 S E R IE S N AMER PHILIPS/DISCRETE 5SE D — T - 3 S - 15SIL IC O N D IFFU SED PO W ER T R A N S IS T O R S

Wf VQE 23 F

Abstract: WF VQE 23 E WF VQE 12 WF VQE 13 wf vqe 23 TIP42AF TIP41 41AF wf vqe 14 e TIP42CF
Contextual Info: TIP41F; 41AF TIP41BF; 41CF PHILIPS INTER N A T I O N A L SbE ]> • 711DôEb 004352b TOS ■ P H I N T~33 ~ 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.

Contextual Info: I N AUER PHILIPS/DISCRETE bb53^31 0016635 1 2SE D BUT21B BUT21C T - S 3 - I 3 _ - SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a TO-220 envelope w ith electrically isolated seating plane, intended fo r use in converters, inverters, switching regulators, motor control

711D

Contextual Info: PHILIPS INT ER NATIONAL Philips Components • 711002b 00M33bû bT2 « P H I N BDV65F/65AF/65BF/65CF Data sheet status SbE ]> Product specification NPN Silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3

b0951

Abstract: BD951 b0949 B0950 LL90 BD949 BD950 BD953 BD955 IEC134
Contextual Info: BD949; 951 BD953; 955 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. W ith th e ir p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.

BUX98A

Abstract: BUX98 BUX98-BUX98A TO3 philips
Contextual Info: 11 N AMER PHILIPS/DISCRETE ESE » ^53^31 GOnCHB 7 BUX98 BUX98A T -3 3 -/5 " StLICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envefope, intended for use in converters, inverters, switching regulators, motor control systems etc.

BDV65CF

Contextual Info: Philips Com ponents BDV65F/65AF/65BF/65CF D a ta s h e e t statu s Product specification d a te o f issue December 1990 NPN silicon Darlington power transistors PINNING - SOT199 DESCRIPTION PIN NPN epitaxial base transistors in a monolithic Darlington circuit for

BD953

Contextual Info: BD949; 951 BD953; 955 y v . SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and for switching applications.

FT501

Contextual Info: BD949; 951 BD953; 955 5bE D PHILIPS INTERNATIONAL • 711002b □ 0 4 3 0 t]fl b^7 H P H I N T-J3-H SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic T 0-22 0 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended for use in a wide range of power amplifiers and for switching applications.

BD243

Abstract: B0243C bd243c BD243A BD243B BD244 BD244C
Contextual Info: N AMER PHILIPS/DISCRETE - S5E D • UhS3T31i 0011413 T ■ ' BD243; BD243A BD243B: BD243C I ^ J T-33-jj SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in general am plifier and switching applica­

BUS23

Abstract: t-33-15 BISCR BUS23B BUS23C
Contextual Info: [[ N AMER P H I L I P S / D I S C R E T E asE D bbSB'IBl C 018751 3 • J BUS23 SERIES s. -r-2 3 -1 6 * SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

1U105

Abstract: BDV91 BDV93 BDV92 BDV94 BDV95 BDV96
Contextual Info: BDV91 BDV93 BDV95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDV92, BDV94 and BDV96.

BDT29

Abstract: BDT29B BDT30 IEC134 TIP29 BDT21
Contextual Info: 11 N AMER PHILIPS/DISCRETE SSE D • ¡3^53^31 G G I U S B & M BDT29; 29A BDT29B; 29C T - 3 3 - 0 7 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur. P-N-P complements are B D T 3 0 series.

BUV47

Abstract: BUV47A
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUV47; BUV47A High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, switching regulators, m o to r c o n tro l systems etc.

WF VQE 13

Abstract: BDX63B wf vqe 14 e BDX63 WF VQE 11 E BDX62 WF vqe 13 D Wf vqe 14 WF VQE 12 BDX62A
Contextual Info: N AMER PHILIPS/DISCRETE ESE D • D O in S ? b ■ BDX63; 63A BDX63B; 63C T -3 S -3 L 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BDX62A,

BUV83

Abstract: BUV82
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • aoiöw m BUV82 BUV83 r - 3 3 -1 3 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic S O T 9 3 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

BUV98A

Abstract: BUV98 BUV98AV BUV98V
Contextual Info: II N AMER PHILIPS/DISCRETE bTE J> • bbSB'iBl DQ2flSD3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in th e isolated ISOTOP package; intended fo r use in inverters, converters and m o to r c o n tro l applications on 220 V to 38 0 V m ains supplies.

Contextual Info: TIP130 TIP131 TIP132 PHILIPS INTERNATIONAL SbE J> • 7110fl2t, D 0 4 3 5 7 4 7bô ¿ P H I N = 7^ 3 3 - 2. SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T 0 -2 2 0 A B plastic envelope. P-N-P equivalents are TIP135,

BD949

Abstract: BD949 philips bd955 BD951 BD953 b0949 b0951 BD950 D102I
Contextual Info: BD949; 951 BD953; 955 J PHILIPS INTERNATIONAL 5bE D • 711002b 00430^0 bT? ■ P HIN 7 ^ 7 3 - / / SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic T 0 -2 2 0 envelope. W ith their p-n-p complements BD950; 95 2 ; 9 5 4 and 9 5 6 they are intended for use in a wide range o f power amplifiers and for switching applications.

Contextual Info: P h ilip s S e m ico n d u cto rs P ro d u c t sp e cifica tio n Silicon diffused power transistors BUW12; BUW12A High-voltage, high-speed, glass-passivated npn power transistors in a S O T 9 3 envelope, intended fo r use in converters, inverters, sw itching regulators, m otor control systems etc.

V27AF

Contextual Info: PHILIPS INTERNATIONAL mse: » 7 iiQasb 0031005 t b IPHIN BUV27F BUV27AF o SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control