Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CGH25120F Search Results

    SF Impression Pixel

    CGH25120F Price and Stock

    MACOM CGH25120F

    RF MOSFET HEMT 28V 440162
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH25120F Tray 25 1
    • 1 $762.15
    • 10 $647.384
    • 100 $647.384
    • 1000 $647.384
    • 10000 $647.384
    		Buy Now
    Mouser Electronics CGH25120F
    • 1 -
    • 10 $639.38
    • 100 $639.38
    • 1000 $639.38
    • 10000 $639.38
    		Get Quote
    Richardson RFPD CGH25120F 1
    • 1 $821.32
    • 10 $821.32
    • 100 $821.32
    • 1000 $821.32
    • 10000 $821.32
    		Buy Now

    MACOM CGH25120F-AMP

    AMPLIFIER, 2.3-2.7GHZ, CGH25120F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH25120F-AMP Bulk 1
    • 1 $964.71
    • 10 $964.71
    • 100 $964.71
    • 1000 $964.71
    • 10000 $964.71
    		Buy Now

    CGH25120F Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH25120F Wolfspeed 120W GAN HEMT 28V 2.5-2.7GHZ FET Original PDF
    CGH25120F Wolfspeed 120W GAN HEMT 28V 2.5-2.7GHZ FET Original PDF

    CGH25120F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGH25120F

    Abstract: J137 ATC600S Model CGH25120F ATC600F CGH2512 CGH25120 CGH25120FCGH25120F CGH25120F-TB JESD22
    Text: PRELIMINARY CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz


    Original     		PDF CGH25120F CGH25120F CGH2512 J137 ATC600S Model CGH25120F ATC600F CGH2512 CGH25120 CGH25120FCGH25120F CGH25120F-TB JESD22

    Untitled

    Abstract: No abstract text available
    Text: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz


    Original     		PDF CGH25120F CGH25120F CGH2512 CGH25120F-Tpplications

    Untitled

    Abstract: No abstract text available
    Text: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz


    Original     		PDF CGH25120F CGH25120F CGH2512

    RF Transistor s-parameter

    Abstract: j1108 CGH25120 CGH25120F-TB 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
    Text: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz


    Original     		PDF CGH25120F CGH25120F CGH2512 CGH25120F-Tfor RF Transistor s-parameter j1108 CGH25120 CGH25120F-TB 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    ofdm predistortion

    Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
    Text: May 2009 Short range wireless UWB GPS and satellite  GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based


    Original     		PDF

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F