CY7C123 Search Results

TP 152N

Abstract: CI23 k7315 2A mosfet igbt driver stage as256words CY7C123
Contextual Info: MbE D CYPRESS SEMICONDUCTOR E3 2 S 0 ciL.iJ2 D D O b B I R 7 C l C Y P CY7C123 CYPRESS SEMICONDUCTOR Functional Description 256 x 4 static RAM for control store in high-speed computers CMOS foroptimum speed/power High speed — 7 ns commercial — 10 ns (military)

16X64

Abstract: C123-6 c1235 P13A C1232
Contextual Info: CY7C123 256 x 4 Static RAM Features tion operation ensures minimum write re­ covery times by eliminating the “write re­ covery glitch.” Functional Description • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power

CY7C1231H

Abstract: CY7C1231H-133AXI
Contextual Info: CY7C1231H 2-Mbit 128K x 18 Flow-Through SRAM with NoBL Architecture Features Functional Description[1] • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™

Contextual Info: CY7C123 ^ ^ ^ 5 * Æ C T Y P R K S .S ~ SEMICONDUCTOR 256 x 4 Static R/W RAM Features Functional Description • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military)

C123

Abstract: CY7C123 P13A
Contextual Info: CY7C123 256 x 4 Static RAM Features Functional Description • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial The CY7C123 is a high-performance CMOS static RAM organized as 256 words by 4 bits. Easy memory expansion is provided by an active LOW chip select one (CS1) input, an active

Contextual Info: CY7C123 CYPRESS SEMICONDUCTOR Features • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial) — 825 mW (military) •

Contextual Info: CY7C123 CYPRESS SEMICONDUCTOR F eatures F unctional D escription • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial )

CY7C123

Contextual Info: CY7C123 •* CYPRESS Features 256 X 4 Static RAM Functional D escription • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial)

Contextual Info: CY7C1231F 2-Mb 128K x 18 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™

Contextual Info: CY7C1231H 2-Mbit 128K x 18 Flow-Through SRAM with NoBL Architecture Features Functional Description[1] • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™

1k SRAM

Abstract: CY7C182-PC EME-6300H CY7C123
Contextual Info: Qualification Report March 1995, QTP# 93351 Version 1.0 CY7C123 256 x 4 Static R/W RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 001-00207 Spec Title: CY7C1231H 2-Mbit 128K x 18 Flow-Through SRAM with NoBL Architecture Sunset Owner: Jayasree Nayar (njy) Replaced by: None CY7C1231H 2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture Features

c 1237

Contextual Info: _ CY7C123 SEMICONDUCTOR 256 x 4 Static R/W RAM F eatures F unctional D escription • 2 5 6 x 4 s ta tic RAM for co n tro l sto re in h igh -sp eed com p u ters • C M O S for o p tim u m sp eed /p ow er • H igh speed T h e CY7C123 is a high-perform ance

Contextual Info: CY7C123 rS CYPRESS 256 x 4 Static RAM Functional D escription Features • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial)

A101

Abstract: CY7C1231F CY7C1231F-100AC CY7C1231F-117
Contextual Info: CY7C1231F 2-Mbit 128K x 18 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™

Contextual Info: CY7C1231F 2-Mbit 128K x 18 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™

CY7C169

Abstract: 54600
Contextual Info: Thermal Management CYPRESS Part Number CY7B173 CY7B174 CY7B180 CY7B181 CY7B185 CY7B186 CY7B191 CY7B192 CY7B194 CY7C122 CY7C123 CY7C128 CY7C128A CY7C130 CY7C131 CY7C132 CY7C136 CY7C140 CY7C141 CY7C142 CY7C146 CY7C147 CY7C148 CY7C149 CY7C150 CY7C157 CY7C161A

CY7C123

Abstract: 7C123
Contextual Info: CY7C123 •* C Y P R E S S 256 X 4 Static RAM Features Functional D escription • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 1 0 ns (military) • Low power — 660 mW (commercial)

A101

Abstract: CY7C1231F CY7C1231F-100 CY7C1231F-100AC CY7C1231F-117
Contextual Info: CY7C1231F 2-Mbit 128K x 18 Flow-through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 117-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™

CY7C1231H

Abstract: CY7C1231H-133AXI
Contextual Info: CY7C1231H 2-Mbit 128K x 18 Flow-Through SRAM with NoBL Architecture Features Functional Description[1] • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™

Contextual Info: CY7C1231H PRELIMINARY 2-Mbit 128K x 18 Flow-Through SRAM with NoBL Architecture Functional Description[1] Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™

Contextual Info: CY7C123 CYPRESS SEMICONDUCTOR Features Functional Description • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 10 ns (military) • Low power — 660 mW (commercial)

Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR 256 X 4 Static R /W R A M Features Functional Description • 256 x 4 static RA M for control store in high speed computers T he CY7C123 is a high perform ance CM O S static R A M organized as 256 w ords x 4 bits. E asy m em ory expansion

C123

Abstract: CY7C123 CY7C123-15DMB
Contextual Info: CY7C123 256 x 4 Static RAM Features D Functional Description 256 x 4 static RAM for control store The CY7C123 is a highĆperformance CMOS static RAM organized as 256 words by 4 bits. Easy memory expansion is provided by an active LOW chip select one CS1 input, an active HIGH chip select