CEB6030L
Abstract: CEP6030L "Field Effect Transistor" cep6030
Text: CEP6030L/CEB6030L March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 52A , RDS ON =13.5m Ω D @VGS=10V. RDS(ON)=20m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.
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CEP6030L/CEB6030L
CEB6030L
CEP6030L
"Field Effect Transistor"
cep6030
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CEP6030L
Abstract: CEB6030L CEB6030
Text: CEP6030L/CEB6030L March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 52A , RDS ON =13.5mΩ @VGS=10V. RDS(ON)=20m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.
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CEP6030L/CEB6030L
O-220
O-263
CEP6030L
CEB6030L
CEB6030
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cep603al
Abstract: CEB603AL CEP603A Cep603al Transistor ceb603
Text: CEP603AL/CEB603AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 25A , RDS ON =22m Ω @VGS=10V. RDS(ON)=40m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.
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CEP603AL/CEB603AL
O-220
O-263
cep603al
CEB603AL
CEP603A
Cep603al Transistor
ceb603
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CEB6031L
Abstract: CEP6031l
Text: CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS ON =10m Ω @VGS=10V. D RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.
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CEP6031L/CEB6031L
O-220
O-263
CEB6031L
CEP6031l
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cep6030
Abstract: CEB6030 CEP603 16NS120 CEB6030L ceb603 CEP6030L
Text: CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS ON = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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CEP6030L/CEB6030L
O-220
O-263
cep6030
CEB6030
CEP603
16NS120
CEB6030L
ceb603
CEP6030L
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CEB6031L
Abstract: No abstract text available
Text: CEP6031L/CEB6031L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 60A,RDS ON = 10mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.
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CEP6031L/CEB6031L
O-220
O-263
CEB6031L
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Untitled
Abstract: No abstract text available
Text: AIC1579/L Step-Down DC/DC Controller n n FEATURES DESCRIPTION l Operation Voltage up to 15V. The AIC1579 is a high-power, high-efficiency l Simple Voltage-Mode PWM Control. voltage-mode DC/DC controller for motherboard l Fast Transient Response. VI/O power supply applications. Designed to
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AIC1579/L
AIC1579
200KHz
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20n03hl
Abstract: No abstract text available
Text: AIC1571 5-bit DAC, Synchronous PWM Power Regulator with Dual Linear Controllers FEATURES DESCRIPTION Provides 3 Regulated Voltages for Microprocessor Core, Clock and GTL Power. Simple Voltage-Mode PWM Control. Dual N-Channel MOSFET Synchronous Driver. Operates from +3.3V, +5V and +12V Inputs.
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AIC1571
AIC1571
20n03hl
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Untitled
Abstract: No abstract text available
Text: AIC1570 5-bit DAC, Synchronous PWM Power Regulator with LDO and Linear Controller FEATURES DESCRIPTION Compatible with HIP6018. Provides 3 Regulated Voltages for Micro-processor Core, Clock and GTL Power. The AIC1570 combines a synchronous voltage mode controller with a low dropout linear regulator
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AIC1570
HIP6018.
AIC1570
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Untitled
Abstract: No abstract text available
Text: SS6580/L Step-Down DC/DC Controller with Shutdown n l l l l l l l l l n FEATURES Operating Voltage up to 15V. Simple Voltage-Mode PWM Control. Fast Transient Response. 2V and 1.3V ± 2% Feedback Voltage Reference Options. Adjustable Current Limit without External Sense
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SS6580/L
SS6580
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free circuit diagram of motherboard
Abstract: CEB6030L AIC1580 AIC1580L SB1020 POWER MOSFET N-Channel 230V
Text: AIC1580/L Step-Down DC/DC Controller with Shutdown FEATURES DESCRIPTION Operation Voltage up to 15V. Simple Voltage-Mode PWM Control. Fast Transient Response. The AIC1580 is a high-power, high-efficiency voltage-mode switching regulator controller for 2V and 1.3V ± 2% Feedback Voltage Reference
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AIC1580/L
AIC1580
200KHz
free circuit diagram of motherboard
CEB6030L
AIC1580L
SB1020
POWER MOSFET N-Channel 230V
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2N2222
Abstract: Q1 2N2222 Pin layout for a 2N2222 transistor CEB6030 pin configuration transistor 2N2222 D45H2A AN022 equivalent of 2n2222 equivalent transistor 2N2222 equivalent component of transistor 2N2222
Text: AN022 High Side Driver for Buck Converter with an LDO Introduction And it works well at low input voltages. For example, a 2.5V input, which comes from the output of AIC1630A, Most boost converters have been applied to step-up can be converted into an output of 1.8V. Due to the
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AN022
AIC1630A,
AIC1630A
2N2222
Q1 2N2222
Pin layout for a 2N2222 transistor
CEB6030
pin configuration transistor 2N2222
D45H2A
AN022
equivalent of 2n2222
equivalent transistor 2N2222
equivalent component of transistor 2N2222
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Untitled
Abstract: No abstract text available
Text: AIC1570 5-bit DAC, Synchronous PWM Power Regulator with LDO and Linear Controller n n FEATURES l Compatible with HIP6018. l Provides 3 Regulated Voltages for Micro-processor Core, Clock and GTL Power. DESCRIPTION The AIC1570 combines a synchronous voltage
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AIC1570
HIP6018.
AIC1570
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Untitled
Abstract: No abstract text available
Text: AIC1570 5-bit DAC, Synchronous PWM Power Regulator with LDO and Linear Controller FEATURES DESCRIPTION Compatible with HIP6018. Provides 3 Regulated Voltages for Micro-processor Core, Clock and GTL Power. The AIC1570 combines a synchronous voltage mode controller with a low dropout linear regulator
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AIC1570
HIP6018.
AIC1570
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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50 AMP MOSEFET
Abstract: series connection of linear mosfet 945 MOTHERBOARD CIRCUIT diagram 8 pin 4v power supply converter P channel MOSFET 10A schematic AIC1570 AIC1570CS CEB6030L HIP6018 SO24
Text: AIC1570 5-bit DAC, Synchronous PWM Power Regulator with LDO and Linear Controller FEATURES DESCRIPTION Compatible with HIP6018. Provides 3 Regulated Voltages for Micro- processor Core, Clock and GTL Power. The AIC1570 combines a synchronous voltage mode controller with a low dropout linear regulator
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AIC1570
HIP6018.
AIC1570
D5820
270uF
50 AMP MOSEFET
series connection of linear mosfet
945 MOTHERBOARD CIRCUIT diagram
8 pin 4v power supply converter
P channel MOSFET 10A schematic
AIC1570CS
CEB6030L
HIP6018
SO24
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Untitled
Abstract: No abstract text available
Text: AIC1580/L Step-Down DC/DC Controller with Shutdown FEATURES DESCRIPTION Operation Voltage up to 15V. Simple Voltage-Mode PWM Control. Fast Transient Response. The AIC1580 is a high-power, high-efficiency voltage-mode switching regulator controller for 2V and 1.3V ± 2% Feedback Voltage Reference
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AIC1580/L
AIC1580
200KHz
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Untitled
Abstract: No abstract text available
Text: CEP6031LS2/CEB6031LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voltage Drain Current Idss V ds =24V, V gs =0V 10 pA Gate-Body Leakage
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CEP6031LS2/CEB6031LS2
250hA
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cep603al
Abstract: CEB603AL Cep603al Transistor CEP603A
Text: CEP603AL/CEB603AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 2 5 A , R ds on =22 iti Q @ Vgs= 1 0V. @ Vgs=4.5V. R ds (ON)=40itiQ • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.
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CEP603AL/CEB603AL
22itiQ
40itiQ
O-220
O-263
to-263
to-220
cep603al
CEB603AL
Cep603al Transistor
CEP603A
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P603
Abstract: B6030L CEP6030LS2 CEB6030LS2
Text: CEP6030LS2/CEB6030LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVdss VgSz OV, ID=250|oA 30 Zero Gate Voltage Drain Current Idss Vds=24V, Vgs =0V Gate-Body Leakage Igss Vgs=±16V,Vds=0V
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CEP6030LS2/CE
B6030LS2
250hA
P603
B6030L
CEP6030LS2
CEB6030LS2
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CEB6031L
Abstract: No abstract text available
Text: CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 30V, 60A, R d s o n =1 O m Q @ Vgs=1 0V. R d s (on )=1 5m Q @ Vgs=4.5V. • Super high dense cell design for extremely low R • High power and current handling capability.
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10iti
15itiQ
O-220
O-263
to-263
to-220
CEP6031L/CEB6031L
CEB6031L
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CEP603AL
Abstract: CEB603ALS2 CEP603A
Text: CEP603ALS2/CEB603ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voilage Drain Current Idss V ds=24V, V gs =0V 10 [iA Gate-Body Leakage
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CEP603ALS2/CEB603ALS2
250hA
CEP603AL
CEB603ALS2
CEP603A
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CEP6030L
Abstract: CEB6030L CEB6030
Text: CEP6030L/CEB6030L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 30V , 52A , R d s on =1 3.5mQ R d s (on)=20 iti Q @V g s =1 0V. @Vgs=4.5V. • Super high dense cell design for extremely low R ds(on). • High power and current handling capability.
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CEP6030L/CEB6030L
20itiQ
O-22Q
O-263
to-263
to-220
250//A
CEP6030L
CEB6030L
CEB6030
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CEP6030AL
Abstract: CEB6030AL 24h6
Text: mu I H :" ! " CEP6030AL/C EB 6030AL PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D • 3 0 V , 5 2 A , R d s o n =1 1 m Q (typ) @Vgs=10V. RDS(ON)=16m Q (typ) @ V gs =5V. • Extra low gate charge. • Super high dense cell design for extremely low R d s (o n ).
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CEP6030AL/CEB6030AL
O-220
O-263
to-263
to-220
CEP6030AL
CEB6030AL
24h6
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