c7343 CAPACITOR
Abstract: Venkel CR0603 10W tsw-107-14-g-d-006 ESR C114 transistor connector SFM140L2SDLC SOT23-132 C7343 SFM140L2SDLC 9 pin RS232 to 4pin RJ11 cr0603 VENKEL
Text: TMS320VC5402 DSK BOM Item # 1 2 3 4 5 Qty 6 6 1 3 3 Ref Des CT6,CT7,CT9,CT13,CT14,CT20 CT1,CT2,CT3,CT4,CT8,CT11 CT5 CT10,CT15,CT17 CT16,CT18,CT19 Description Capacitor, 10uF, 10V, 20%, Tantalum, 6032 Capacitor, 1uF 25v low esr Capacitor, 330uF, ( 6.3V LOW ESR)
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TMS320VC5402
330uF,
150-mohm
300-mohm
C6032
C1206
C7343
c7343 CAPACITOR
Venkel CR0603 10W
tsw-107-14-g-d-006
ESR C114 transistor
connector SFM140L2SDLC
SOT23-132
C7343
SFM140L2SDLC
9 pin RS232 to 4pin RJ11
cr0603 VENKEL
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15514
Abstract: No abstract text available
Text: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiB410DK
AN609,
8029u
6830m
5384m
0019m
0110u
9058u
5505u
15514
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Untitled
Abstract: No abstract text available
Text: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si4202DY
AN609,
2175m
2923m
2439m
3089u
1542m
7069m
8017m
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14093
Abstract: 75431
Text: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si9945BDY
AN609,
3203u
3659m
8029m
3567u
2443m
3998m
0795m
14093
75431
|
Untitled
Abstract: No abstract text available
Text: SiA450DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiA450DJ
AN609,
9999u
0841m
9107m
5440m
1720u
3046u
4369m
|
77503
Abstract: No abstract text available
Text: Si5999EDU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si5999EDU
AN609,
7690u
1847m
5265m
5610m
1835m
0133m
6339u
77503
|
Untitled
Abstract: No abstract text available
Text: SiR826DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiR826DP
AN609,
6931m
8259m
0206m
8462m
3297m
8700m
1449m
|
Untitled
Abstract: No abstract text available
Text: Si4004DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si4004DY
AN609,
7091m
5039m
6331m
9944m
5460m
2019m
0747m
|
Untitled
Abstract: No abstract text available
Text: SiA915DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiA915DJ
AN609,
1970u
0902m
7854m
9117u
4934u
4698u
4306u
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si1427
Abstract: No abstract text available
Text: Si1427EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si1427EDH
AN609,
3515u
1736m
9349m
1636u
2141m
9215u
1951m
si1427
|
Untitled
Abstract: No abstract text available
Text: SQ4946AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQ4946AEY
AN609,
7463m
1668u
8534m
0272m
1833m
0708m
2266m
16-Aug-10
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Untitled
Abstract: No abstract text available
Text: SQ3460EV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQ3460EV
AN609,
5052u
3918u
0623m
6358m
7809m
7880m
4197m
03-Jan-11
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Untitled
Abstract: No abstract text available
Text: SQ4920EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQ4920EY
AN609,
0927u
7168u
4412m
6930m
2303m
7951m
18-Jun-10
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Untitled
Abstract: No abstract text available
Text: SQS401EN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SQS401EN
AN609,
1489m
4071m
1160m
9939m
0246m
4666u
5277m
2426m
|
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Untitled
Abstract: No abstract text available
Text: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFZ44S
IRFZ44L
SiHFZ44S
SiHFZ44LL
AN609,
THERMAZ44S
9021m
9076m
0860m
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Untitled
Abstract: No abstract text available
Text: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP21N60L
SiHFP21N60L
AN609,
07-Jun-10
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Untitled
Abstract: No abstract text available
Text: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFIBC40G
SiHFIBC40G
AN609,
31-May-10
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Untitled
Abstract: No abstract text available
Text: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFD014
SiHFD014
AN609,
CONFIGURA5-Oct-10
3009m
0416u
6348m
9120m
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Untitled
Abstract: No abstract text available
Text: IRLR024_RC, IRLU024_RC, SiHLR024_RC, SiHLU024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRLR024
IRLU024
SiHLR024
SiHLU024
AN609,
9731m
2316m
0467m
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Untitled
Abstract: No abstract text available
Text: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFZ48R
SiHFZ48R
AN609,
6055m
9011m
2958m
1718m
3035m
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TSS 6672-1
Abstract: No abstract text available
Text: Si2319CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si2319CDS
AN609,
26-May-10
TSS 6672-1
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Untitled
Abstract: No abstract text available
Text: SiHFZ34S_RC, SiHFZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiHFZ34S
SiHFZ34L
AN609,
4962m
9514m
4372m
1122m
6484m
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90388
Abstract: No abstract text available
Text: IRFIB7N50A_RC, SiHFIB7N50A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFIB7N50A
SiHFIB7N50A
AN609,
21-May-10
90388
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74366
Abstract: AN609 CT4 vishay SiHLD024
Text: IRLD024_RC, SiHLD024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRLD024
SiHLD024
AN609,
CONFIGURA-Oct-10
0426m
8968m
4501m
6212m
74366
AN609
CT4 vishay
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