bd950
Abstract: 80954 b0952 B0950 BD949 BD954 USA060-1
Contextual Info: BD950; 952 BD954; 956 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. W ith the ir n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.
|
OCR Scan
|
BD950;
BD954;
T0-220
BD949;
BD950J
O-22cturer
BD950
Z82145
7Z82142
80954
b0952
B0950
BD949
BD954
USA060-1
|
PDF
|
b0951
Abstract: BD951 b0949 B0950 LL90 BD949 BD950 BD953 BD955 IEC134
Contextual Info: BD949; 951 BD953; 955 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. W ith th e ir p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.
|
OCR Scan
|
BD949;
BD953;
O-220
BD950;
BD949
BD951
BD953
BD955
O-220.
7Z82141
b0951
b0949
B0950
LL90
BD950
BD955
IEC134
|
PDF
|
b0948
Abstract: BD944 B0943 BD943 b0944 b0946 BD946 BD948
Contextual Info: dPO ^b BD944 BD946 BD948 A SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE D A T A
|
OCR Scan
|
BD944
BD946
BD948
BD943;
BD944
BD948.
7Z82139
b0948
B0943
BD943
b0944
b0946
BD946
BD948
|
PDF
|