CD 551 MOSFET Search Results

Contextual Info: APT10086SVR A dvanced po w er Te c h n o l o g y 1000V 13A 0.860Í2 POWER MOS V‘ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

13n10

Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS

Contextual Info: □ IXYS HIPerFET vv DSS Power MOSFETs N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 10 A 1.20 Q 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Sym bol T est Conditions

AS1210

Contextual Info: • K A dvanced W7Æ P o w er Tec h n o lo g y APT8065SVR soov i3a o.65oq POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

IXYS DS 145

Abstract: 13N100
Contextual Info: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS

cd 551 mosfet

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1AS-18A HIGH-SPEED SWITCHING USE FS1AS-18A ¿ • Vdss . 9 0 0 V • rDS ON (MAX) • f e . 1 5 . 0 Í 2

26N500

Abstract: DIXYS
Contextual Info: n ï Y V Q wnm 1 A . X u Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q DS on Q C la ss = 500 V = 26 A = 0.20 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQg, High dv/dt Symbol TestConditions Maximum Ratings

Contextual Info: A P T 1001R S V R A dvanced W 7Æ P o w e r Te c h n o lo g y 1000v 11 a i.oooq POWER MOS V Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

vm200

Contextual Info: IRF654A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss a 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 iM M ax. @ VDS = 250V

cd 551 mosfet

Contextual Info: MITSUBISHI Nch POWER MOSFET ] FS10KMJ-2 ! ! | HIGH-SPEED SWITCHING USE FS10KMJ-2 OUTLINE DRAWING D im e n s io n s in m m • 4V DRIVE • VDSS .100V .0.19Q

13n50

Abstract: IXYS DS 145 MAX1352
Contextual Info: gixYS HiPerFET Power MOSFETs IXFJ 13N50 VDSS = 500 V iD cont = 13 A \ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Test Conditions VDSS Tj =25°Cto150°C 500 V VDGR T j = 25° C to 150° C; RQS= 1 M£2 500 V Vos v GSM Continuous ±20

IXYS DS 145 12A

Abstract: IXYS DS 145 LTS 543
Contextual Info: nixYs HiPerFET Power MOSFETs Q Class IXFH 12N100Q IX F T 12N100Q DSS D25 P DS on = 1000 V 12 A = 1.05 Q trr < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings

Contextual Info: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings

Contextual Info: International iMiRectifier P D - 9 .1 3 3 9 IRF520N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 1 0 0 V ^ D S o n = Id =

KM10T

Contextual Info: HiPerFAST IGBT Lightspeed™ Series V CES IXGH 32N60C IXGT 32N60C ^C25 V CE sat typ ^ fity p 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings T j = 25°C to 150°C 600 V Tj = 25° C to 150° C; RQE = 1 MQ 600 V Continuous

TO-264 Jedec package outline

Contextual Info: nixYS ADVANCEDTECHNICAL INFORMATION High Speed IGBT with Diode IXSH30N60BD1 IXSK30N60BD1 IXST30N60BD1 V CES 600 V 55 A ^C25 V CE sat tfi Short Circuit SOA Capability 2.0 V 140 ns TO-247AD (IXSH) Symbol Test Conditions vCES T j =25°C to150°C VcOR T j = 25° C to 150° C; RGE=

3000w power amplifier circuit diagram

Abstract: power amplifier 3000w diagram power amplifier 3000w circuit diagram 3000w power amplifier Circuit 3000w power amp 3000w amplifier SA03 3000w mosfet circuit
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 FEATURES • WIDE SUPPLY RANGE—16-100V • 30A CONTINUOUS TO 60°C case • 3 PROTECTION CIRCUITS • ANALOG OR DIGITAL INPUTS

5304 pwm

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 FEATURE • HIGH FREQUENCY SWITCHING — 200 kHz • WIDE SUPPLY RANGE—16-200V • 15A CONTINUOUS TO 65°C case • 3 PROTECTION CIRCUITS

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 FEATURE • HIGH FREQUENCY SWITCHING — 200 kHz • WIDE SUPPLY RANGE—16-200V • 15A CONTINUOUS TO 65°C case • 3 PROTECTION CIRCUITS

c 4977 transistor

Abstract: transistor on 4977 mosfet 452 JSs 97 diode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N-Channel Enhancement-Mode Silicon Gate The D^PAK package has the capability of housing the largest chip

Alc201A

Abstract: HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN
Contextual Info: Intel 852GME Interactive Client Reference Design User’s Guide October 2003 Order Number: 274000-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN

TDA7260

Abstract: capacitor 470nf25v TDA7232 18 zr TDA 2011 TDA7268 100KA SGSP321 TDA7268 S
Contextual Info: rZ 7 A 7# S G S -T H O M S O N g HIGH EFFICIENCY AUDIO PWM DRIVER • ■ ■ . ■ ■ HIGH EFFICIENCY P0 = 30 W W ITH POWER MOS BRIDGE LOW DISTORTION SINGLE SUPPLY OPERATION MUTING FACILITY TH ERM AL AND SHO RT-CIRCUIT PROTEC­ TION ■ DUMP PROTECTION D E S C R IP T IO N

4424 ym

Abstract: MIC4423AJBQ MIC4424CN
Contextual Info: IEH e L MIC4423/4424/4425 Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 family of

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s