Untitled
Abstract: No abstract text available
Text: TECHNICAL BULLETIN TB-3060 Full-Time Continuous Monitor Installation, Operation and Maintenance Figure 1. Desco Full-Time Continuous Monitor Description Leading companies use continuous monitors as a cost effective component in satisfying the paragraph 6.1.3
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TB-3060
TB-3060
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Untitled
Abstract: No abstract text available
Text: QS6K1 Transistors Switching 30V, 1.0A QS6K1 !External dimensions (Units : mm) TSMT6 Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) (3) 0.4 +0.1
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K01 equivalent
Abstract: No abstract text available
Text: QS6K1 Transistors Switching 30V, 1.0A QS6K1 zExternal dimensions (Unit : mm) TSMT6 Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) (3) 0.4 +0.1 −0.05
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Untitled
Abstract: No abstract text available
Text: QS6K1 Transistors Switching 30V, 1.0A QS6K1 zExternal dimensions (Unit : mm) TSMT6 Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) (3) 0.4 +0.1 −0.05
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Untitled
Abstract: No abstract text available
Text: QS6K1 Transistors Switching 30V, 1.0A QS6K1 zExternal dimensions (Unit : mm) TSMT6 Continuous Drain current Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) (3) 0.4 +0.1 −0.05
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DIODE l02
Abstract: code l02 2n7002 pinout marking 02J sot transistor pinout marking l02
Text: CMLDM7002A CMLDM7002AJ* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)
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CMLDM7002A
CMLDM7002AJ*
CMLDM7002AJ
2N7002
CMLDM7002A:
200mA,
DIODE l02
code l02
2n7002 pinout
marking 02J
sot transistor pinout
marking l02
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CMLDM7002AJ
Abstract: 2N7002 CMLDM7002A marking 02J
Text: CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode)
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CMLDM7002A
CMLDM7002AJ
OT-563
CMLDM7002AJ
2N7002
200mA,
400mA
CMLDM7002A
marking 02J
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DIODE l02
Abstract: dual mosfet "marking code 30" marking l02
Text: CMLDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-563 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current
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CMLDM7002A
2N7002
OT-563
500mA
500mA,
200mA
200mA,
400mA
01-February
DIODE l02
dual mosfet "marking code 30"
marking l02
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CMXDM7002A
Abstract: X02A 2N7002
Text: CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current
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CMXDM7002A
OT-26
CMXDM7002A
2N7002
500mA
500mA,
200mA
200mA,
400mA
05-December
X02A
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c702a
Abstract: No abstract text available
Text: CMPDM7002A SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current
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CMPDM7002A
2N7002
C702A
OT-23
500mA
500mA,
200mA
200mA,
c702a
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X02A
Abstract: CMXDM7002A 2N7002
Text: CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current
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CMXDM7002A
OT-26
CMXDM7002A
2N7002
500mA,
200mA
200mA,
400mA
14-November
X02A
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BR2450A
Abstract: BR2477A BR2450
Text: BR2450A/ BR2477A / • Dimensions mm ■ Dimensions(mm) 0.5 1.6 Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 550 Nominal capacity(mAh) Continuous drain(mA) 1,000 0.03 Operating temperature(˚C)
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BR2450A/
BR2477A
BR2450A
BR2450
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CR2354
Abstract: CR2330
Text: CR2330 CR2354 • Dimensions mm ■ Dimensions(mm) Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 265 Nominal capacity(mAh) Continuous drain(mA) 560 0.2 Operating temperature(˚C) -30 to +60
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CR2330
CR2354
CR2354
CR2330
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Untitled
Abstract: No abstract text available
Text: BR1225A/ BR1632A/ • Dimensions mm ■ Dimensions(mm) Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 48 0.03 Nominal capacity(mAh) Continuous drain(mA) 0.03 Operating temperature(˚C) -40 to +125
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BR1225A/
BR1632A/
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BR1632A
Abstract: br1225a
Text: BR1225A/ BR1632A/ • Dimensions mm ■ Dimensions(mm) Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 48 0.03 Nominal capacity(mAh) Continuous drain(mA) 0.03 Operating temperature(˚C) -40 to +125
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BR1225A/
BR1632A/
BR1632A
br1225a
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BS107
Abstract: BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs Drain Current Continuous (Note 1.) Pulsed (Note 2.)
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BS107,
BS107A
BS107)
BS107A)
r14525
BS107/D
BS107
BS107 application
BS107A
BS107ARL1
BS107ARLRM
BS107ARLRP
BS107RL1
BS107RLRA
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Untitled
Abstract: No abstract text available
Text: CR1216 CR1220 • Dimensions mm ■ Dimensions(mm) Chapter 2 ■ Specification ■ Specification 3 Nominal voltage(V) 3 Nominal capacity(mAh) Continuous drain(mA) 25 0.1 Nominal capacity(mAh) Continuous drain(mA) 0.1 Operating temperature(˚C) -30 to +60
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CR1216
CR1220
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smd transistor bq
Abstract: smd transistor H F BQ 20 smd transistor buk202-50y
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK202-50Y QUICK REFERENCE DATA SYMBOL PARAMETER •l Nominal load current ISO SYMBOL PARAMETER APPLICATIONS Continuous off-state supply voltage Continuous load current Continuous junction temperature
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BUK202-50Y
BUK206-50Y
smd transistor bq
smd transistor H F
BQ 20 smd transistor
buk202-50y
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Untitled
Abstract: No abstract text available
Text: Æxitxan PRODUCT DEVICES.INC. 200V, 120A, 0.03n ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE Rgs=1 .OMn GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT CONTINUOUS (Tc = 25*C) DRAIN CURRENT PULSED TOTAL POWER DISSIPATION
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OCR Scan
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MIL-STD-883
DRAIN10V
300nS.
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MPF910
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Sw itching M PF910 N-Channel — Enhancement 3 DRAIN MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 j i s Drain Current - Continuous^) - Pulsedi2) Symbol
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PF910
MPF910
O-226AE)
MFE91Q
MPF910
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Untitled
Abstract: No abstract text available
Text: B 48 9 -9 7 IFN6449, IFN6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR HIGH VOLTAGE Absolute maximum ratings at T* = 25°C IFN6449 Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation
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IFN6449,
IFN6450
IFN6449
46BbBÃ
00007bÃ
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L3705N
Abstract: 1RLZ34N l3705nl 1RLZ24 91323 IRL3103L IRL2505 IRL2203N L-370
Text: HEXFE1 Power MOSFETs International IC2R Rectifier !d •d v {BR 0SS Continuous R0 Drain-to-Source *DS on) Continuous Drain Current On-State Drain Current Breakdown Max. Thermal Max. Power 100° Part Resistance Voltage Resistance Dissipation 25°C Number
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IRL3303L
IRL3103L
IRL2203N
RL3803L
1RLZ24NL
1RLZ34NL
IRL2505L
L3705N
1RLZ34N
l3705nl
1RLZ24
91323
IRL2505
L-370
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Untitled
Abstract: No abstract text available
Text: B 59 9-97 J232 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR AUDIO AMPLIFIER Absolute maximum ratings at TA= 25'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Process NJ16
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T0-226AA
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2n5020
Abstract: No abstract text available
Text: B 18 9 -9 7 2N5020, 2N5021 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maxim um ratings a t T * = 25°C • Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation
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2N5020,
2N5021
2N5Q20
2N5Q21
T0-18
SMP5020,
SMP5021
2n5020
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