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    CEP603 Search Results

    CEP603 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEP6030AL Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP6030L Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    CEP6030L Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP6030LS2 Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP6031L Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP6031LS2 Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP603AL Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP603ALS2 Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

    CEP603 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEB6030L

    Abstract: CEP6030L "Field Effect Transistor" cep6030
    Text: CEP6030L/CEB6030L March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 52A , RDS ON =13.5m Ω D @VGS=10V. RDS(ON)=20m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		CEP6030L/CEB6030L CEB6030L CEP6030L "Field Effect Transistor" cep6030 PDF

    CEP6030L

    Abstract: CEB6030L CEB6030
    Text: CEP6030L/CEB6030L March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 52A , RDS ON =13.5mΩ @VGS=10V. RDS(ON)=20m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		CEP6030L/CEB6030L O-220 O-263 CEP6030L CEB6030L CEB6030 PDF

    cep603al

    Abstract: CEB603AL CEP603A Cep603al Transistor ceb603
    Text: CEP603AL/CEB603AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 25A , RDS ON =22m Ω @VGS=10V. RDS(ON)=40m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		CEP603AL/CEB603AL O-220 O-263 cep603al CEB603AL CEP603A Cep603al Transistor ceb603 PDF

    CEP6030AL

    Abstract: CEB6030AL 24h6
    Text: mu I H :" ! " CEP6030AL/C EB 6030AL PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D • 3 0 V , 5 2 A , R d s o n =1 1 m Q (typ) @Vgs=10V. RDS(ON)=16m Q (typ) @ V gs =5V. • Extra low gate charge. • Super high dense cell design for extremely low R d s (o n ).


    OCR Scan     		CEP6030AL/CEB6030AL O-220 O-263 to-263 to-220 CEP6030AL CEB6030AL 24h6 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEP6031LS2/CEB6031LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voltage Drain Current Idss V ds =24V, V gs =0V 10 pA Gate-Body Leakage


    OCR Scan     		CEP6031LS2/CEB6031LS2 250hA PDF

    cep603al

    Abstract: CEB603AL Cep603al Transistor CEP603A
    Text: CEP603AL/CEB603AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 2 5 A , R ds on =22 iti Q @ Vgs= 1 0V. @ Vgs=4.5V. R ds (ON)=40itiQ • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.


    OCR Scan     		CEP603AL/CEB603AL 22itiQ 40itiQ O-220 O-263 to-263 to-220 cep603al CEB603AL Cep603al Transistor CEP603A PDF

    P603

    Abstract: B6030L CEP6030LS2 CEB6030LS2
    Text: CEP6030LS2/CEB6030LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVdss VgSz OV, ID=250|oA 30 Zero Gate Voltage Drain Current Idss Vds=24V, Vgs =0V Gate-Body Leakage Igss Vgs=±16V,Vds=0V


    OCR Scan     		CEP6030LS2/CE B6030LS2 250hA P603 B6030L CEP6030LS2 CEB6030LS2 PDF

    CEB6031L

    Abstract: No abstract text available
    Text: CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 30V, 60A, R d s o n =1 O m Q @ Vgs=1 0V. R d s (on )=1 5m Q @ Vgs=4.5V. • Super high dense cell design for extremely low R • High power and current handling capability.


    OCR Scan     		10iti 15itiQ O-220 O-263 to-263 to-220 CEP6031L/CEB6031L CEB6031L PDF

    CEB6031L

    Abstract: CEP6031l
    Text: CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS ON =10m Ω @VGS=10V. D RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		CEP6031L/CEB6031L O-220 O-263 CEB6031L CEP6031l PDF

    cep6030

    Abstract: CEB6030 CEP603 16NS120 CEB6030L ceb603 CEP6030L
    Text: CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS ON = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		CEP6030L/CEB6030L O-220 O-263 cep6030 CEB6030 CEP603 16NS120 CEB6030L ceb603 CEP6030L PDF

    CEB6031L

    Abstract: No abstract text available
    Text: CEP6031L/CEB6031L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 60A,RDS ON = 10mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP6031L/CEB6031L O-220 O-263 CEB6031L PDF

    CEP603AL

    Abstract: CEB603ALS2 CEP603A
    Text: CEP603ALS2/CEB603ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voilage Drain Current Idss V ds=24V, V gs =0V 10 [iA Gate-Body Leakage


    OCR Scan     		CEP603ALS2/CEB603ALS2 250hA CEP603AL CEB603ALS2 CEP603A PDF

    CEP6030L

    Abstract: CEB6030L CEB6030
    Text: CEP6030L/CEB6030L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 30V , 52A , R d s on =1 3.5mQ R d s (on)=20 iti Q @V g s =1 0V. @Vgs=4.5V. • Super high dense cell design for extremely low R ds(on). • High power and current handling capability.


    OCR Scan     		CEP6030L/CEB6030L 20itiQ O-22Q O-263 to-263 to-220 250//A CEP6030L CEB6030L CEB6030 PDF

    12V ENERGY LIGHT CIRCUIT DIAGRAM

    Abstract: 1N5820-1 mother board power soft start reset circuit 10KF Datasheet AIC1570 AN010 surge SPS PCB layout CEP6030L
    Text: AN010 Cost-Effective Power Management Design for Advanced PC Motherboards Introduction: Basic Characteristics of AIC1570: In such a rapidly changing information industry, it is essential to speed up the clock speed of CPU. Without increasing power dissipation, the required


    Original     		AN010 AIC1570: 12V ENERGY LIGHT CIRCUIT DIAGRAM 1N5820-1 mother board power soft start reset circuit 10KF Datasheet AIC1570 AN010 surge SPS PCB layout CEP6030L PDF

    mother board power soft start reset circuit

    Abstract: 5820 diode equivalent mother board intel block diagram PC mother board power PC soft start circuit 10KF Datasheet capacitor huang AIC1570 270MF cep6030 CEP603
    Text: AN00-003 Cost-Effective Power Management Design for Advanced PC Motherboards Michael Huang Introduction: Basic Characteristics of AIC1570: In such a rapidly changing information industry, it is essential to speed up the clock speed of CPU. Without increasing power dissipation, the required


    Original     		AN00-003 AIC1570: Inte05 mother board power soft start reset circuit 5820 diode equivalent mother board intel block diagram PC mother board power PC soft start circuit 10KF Datasheet capacitor huang AIC1570 270MF cep6030 CEP603 PDF