Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX689B — IS S U E ! - M A Y 94_ • FEATURES * 20 Volt VCE0 * * Gain of 400 at lc=2 Amps Very low saturation voltage APPLICATIONS * * Darlington replacement
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ZTX689B
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSU E 1 - M AY 94 FEATURES * * 60 Volt V CE0 0.8 Am p continuous current * Gain of 10K at lc=0.5 Am p APPLICATIO N S * Lamp, solenoid and relay drivers E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS.
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001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2- NOVEMBER 94 ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L Collector-Emitter Voltage VALUE ^CES Continuous Drain Current Pulsed Drain Current UNIT 60 V 0.2 A ^DM 0.5 A Gate Source Vootage V qs ±40
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001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 100 V olt VDS * RDS on>= 1 -5 0 * Spice m odel available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT V VDS 100 Continuous Drain Current a tT amtj=25°C
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - APRIL 94 FXT790A _ [ — — — — — — — — FEATURES * * 40 Volt VCE0 Gain of 200 at lc=1 Amps A ffbJ iiff /I//// * Very low saturation voltage APPLICATIONS
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FXT790A
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IS S U E 2 - S E P T E M B E R 94 FEATURES * 240 Volt V DS * R DS on =9i2 * Low threshold A P P L IC A T IO N S * Electronic H ook Switch REFER TO ZVP4424A FO R G R A P H S ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L
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ZVP4424A
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT755 ISSUE 1 - FEB 94 FEATU RES * 150 V olt V CE0 * 1 A m p continuous current * Low saturation voltage * P,o,= 1 W a tt E E-Line T092 Compatible REFER TO ZTX755 FOR G R A P H S ABSOLUTE MAXIMUM RATINGS. PA R A M ET E R
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ZTX755
-100nA,
-10mA,
CICI7DS76
GG1D354
117DS7Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 20 0 V olt V DS * R DS on = 32i2 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Drain-Source Voltage V DS -200 V Continuous Drain Current at Tamb=25°C b -110
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 350 V olt VDS R DS on = 3 5 i i ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 350 V Continuous Drain Current at Tamb=25°C •d 90 mA Pulsed Drain Current
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cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - SEPT 93 FEATURES * 200 Volt VDS * R DS on =23£i REFER TO BS107PT FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tarnij=25°C
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BS107PT
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX750 ZTX751 I S S U E 2 - J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 A m p c o n tin u o u s current * L o w saturation voltage * P ,o f1 W a tt E-Line T 0 9 2 Compatible ABSOLUTE M A XIM U M RATINGS.
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ZTX750
ZTX751
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 PROVISIONAL DATASHEET ISSUE A - MARCH 94 FEATU RES * * * Fast switching Guaranteed hFE specified up to 20 Am ps Low collector-emmiter saturation voltage T0126 ABSOLUTE M A XIM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage
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ZBD849
T0126
I7DS76
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX694B IS S U E 1 - A P R » 9 4 FEATURES * 120 Volt VCE0 * * Gain of 400 at lc=200mA Very low saturation voltage APPLICATIONS * * Darlington replacement
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ZTX694B
200mA
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Untitled
Abstract: No abstract text available
Text: • ^70570 OOOTìbl 721 ■ NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - MARCH 94_ FEATURES * 100 Volt VCE0 * 2 Am ps continuous current * Low saturation voltage * Ptot= 1 Watt REFER TO ZTX653 FOR GRAPHS ABSOLUTE M A X IM U M RATINGS.
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ZTX653
001G35S
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ztx653
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 - JULY 94_ FEATURES 100 Volt vCE0 * * * 2 Amp continuous current Low saturation voltage * P,ot=1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage ZTX653 UNIT
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ZTX652
ZTX653
001G35S
ztx653
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt V,DS R DS on -8£2 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage Continuous Drain Current at Tamly=250C Pulsed Drain Current Gate Source Voltage VALUE UNIT < o tn PARAMETER
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ZRA125 ISSUE 2 -JU LY 94 FEATURES * No stabilising capacitor required * Typical Tc 30ppm/°C * Typical slope resistance 0.65Q * ±3% or ±2% tolerance * Industrial temperature range * Operating current 50nA to 5mA
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ZRA125
30ppm/Â
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 200 Volt V DS * fW r io n * Low threshold APPLICATIONS * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamtp25°C
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Tamtp25Â
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX510 ISSUE 2 - MARCH 94 FEATURES * 12 Volt V CE0 * P fT=400M H z s f E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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ZTX510
amtp25Â
-10nA
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PRECISION 1.24 VOLT MICROPOWER VOLTAGE REFERENCE ISSUE 2 -JU N E 94 FEATURES * N o s ta b ilis in g ca p a c ito r req u ire d * T y p ic a l T c 3 0 p p m f C * T yp ica l slo p e resistance 0.6511 * ±1% to le ra n ce * In d u s tria l te m p e ra tu re range
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cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ZTX614 ISSUE 1 - APRIL 94_ I FEATURES * 100 Volt V CE0 * * 800 m A continuous current Gain of 10K at lc=500mA * Ptot=1 Watt REFER TO BCX38 FOR G RA PH S ABSOLUTE M A X IM U M RATINGS.
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ZTX614
500mA
BCX38
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 -A P R IL 94_ FEATURES * * 25 Volt VCE0 2 Amp continuous current * Low saturation voltage * Ptot=1 W att APPLICATIONS * Motor driver * DC-DC converters E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS.
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE2 -MARCH 94 FEATURES * 60 Volt V,DS R DS on =5£2 ABSOLUTE M AXIM UM RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Drain Current at Tam[j=250C VALUE UNIT VDS -60 V ta -280 mA Pulsed Drain Current
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cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: ZTX754 ZTX755 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS - - - ISSUE 2 - JULY 94 FEATURES * 150 V olt VCE0 * 1 A m p continuous current * Low saturation voltage * Ptot= 1 W att / E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZTX754
ZTX755
2TX754
0Q1Q354
001G35S
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