CM SMD TRANSIENT Search Results

IN50C

Abstract: QML-38534 IN50B Dosimeter radiation space MARKING CODE smd R05
Contextual Info: April 29, 2013 Radiation Performance Data Package RHD5900, RHD5901, RHD5902 Rev 2.0 DLA SMD Number: 5962-10241 Quad operational amplifiers Radiation Hardened by Design ELDRS: CMOS Immune Total dose: > 1 Mrad Si SEL Immune >100 MeV-cm /mg Neutron Displacement Damage

HX84050

Contextual Info: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . SMD POWER INDUCTOR IHLE-4040DC-5A Low-Profile, High-Current Inductor KEY BENEFITS • Integrated e-field shield eliminates the need for separate shielding • Up to 20 dB e-field reduction at 1 cm when the integrated shield is connected to ground

Contextual Info: OIXYS PRELIMINARY DATA SHEET IXGH28N30 IXGH28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C

ixys ml 075

Abstract: 20N30S
Contextual Info: □ IXYS PRELIMINARY DATA SHEET Symbol Test C onditions V CES Td = 25°C to 150°C V CGR « M aximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C 20 A ^CM Tc = 25°C, 1 ms

AJW SMD

Abstract: SMD ajw
Contextual Info: □ IXYS PRELIM INA RY DATA SHEET IXGH28N30B IXGH28N30BS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C

SMD ajw

Abstract: ajw smd ajw 35
Contextual Info: □ IXYS PRELIM IN ARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C

qe R 521 smd

Abstract: smd mk ixgh20n60b
Contextual Info: □ IXYS P re lim in a ry data HIPerFAST IGBT Symbol Test Conditions V v CGR T j = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 v v GEM Continuous Transient ^C25 ^C90 ' cm SSOA RBSOA Pc IXGH20N60B IXGH20N60BS « Maximum Ratings 600 600 V V ±20 ±30

KT 8030

Abstract: SMBJ15A SMBJ130A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ28A SMBJ8.0A SMBJ120A
Contextual Info: Data Sheet 5.0V to 170V SMD TRANSIENT VOLTAGE SUPPRESSORS Semiconductor 4E Mechanical Dimensions Description N 1^4.06/4.60^ Cathode _ • SMBJ5.0 Package “SMB 13.30/3.90 t*—mo /s/ sM .11/.30 1.65/2.191*-*1 1.91/2.41^ — ^ .O T /.20 1.90/2.15

32N60BU1

Abstract: 32N60B
Contextual Info: □ IXYS HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES lC26 = 600 V = 76 A VCE sa„ = 1-7V t, = 200 ns P re lim in a ry d a ta Symbol TestConditions V CES Tj = 25°C to 150°C 600 V V CGR ^ 600 V V GES C ontinuous ±20 V V GEM Transient ±30 V Tc = 25°C

smd diode 819

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

D041

Abstract: FBR6030 FBR6035 FBR6040 FBR6045 FBR6050 FBR6060
Contextual Info: 60 SCHOTTKY BARRIER RECTIFIERS Mechanical Dimensions Description .050 Typ Features • HIGH CURRENT CAPABILITY WITH LOW Vr ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS ■ MEETS UL SPECIFICATION 94V-0 E lectrical C haracteristics @ 25*C.

931 diode smd

Abstract: g20n60
Contextual Info: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient

746 KBU

Contextual Info: pci 3 0 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor Description Mechanical Dimensions « - .900 -►] T0-3P 4r ^200 f .050 Typ Features • HIGH CURREHT CAPABILITY WITH LOW VF ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS

D015

Abstract: D0201AD D041 FBR20100 FBR2090
Contextual Info: 20 Amp HV SCHOTTKY BARRIER RECTIFIERS Mechanical Dimensions Description JEDEC T0-22QAB i- > .10 T~ .1 4 0 x 'b .too, I -» t .39 .42 k. 4U- .225 Min .25 Features • HIGH CURRENT CAPABILITY WITH LOW V . ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION

Contextual Info: Data Sheet 16 Amp SCHOTTKY BARRIER RECTIFIERS emiconductor i § Mechanical Dimensions Description JEDEC T0-220AC .150 A-. I i .350 .240 i— H - .200 .390 {4—» .107 Features • HIGH CURRENT CAPABILITY WITH LOW V r ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION

Contextual Info: 10 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor M echanical Dimensions Description JEDEC T0-220A B *- ► 1 ' b ' k- .225 Min F e a tu r e s $ • HIGH CURREHT CAPABILITY WITH LOW V , ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS

D041

Abstract: FBR3030 FBR3035 FBR3040 FBR3045 FBR3050 FBR3060 2w 3.0j KBU 3060
Contextual Info: 30 Amp SCHOTTKY BARRIER RECTIFIERS Mechanical Dimensions Description • .900 -►] t .670 .200 ' 2 pics.' 175 ' JEDEC 'l 1.200 T0-3P f .050 Typ Features ■ HIGH CURREH T CAPABILITY WITH LOW VF ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIEN CY w/LOW POWER LOSS

Contextual Info: PRELIMINARY DATA SHEET vCES IXGH20N30 IXGH20N30S HiPerFAST IGBT ^C25 VCE sat typ t < Symbol Test Conditions VCES ^ VCGR vGES VœM > Maximum Ratings = 25°C to 150°C 300 V Tj = 25°C to 150°C; RGE = 1 MO 300 V Continuous ±20 V Transient ±30 V Tc = 25° C

Contextual Info: F l 7.5 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor Description Mechanical Dimensions m Features • HIGH CURREHT CAPABILITY WITH LOW V F ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ SUPERIOR M ETAL PROCESS ■ M EETS UL SPECIFICATION 94V-0

Contextual Info: 60 Amp High Voltage SCHOTTKY BARRIER RECTIFIERS D a ta Sheet emiconductor Mechanical Dimensions Description .050 Typ Features • HIGH CURRENT CAPABILITY WITH LOW Vr ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS ■ MEETS UL SPECIFICATION 94V-0

Contextual Info: Data Sheet 16 Amp SCHOTTKY BARRIER RECTIFIERS Semiconductor Description i 3 1 Mechanical Dimensions JEDEC T0-220AC <# .350 150 .240 .200 ~T~ .107 Features • HIGH CURRENT CAPABILITY WITH LOW VF ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS

D0201AD

Abstract: D015 D041 FBR30100 FBR3030 FBR3050 FBR3090 gross
Contextual Info: 30 Amp 90 & 100V SCHOTTKY BARRIER RECTIFIERS Mechanic»! Dimensions Description .900 ~*\ t .670 .200 2 pics, _ A _ .75 -> \ 17B I .175 JEDEC T0-3P T c ^ x .200 .050 Typ Features • HIGH CURRENT CAPABILITY WITH LOW V , ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION