IN50C
Abstract: QML-38534 IN50B Dosimeter radiation space MARKING CODE smd R05
Text: April 29, 2013 Radiation Performance Data Package RHD5900, RHD5901, RHD5902 Rev 2.0 DLA SMD Number: 5962-10241 Quad operational amplifiers Radiation Hardened by Design ELDRS: CMOS Immune Total dose: > 1 Mrad Si SEL Immune >100 MeV-cm /mg Neutron Displacement Damage
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Original
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RHD5900,
RHD5901,
RHD5902
-S-1083"
RHD5900:
inputD5902-901-1S
IN50C
QML-38534
IN50B
Dosimeter radiation space
MARKING CODE smd R05
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PDF
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HX84050
Abstract: No abstract text available
Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2
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Original
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HX84050
1x1014
1x109
1x1011
1x10-10
200-Lead
HX84050
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PDF
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . SMD POWER INDUCTOR IHLE-4040DC-5A Low-Profile, High-Current Inductor KEY BENEFITS • Integrated e-field shield eliminates the need for separate shielding • Up to 20 dB e-field reduction at 1 cm when the integrated shield is connected to ground
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Original
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IHLE-4040DC-5A
IHLE-4040DC-5A
17-Oct-14
VMN-PT0433-1502
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PDF
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Untitled
Abstract: No abstract text available
Text: OIXYS PRELIMINARY DATA SHEET IXGH28N30 IXGH28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C
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OCR Scan
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IXGH28N30
IXGH28N30S
TQ-247
28N30S)
O-247
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PDF
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ixys ml 075
Abstract: 20N30S
Text: □ IXYS PRELIMINARY DATA SHEET Symbol Test C onditions V CES Td = 25°C to 150°C V CGR « M aximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C 20 A ^CM Tc = 25°C, 1 ms
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OCR Scan
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IXGH20N30
IXGH20N30S
13/10Nm/lb
O-247
Conditio47
ixys ml 075
20N30S
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PDF
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AJW SMD
Abstract: SMD ajw
Text: □ IXYS PRELIM INA RY DATA SHEET IXGH28N30B IXGH28N30BS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C
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OCR Scan
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IXGH28N30B
IXGH28N30BS
13/10Nm/lb
O-247
AJW SMD
SMD ajw
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PDF
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SMD ajw
Abstract: ajw smd ajw 35
Text: □ IXYS PRELIM IN ARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C
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OCR Scan
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IXGH28N30A
IXGH28N30AS
13/10Nm/lb
O-247
SMD ajw
ajw smd
ajw 35
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PDF
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qe R 521 smd
Abstract: smd mk ixgh20n60b
Text: □ IXYS P re lim in a ry data HIPerFAST IGBT Symbol Test Conditions V v CGR T j = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 v v GEM Continuous Transient ^C25 ^C90 ' cm SSOA RBSOA Pc IXGH20N60B IXGH20N60BS « Maximum Ratings 600 600 V V ±20 ±30
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OCR Scan
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IXGH20N60B
IXGH20N60BS
O-247
qe R 521 smd
smd mk
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PDF
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KT 8030
Abstract: SMBJ15A SMBJ130A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ28A SMBJ8.0A SMBJ120A
Text: Data Sheet 5.0V to 170V SMD TRANSIENT VOLTAGE SUPPRESSORS Semiconductor 4E Mechanical Dimensions Description N 1^4.06/4.60^ Cathode _ • SMBJ5.0 Package “SMB 13.30/3.90 t*—mo /s/ sM .11/.30 1.65/2.191*-*1 1.91/2.41^ — ^ .O T /.20 1.90/2.15
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OCR Scan
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21X21X5
48X22X36cm
21X9X8
51X25X30cm
47X22X27cm
KT 8030
SMBJ15A
SMBJ130A
SMBJ17A
SMBJ58A
SMBJ100A
SMBJ64A
SMBJ28A
SMBJ8.0A
SMBJ120A
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PDF
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32N60BU1
Abstract: 32N60B
Text: □ IXYS HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES lC26 = 600 V = 76 A VCE sa„ = 1-7V t, = 200 ns P re lim in a ry d a ta Symbol TestConditions V CES Tj = 25°C to 150°C 600 V V CGR ^ 600 V V GES C ontinuous ±20 V V GEM Transient ±30 V Tc = 25°C
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OCR Scan
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IXGH39N60B
IXGH39N60BS
Cto150Â
O-247
32N60BU1
32N60B
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PDF
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smd diode 819
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C
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OCR Scan
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IXGH32N60AU1
IXGH32N60AU1S
O-247
32N60AU1S)
IXGH32N60AU1
IXQH32N60AU1S
XGH32N60AU1
smd diode 819
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PDF
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IXGH32N60AU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90
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OCR Scan
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32N60AU1
32N60AU1S
4b6b22b
IXGH32N60AU1
IXGH32N60AU1S
4bflb22b
0003bQb
IXGH32N60AU1
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PDF
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D041
Abstract: FBR6030 FBR6035 FBR6040 FBR6045 FBR6050 FBR6060
Text: 60 SCHOTTKY BARRIER RECTIFIERS Mechanical Dimensions Description .050 Typ Features • HIGH CURRENT CAPABILITY WITH LOW Vr ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS ■ MEETS UL SPECIFICATION 94V-0 E lectrical C haracteristics @ 25*C.
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OCR Scan
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X-200
FBR6030.
FBR6030
FBR6035
FBR6040
FBR6045
FBR6050
FBR6060
110ht
21X9X8
D041
FBR6045
FBR6060
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PDF
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931 diode smd
Abstract: g20n60
Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient
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OCR Scan
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1
IXGH24N60AU1S
4bflb22t.
931 diode smd
g20n60
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PDF
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746 KBU
Abstract: No abstract text available
Text: pci 3 0 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor Description Mechanical Dimensions « - .900 -►] T0-3P 4r ^200 f .050 Typ Features • HIGH CURREHT CAPABILITY WITH LOW VF ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS
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OCR Scan
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FBR3030.
FBR3030
FBR3035
FBR3040
FBR3045
FBR3050
FBR3060
21X21X5
48X22X36cm
746 KBU
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PDF
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D015
Abstract: D0201AD D041 FBR20100 FBR2090
Text: 20 Amp HV SCHOTTKY BARRIER RECTIFIERS Mechanical Dimensions Description JEDEC T0-22QAB i- > .10 T~ .1 4 0 x 'b .too, I -» t .39 .42 k. 4U- .225 Min .25 Features • HIGH CURRENT CAPABILITY WITH LOW V . ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION
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OCR Scan
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T0-22QAB
FBR2090
FBR2090
FBR20100
21X9X8
48X22X36cm
51X25X30cm
D015
D0201AD
D041
FBR20100
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet 16 Amp SCHOTTKY BARRIER RECTIFIERS emiconductor i § Mechanical Dimensions Description JEDEC T0-220AC .150 A-. I i .350 .240 i— H - .200 .390 {4—» .107 Features • HIGH CURRENT CAPABILITY WITH LOW V r ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION
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OCR Scan
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T0-220AC
FBR1650
FBR1650
FBR1660
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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PDF
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Untitled
Abstract: No abstract text available
Text: 10 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor M echanical Dimensions Description JEDEC T0-220A B *- ► 1 ' b ' k- .225 Min F e a tu r e s $ • HIGH CURREHT CAPABILITY WITH LOW V , ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS
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OCR Scan
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T0-220A
SR1030
SRI035
SR1040
SRI045
48X22X36cm
51X25X30cm
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PDF
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D041
Abstract: FBR3030 FBR3035 FBR3040 FBR3045 FBR3050 FBR3060 2w 3.0j KBU 3060
Text: 30 Amp SCHOTTKY BARRIER RECTIFIERS Mechanical Dimensions Description • .900 -►] t .670 .200 ' 2 pics.' 175 ' JEDEC 'l 1.200 T0-3P f .050 Typ Features ■ HIGH CURREH T CAPABILITY WITH LOW VF ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIEN CY w/LOW POWER LOSS
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OCR Scan
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FBR3030.
FBR3030
FBR3035
FBR3040
FBR3045
FBR3050
FBR3060
21X9X8
48X22X36cm
D041
FBR3045
FBR3060
2w 3.0j
KBU 3060
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET vCES IXGH20N30 IXGH20N30S HiPerFAST IGBT ^C25 VCE sat typ t < Symbol Test Conditions VCES ^ VCGR vGES VœM > Maximum Ratings = 25°C to 150°C 300 V Tj = 25°C to 150°C; RGE = 1 MO 300 V Continuous ±20 V Transient ±30 V Tc = 25° C
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OCR Scan
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IXGH20N30
IXGH20N30S
TQ-247
20N30S)
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: F l 7.5 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor Description Mechanical Dimensions m Features • HIGH CURREHT CAPABILITY WITH LOW V F ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ SUPERIOR M ETAL PROCESS ■ M EETS UL SPECIFICATION 94V-0
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OCR Scan
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FBR735
FBR740
FBR74S
21X21X5
48X22X36cm
21X9X8
51X25X30cm
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PDF
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Untitled
Abstract: No abstract text available
Text: 60 Amp High Voltage SCHOTTKY BARRIER RECTIFIERS D a ta Sheet emiconductor Mechanical Dimensions Description .050 Typ Features • HIGH CURRENT CAPABILITY WITH LOW Vr ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS ■ MEETS UL SPECIFICATION 94V-0
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OCR Scan
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FBR6030
FBR6035
FBR6040
FBR6045
FBRB050
FBR6060
51X25X30cm
21X21X5
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet 16 Amp SCHOTTKY BARRIER RECTIFIERS Semiconductor Description i 3 1 Mechanical Dimensions JEDEC T0-220AC <# .350 150 .240 .200 ~T~ .107 Features • HIGH CURRENT CAPABILITY WITH LOW VF ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS
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OCR Scan
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T0-220AC
FBR163S
FBR1G35
FBR1645
Sur000
51X25X30cm
21X21X5
47X22X27cm
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PDF
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D0201AD
Abstract: D015 D041 FBR30100 FBR3030 FBR3050 FBR3090 gross
Text: 30 Amp 90 & 100V SCHOTTKY BARRIER RECTIFIERS Mechanic»! Dimensions Description .900 ~*\ t .670 .200 2 pics, _ A _ .75 -> \ 17B I .175 JEDEC T0-3P T c ^ x .200 .050 Typ Features • HIGH CURRENT CAPABILITY WITH LOW V , ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION
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OCR Scan
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FBR3090
301OO
FBR30100
21X9X8
48X22X36cm
51X25X30cm
D0201AD
D015
D041
FBR30100
FBR3030
FBR3050
FBR3090
gross
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PDF
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