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    C216 001 Search Results

    C216 001 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    10155500-C216KLF Amphenol Communications Solutions Minitek MicroSpaceXS™ 1.27mm Crimp-to-Wire Connector Platform, wire-to-board, Header Right angle, 16 Position, STG, Top Latch, Tin (postplated); C Coding

    (For product qualification latest status, please submit Product Enquiry)    		 Visit Amphenol Communications Solutions
    10155502-C216KLF Amphenol Communications Solutions Minitek MicroSpaceXS™ 1.27mm Crimp-to-Wire Connector Platform, wire-to-board, Header Vertical, 16 Position, STG, Top Latch, Tin (postplated); C Coding

    (For product qualification latest status, please submit Product Enquiry)    		 Visit Amphenol Communications Solutions
    10155552-C216KLF Amphenol Communications Solutions Minitek MicroSpaceXS™ 1.27mm Crimp-to-Wire Connector Platform, wire-to-board, Header Header Vertical, Tin (postplated) Visit Amphenol Communications Solutions
    10155550-C216KLF Amphenol Communications Solutions Minitek MicroSpaceXS™ 1.27mm Crimp-to-Wire Connector Platform, wire-to-board, Header Right angle, 16 position, Tin (postplated) Visit Amphenol Communications Solutions
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    C216 001 Price and Stock

    TDK Corporation B84299C2160B001

    Power Line Filters FILTER 2X16A 250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics B84299C2160B001
    • 1 $1579.01
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    TDK Corporation B84299C2160E001

    Power Line Filters FILTER 4X16A 440/250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics B84299C2160E001
    • 1 $2713.03
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    Smiths Interconnect RTR50J-216 RTR50C-216 RTRJ0-216

    Extraction, Removal & Insertion Tools RECEPTACLE INSERTION TOOL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RTR50J-216 RTR50C-216 RTRJ0-216
    • 1 $213.88
    • 10 $200.08
    • 100 $193.19
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    Harwin G125-FC21605L0-0150L

    Rectangular Cable Assemblies 1.25MM F/L CA 2X8 150MM 28AWG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics G125-FC21605L0-0150L
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    • 100 $33.34
    • 1000 $31.5
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    ITT Interconnect Solutions BKAC2-163-30001-F0

    Rack & Panel Connectors
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    Mouser Electronics BKAC2-163-30001-F0
    • 1 -
    • 10 $496.42
    • 100 $496.42
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    Find more C216 001 price and stock on Findchips.com

    C216 001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Emitter

    Abstract: logitech
    Text: IR Emitter and Detector Product Data Sheet LTE-C216-P Spec No.: DS50-2012-0016 Effective Date: 08/17/2012 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.


    Original     		PDF LTE-C216-P DS50-2012-0016 BNS-OD-FC001/A4 BNS-OD-C131/A4 BNS-OD-C131/A Emitter logitech

    intel g41 motherboard circuit block diagram downs

    Abstract: MS146818B MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM xHCI Specification AK33 AV schematic circuit for sata ssd disk JESD21-C 12120P intel b75 DIN 74 - Bm5
    Text: Intel 7 Series / C216 Chipset Family Platform Controller Hub PCH Datasheet June 2012 Order Number: 326776-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS


    Original     		PDF

    TRANSISTOR tl131

    Abstract: TL235 TL231 TL137 tl117 TL130 tl134 Tl232 C804 tl127
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6 84MHz TRANSISTOR tl131 TL235 TL231 TL137 tl117 TL130 tl134 Tl232 C804 tl127

    PCC104bct-nd

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6 84MHz PCC104bct-nd

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    TL239

    Abstract: TL140 TL230 Tl141 TL249 TL142 TL235 TL-141 tl144 tl241
    Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208SV PTFB213208SV 320-watt H-34275-6/2 TL239 TL140 TL230 Tl141 TL249 TL142 TL235 TL-141 tl144 tl241

    4871I

    Abstract: No abstract text available
    Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208SV PTFB213208SV 320-watt H-37275G-6/2 4871I

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    Untitled

    Abstract: No abstract text available
    Text: PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. Its asymmetric and dual-path


    Original     		PDF PXAC201602FC PXAC201602FC 140-watt H-37248-4 10ubstances.

    Untitled

    Abstract: No abstract text available
    Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for


    Original     		PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4 pxac201202fc-gr1a

    Untitled

    Abstract: No abstract text available
    Text: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz


    Original     		PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4

    Untitled

    Abstract: No abstract text available
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PDF PTFB093608FV PTFB093608FV H-34275G-6/2

    TL250

    Abstract: TL239
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PDF PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239

    Untitled

    Abstract: No abstract text available
    Text: PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,


    Original     		PDF PXAC261212FC PXAC261212FC 120-watt

    J499

    Abstract: No abstract text available
    Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for


    Original     		PDF PXAC201202FC PXAC201202FC 120-watt H-37248-4 28ances. J499

    J103 transistor

    Abstract: transistor c223
    Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB072707FH PTFB072707FH b072707fh-gr1 J103 transistor transistor c223

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131

    atc200b104kw50

    Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
    Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147

    TL172

    Abstract: TL170
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170

    mn5134

    Abstract: C217 c216 001
    Text: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA M O C 215 M O C 216 M O C 217 S m a ll O u tlin e O p to is o la to r s Transistor Output T h e se devices co n sist of a galliu m arse n id e infrared em itting d iod e opticaily co up led to a m on olith ic silicon pho to tran sistor detector, in a surface m ountable, sm a ll outline,


    OCR Scan     		PDF

    ESC Electronics

    Abstract: ESC B104 a016 A022 SGE B103 B1-34 A008 b126 c216 c216 001
    Text: E S C E L E C T R O N I C S CORP 30 3 7 2 5 7 00 0 0 4 Û Û Ö2T « E C E SGE D LOW PROFILE □IP DELAY LINES IO T A PS •14 PIN PACKAGE fi ii 7 I T T-H 1-Ì3 SERIES MIL-23 7 6 5 8 9 10 4 3 2 1 11 12 13 -.750 k030 -.010 14 ,3 0 0 _ MAX. .187 .065 :.010 .020


    OCR Scan     		PDF IL-23 070MAX. DIP16 ESC Electronics ESC B104 a016 A022 SGE B103 B1-34 A008 b126 c216 c216 001