Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET BS107P ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS on =23Ω D G REFER TO BS107PT FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE UNIT Drain-Source Voltage VDS 200
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BS107P
BS107PT
100mA*
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BS107PT
Abstract: DSA0037518
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS107PT TYPICAL CHARACTERISTICS ID On -On-State Drain Current (Amps) ID(On) - On-State Drain Current (Amps) 1.2 VGS= 10V 6V 1.0 0.8 0.6 4V 0.4 0.2 3V 20 40 60 80 100 0.4 ABSOLUTE MAXIMUM RATINGS. VDS-Drain Source Voltage (Volts)
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BS107PT
100mA
500mA
BS107PT
DSA0037518
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Untitled
Abstract: No abstract text available
Text: BS107PT Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)
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BS107PT
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BS107P
Abstract: fet to92 BS107PT DSA0037516
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS107P ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS on =23Ω D G REFER TO BS107PT FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C
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BS107P
BS107PT
100mA*
BS107P
fet to92
DSA0037516
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - SEPT 93 FEATURES * 200 Volt VDS * R DS on =23£i REFER TO BS107PT FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tarnij=25°C
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BS107PT
001G35S
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DEVICE MARKING ZVN
Abstract: BSS138S 2N7001
Text: ZETEX SEM ICO NDUCTORS IbE D • ^70576 0Q0bflS4 3 ■ ZETB MOSFETS SPECÌFiCATÌONS — —P N-CHANIMEL SM ALL SIGNAL M OSFETS Part number ZVN0545A* ZVN0545B ZVN0540A* ZVN0540B ZVN2535A ZVN2535B ZVN0535A* ZVN 0124A ZVN0124B ZVN 2120A ZVN2120B BS107P BS107PT
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ZVN0545A*
ZVN0545B
ZVN0540A*
ZVN0540B
ZVN2535A
ZVN2535B
ZVN0535A*
ZVN0124B
ZVN2120B
BS107P
DEVICE MARKING ZVN
BSS138S
2N7001
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75E0533
Abstract: No abstract text available
Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/ D IS C R E T E N-channel enhancement mode vertical DMOS FET DE 1 7 S 2 D S B 3 GOOSSaT S f 95D T 05509 D -3S-2S BS107PT FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown
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BS107PT
DDDSS1495D
75E0533
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 2 - SEPT 93 FEATURES * 200 Volt VDS * R o S o n r2 3 ß REFER TO BS107PT FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Drain-Source Voltage V A LU E U N IT V DS 200 V Continuous Drain Current at Tam|j=25°C
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BS107PT
300ns.
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ZVN0545G
Abstract: ZVN3320A ZVN3320F ZVN0120A ZVN0545A ZVN253 bs107p ZVN0545 ZVN2535A e-line
Text: Section 3: MOSFETs N-Channel Devices BVdss from 3 00 V to 450V Typical application areas for this range of devices include Power Supplies, Converters, Telecom Switches, M otor Control and High Voltage Driver circuits Part No. •d B V D SS V GS th •d m
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ZVN0545G
ZVN0545A
ZVN0540A
ZVNL535A
ZVN2535A
OT223
functionsN2120G
ZVN2120A
ZVN0120A
BS107P
ZVN3320A
ZVN3320F
ZVN253
ZVN0545
ZVN2535A
e-line
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zvn2110b
Abstract: ZVN3306B
Text: SELECTION TABLES TABLE 1: N-CHANNEL SM ALL SIGNAL M OSFETS Part number B V 0ss 'dm V G S th| V V mA A Min. Pd ^ D S Io n l at In Max. mA S2 at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10
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ZVN0545A*
ZVN0545B
ZVN0540A*
ZVN0540B
ZVN2535A
ZVN2535B
ZVN0535A*
ZVN0124A
ZVN0124B
ZVN2120A
zvn2110b
ZVN3306B
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ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
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ZVP2106C
ZVP2110A
ZVP2110C
ZVP2120A
ZTX788B
ZVP2120C
ZVP3306A
ZVP3310A
ZVP4105A
2110C
ZTX752 equivalent
transistor 42-10a data
BC369
FXTA92
BSS98
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mosfet 42-10a
Abstract: ZVN P-channel
Text: E-LINE MOSFETS TABLE 18 : SMALL SIGNAL MOSFETS This comprehensive range of MOSFET's is optim ised fo r low on-resistance w hilst m aintaining a fast switching performance. Application areas vary from dialler circuits in electronic telephones, autom otive solenoid drivers, DC-DC converters to general switching circuits.
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ZCP0545A
mosfet 42-10a
ZVN P-channel
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ZVN4306A
Abstract: ZVP4424
Text: E-LINE MOSFETS TABLE 18 : SMALL SIGNAL MOSFETS This com prehensive range of M OSFET's is optim ised for low on-resistance w hilst m aintaining a fast switching perform ance. Application areas vary from dialler circuits in electronic telephones, autom otive
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ZCN0545A
ZCP0545A
ZVN4306A
ZVP4424
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VN10LP
Abstract: ZVN4206A ZVN0545A ZVN2106A ZVNL110A ZVN0124A ZVN0124B ZVN0535A ZVN0540A ZVN0540B
Text: SELECTION TABLES TABLE 1: N-CHANNEL SMALL SIGNAL MOSFETS Part number B V DSS 'd *DM V GS th J V mA A Min. at Max. Pd R DS(on> 'd mA fi at lD mA Max. Package V GS V w ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50 100 10 5 TO-39
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ZVN0545A*
ZVN0545B
ZVN0540A*
ZVN0540B
ZVN2535A
ZVN2535B
ZVN0535A*
ZVN0124A
ZVN0124B
ZVN2120A
VN10LP
ZVN4206A
ZVN0545A
ZVN2106A
ZVNL110A
ZVN0535A
ZVN0540A
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VN10LP
Abstract: ZVN3306 ZVN3306A ZVN3320A ZVN0545A ZVN3306B ZVN3310 ZVN4206A ZVN0124A ZVN0124B
Text: SELECTION TABLES T A B LE 1: N-CHAN N EL S M A L L SIG NAL M O SFETS Part number B V DSS 'd *DM V GS th J V mA A Min. Pd R DS(on> at ' d mA Max. fi at lD mA Max. V GS V w Package ZVN0545A* 450 90 0.6 1 3 1 50 100 10 0.7 E-line ZVN0545B 450 150 0.6 1 3 1 50
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ZVN0545A*
ZVN0545B
ZVN0540A*
ZVN0540B
ZVN2535A
ZVN2535B
ZVN0535A*
ZVN0124A
ZVN0124B
ZVN2120A
VN10LP
ZVN3306
ZVN3306A
ZVN3320A
ZVN0545A
ZVN3306B
ZVN3310
ZVN4206A
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BS107PT
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - SEPT 93 FEATURES * 200 V olt VDS * R DS on = 2 8 £ i ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT VDS 200 V Continuous Drain Current at Tamij=25°C 'd 0.12 A Pulsed Drain Current
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100mA*
300ns.
BS107PT
BS107PT
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E-Line Package Dimensions
Abstract: BS107PT
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -S E P T 93 FEATURES * 200 Volt VDS * R DS on = 2 8 i i ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current at Tamjp25°C Pulsed Drain Current VALUE UNIT V DS 200 V •d
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onr28ii
100nA
CICI7DS76
GG1D354
117DS7Ã
001G35S
E-Line Package Dimensions
BS107PT
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