igbt to247
Abstract: s9011 IXGH24N60AU1S ixgh24N60
Text: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25
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IXGH24N60AU1
IXGH24N60AU1S
T0-247
24N60AU1S)
O-247
24N60AU1
B2-41
1XGH24N68AU1
W6H24WWMMl
24N80AU1
igbt to247
s9011
IXGH24N60AU1S
ixgh24N60
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32N60BU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C
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OCR Scan
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32N60BU1
32N60BU1S
O-247
B2-77
B2-78
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PDF
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Untitled
Abstract: No abstract text available
Text: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25
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35N120AU1
to150
O-264AA
JEDECTO-264AA
35N120AU1
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smd diode 819
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C
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OCR Scan
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IXGH32N60AU1
IXGH32N60AU1S
O-247
32N60AU1S)
IXGH32N60AU1
IXQH32N60AU1S
XGH32N60AU1
smd diode 819
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G20N60
Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1S
IXGH24N60AU1
G20N60
IXGH24N60AU1S
IXGH24N60AU1
G24N60
IXYS IXGH24N60AU1 TO-247
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32N50
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C
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32N50BU1
32N50BU1S
O-247
32N50BU1S)
32N90BU1
32NS0BU1S
B2-22
32N50
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IXGH32N60AU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90
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32N60AU1
32N60AU1S
4b6b22b
IXGH32N60AU1
IXGH32N60AU1S
4bflb22b
0003bQb
IXGH32N60AU1
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C
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OCR Scan
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IXGH30N60BD1
150PC
15CFC;
O-247
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Untitled
Abstract: No abstract text available
Text: nixYS HiPerFAST IGBT with Diode IXGH 32N50BU1 V CES ^C25 V CE sat t rfi Symbol Test Conditions VCES VCGR T, =25°Cto150°C 500 V Tj = 25eC to 150° C; RGE= 1 MQ 500 V VGES VGEM Continuous 120 V Transient ¿30 V ^C25 Tc = 25° C ^C90 Tc =90° C ^CM Tc = 25° C, 1 ms
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OCR Scan
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32N50BU1
Cto150
O-247
32NS0BU1
B2-47
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PDF
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Untitled
Abstract: No abstract text available
Text: P1XYS HiPerFAST IGBT with Diode IXGK 50N60AU1 v CES ^C25 v ¥ CE sat tfi Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V v COR v GES T, = 25°C to 150°C; RGE = 1 MQ 600 V Continuous ±20 V vyoem T ransient ±30 V ^C25 Tc = 25°C, limited by leads
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OCR Scan
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50N60AU1
O-264
IXGK56N60AU1
B2-97
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PDF
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MIXA81WB1200TEH
Abstract: No abstract text available
Text: MIXA81WB1200TEH tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = 290 A I C25 90 A I C25 = I FSM = 1200 A VCE sat = = 120 A 1.8 V VCE(sat) = 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
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MIXA81WB1200TEH
60747and
MIXA81WB1200TEH
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 30-12 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter V RRM = 1600V *FAVM - 25 A U = 370 A VCES = 1200 V V CES = 1200 V 'C25 =18 A VCE(Sat,= 2.6 V 'C25 = 31 A V CE,Sat,= 2.2 V Features Input Rectifier Bridge D8 - D13 Symbol
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Untitled
Abstract: No abstract text available
Text: IXGH 38N60U1 Ultra-Low VCE sat IGBT with Diode Symbol ^C25 v Maximum Ratings Test Conditions VCES ^ 600 V VCGB Td = 25°C to 150°C; RGE = 1 M il 600 V VGES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A 152 A ' cm = 25°C to 150°C
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OCR Scan
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38N60U1
O-247
B2-85
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PDF
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Untitled
Abstract: No abstract text available
Text: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC
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MIXA60WH1200TEH
60747and
20111111b
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Untitled
Abstract: No abstract text available
Text: MIXA20WB1200TMI tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I FSM = 70 A I C25 = 270 A VCE sat = = 28 A 1.8 V VCE(sat) = 28 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
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MIXA20WB1200TMI
60747and
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 35-06 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter VRRM = 1200V *FAVM - 25 A lC QM = 370 A FSM VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) VCES = 600 V 'C25 = 38 A Vnc, H= 2.1 V CE(sat) Features Input Rectifier Bridge D8 - D13
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PDF
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 6-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1200V L.,. = 11 A FAVM U = 250 A VCES = 600 V VCES = 600 V 'C25 =7A VCE(Sat,= 2.0 V 'C25 =7A VCE,Sat,= 2.0 V
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IXSN35N120
Abstract: No abstract text available
Text: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings
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35N120AU1
OT-227
IXSN35N120AU1
4bflb22b
IXSN35N120
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IC2560
Abstract: thyristor module 700a NTC-10 ohm MIXA60WH1200TEH
Text: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC
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MIXA60WH1200TEH
60747and
20111111b
IC2560
thyristor module 700a
NTC-10 ohm
MIXA60WH1200TEH
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PDF
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Untitled
Abstract: No abstract text available
Text: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1200 V VCES = 600 V VCES = 650 V I DAV = 119 A I C25 I FSM = 360 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number
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MIXA50WB600TED
60747and
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Untitled
Abstract: No abstract text available
Text: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 600 V VCES = 650 V I DAV = 139 A I C25 I FSM = 550 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number
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MIXA50WB600TED
60747and
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D65VML
Abstract: D65CEK1C5A C25DRJ350 S811V XTMC6A01 0A95 diode C25DND325 XTMF9A00
Text: Motor Control and Protection Contactors 2.1 Contactors Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Compact Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . . . . 50 mm C25 Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . .
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V9-T2-15
V9-T2-17
V9-T2-19
V9-T2-22
V9-T2-23
V9-T2-26
V9-T2-32
V9-T2-36
V9-T2-37
V9-T2-41
D65VML
D65CEK1C5A
C25DRJ350
S811V
XTMC6A01
0A95 diode
C25DND325
XTMF9A00
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PDF
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40N30BD1
Abstract: No abstract text available
Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o
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IXGH40N30BD1
IXGH40N30BD1S
O-247SMD
40N30BD1S)
O-247
360VTj
40N30BD1
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PDF
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 4-12 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 25 24 D 2Ï Preliminary data Rectifier Brake VRRM = 1600V L.,. = 11 A FAVM U = 250 A VCES Inverter = 1200 V ^C25 = 3.6 A VC E (sat) = 2.8 V VCES = 1200 V 'C25 = 3 - 6 A
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